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        Three-terminal nonvolatile memory photodetectors based on rationally engineered heterostructured tin zinc oxide nanowires

        Zhang WenXin,Li Hao,Cong Haofei,Zhou Ruifu,Qin Yuanbin,Xu Peilong,Liu Xuhai,Wang Fengyun 한국물리학회 2023 Current Applied Physics Vol.48 No.-

        One-dimensional wide band-gap metal oxide semiconductors demonstrate enormous potential in high-performance ultraviolet photodetectors. Here, via tuned zinc oxide (ZnO) concentration ratio and heterojunction structure as well as decent VTH value, we electrospun tin zinc oxide (SnZnOX) nanowires for photoelectronic conversion function. The constructed optimized photodetectors based on Sn8Zn2OX nanowires can exhibit a remarkable detectivity of 1.77 × 1016 Jones, excellent responsivity of 2.23 × 103 A/W and relative high sensitivity over 104. In addition to the excellent photodetection performance, Sn8Zn2OX nanowire devices exhibit nonvolatile memory effect, which can maintain the light-induced low resistance state at 5 V without light. Moreover, a voltage of 30 V was applied to Sn8Zn2OX nanowires devices to realize light-writing state switching to bias-erasing state, and the device could come back to their initial high resistance state. These results indicate SnZnOX nanowires devices possess a tremendous potential in the circuit design of the artificial visual system.

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        Double hysteresis loops induced by Mn doping in Pb0.99Nb0.02(Zr0.95Ti0.05)0.98O3 ferroelectric ceramics

        Meng Jiang,Xuhai Li,Jiliang Zhu,Xiaohong Zhu,Wei Shi,Lihua Li,Dingquan Xiao,Jianguo Zhu 한국물리학회 2010 Current Applied Physics Vol.10 No.2

        Pb0.99Nb0.02(Zr0.95Ti0.05)0.98O3 (PNZT95/5) ceramics with 1 mol% and without Mn doping were prepared via conventional solid state reaction process. X-ray diffraction patterns show that the PNZT95/5 and Mn-doped PNZT95/5 (PNZTM95/5) ceramics, with composition near the boundary of the ferroelectric phase (FE)/antiferroelectric phase (AFE), have a rhombohedral perovskite structure. The ferroelectric behavior of PNZT95/5 ceramics is strongly affected by Mn doping. Without any aging process the PNZTM95/5 ceramics possess double hysteresis loops (P–E loops), whereas the PNZT95/5 ceramics possess normal single hysteresis loops. Due to the defect dipoles formed by effectively negatively charged Mn3+ dopants and positively charged O2- vacancies, the PNZTM95/5 ceramics exhibit the double P–E loops. The defect dipole effect has been proved by investigating the P–E loops under different external fields. As a result, the PNZTM95/5 ceramics become ‘‘hardened”, exhibiting a high mechanical quality factor (1300).

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