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L. B. Zhao,N. Lin,X. Q. Han,C. Ma,Z. Y. Wang,Y. H. He 대한금속·재료학회 2021 METALS AND MATERIALS International Vol.27 No.8
The efects of tungsten carbide addition on the microstructure, mechanical properties and corrosion resistance of Ti(C,N)-based cermets prepared by the sinter-HIP method are investigated through scanning electron microscope, X-ray difraction,electron back scattered difraction, mechanical test and electrochemical method. The results show that the appropriate WCaddition has an important infuence on promoting the formation of core-rim microstructure of cermet, increasing the wettability of ceramic phase and binder phase, and improving the mechanical properties. Ti(C,N)-based cermet with 5 wt% WCaddition has the highest hardness of 92.4 HRA and excellent wear resistance. However, excessive WC addition causes theappearance of slight white core phase containing plenty of W and Ti element in microstructure, which increases the fracturetoughness, and reduces the hardness and wear resistance of cermet. Additionally, the electrochemical result shows that theaddition of 5 wt% WC in cermet has the optimal corrosion resistance in 1 mol/L hydrochloric acid solution.
Structural studies of Mn+ implanted GaN film
Y. Shi,L. Lin,C. Z. Jiang,X. J. Fan 한국진공학회(ASCT) 2003 Applied Science and Convergence Technology Vol.12 No.S1
Wurtzite GaN films are grown by low-pressure MOCVD on (0001)-plane sapphire substrates. The GaN films have a total thickness of 4 ㎛ with a surface Mg-doped p-type layer, which has a thickness of 0.5 ㎛. 90k eV Mn^+ ions are implanted into the GaN films at room temperature with doses ranging from 1×10^(15) to 1×10^(16) ㎝-². After an annealing step at 770℃ in flowing N₂, the structural characteristics of the Mn^+ implanted GaN films are studied by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM). The structural and morphological changes brought about by Mn^+ implantation and annealing are characterized.
Structural studies of $Mn^+$ implanted GaN film
Shi, Y.,Lin, L.,Jiang, C.Z.,Fan, X.J. The Korean Vacuum Society 2003 Applied Science and Convergence Technology Vol.12 No.1
Wurtzite GaN films are grown by low-pressure MOCVD on (0001)-plane sapphire substrates. The GaN films have a total thickness of 4 $\mu$m with a surface Mg-doped p-type layer, which has a thickness of 0.5 $\mu$m. 90k eV $Mn^{+}$ ions are implanted into the GaN films at room temperature with doses ranging from $1 \times10^{15}$ to $1 \times 10^{16}\textrm{cm}^{-2}$. After an annealing step at $770^{\circ}C$ in flowing $N_2$, the structural characteristics of the $Mn^{+}$ implanted GaN films are studied by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM). The structural and morphological changes brought about by $Mn^{+}$ implantation and annealing are characterized.
Magnetic Characteristics and Structure Studies of Mn-Implanted p-type GaN Films
Y. Shi,C. Z. Jiang,D. J. Fu,L. Lin,강태원,X. J. Fan 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
Wurtzite GaN ¯lms are grown by low-pressure MOCVD on (0001)-plane sapphire substrates. The GaN ¯lms have a total thickness of 4 ¹m with a surface Mg-doped p-type layer which has a thickness of 0.5 ¹m. 90-keV Mn+ ions are implanted into the GaN ¯lms at room temperature with doses ranging from 1 £ 1015 cm¡2 to 5 £ 1016 cm¡2. After an annealing step at about 800 ±C in °owing N2, the magnetism of the Mn-implanted GaN ¯lms is investigated by superconducting-quantum-interference device (SQUID). Despite the diamagnetic background of the undoped sample, the Mn-implanted GaN ¯lms show paramagnetism with dose of 1£1015 cm¡2 and ferromagnetism with a dose of 5 £ 1015 cm¡2 » 5 £ 1016 cm¡2. Combined with the structural characteristics given by X-ray diraction (XRD) and scanning electron microscopy (SEM), the magnetism of the Mn-implanted p-type GaN ¯lms is discussed.
L. Zhang,J. Li,X.W. Zhang,D.B. Yu,H.P. Lin Khizar-ul-Haq,X.Y. Jiang,Z.L. Zhang 한국물리학회 2010 Current Applied Physics Vol.10 No.5
Low-voltage-drive ZnO thin-film transistors (TFTs) with room-temperature radio frequency magnetron sputtering SiO2 as the gate insulator were fabricated successfully on the glass substrate. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 4.2 V, a field effect mobility of 11.2 ㎠/V s, an on/off ratio of 3.1 × 106 and a subthreshold swing of 0.61 V/dec. The drain current can reach to 1 mA while the gate voltage is only of 12 V and drain voltage of 8 V. The C–V characteristics of a MOS capacitor with the structure of ITO/SiO2/ZnO/Al was investigated. The carrier concentration ND in the ZnO active layer was determined, the calculated ND is 1.81 × 1016 cm−3, which is the typical value of undoped ZnO film used as the channel layer for ZnO-TFT devices. The experiment results show that SiO2 film is a promising insulator for the low voltage and high drive capability oxide TFTs.
SURFACE PROCESSING OF TOOLS AND COMPONENTS BY MEVVA SOURCE ION IMPLANTATION
Lin, W.L.,Sang, J.M.,Ding, X.J.,Yuan, X.M.,Xu, J.,Zhang, H.X.,Zhang, X.J. The Korean Vacuum Society 1995 Applied Science and Convergence Technology Vol.4 No.s2
Direct implantation of metallic ion species has been employed in surface processing of industrial components and tools with very encouraging improvements in recent years. In spite of high technicla effectiveness, this new surface processing technique has not been extensively accepted by industries mainly because of high cost(capital and operating) compared with other competitive surface processing techniques. High current and large implantation area with eliminating the mass analyzer and the beam-scanning unit make metal vapor vacuum are(MEVVA)source ion implantation versatile, simple and cheap to operate and well suited to commercial surface processing. In this paper, the recent development of MEVVA source ion implantation technique ar Beijing Normal University has been reviewed and the results of production trials of several industrial components and tools implanted by MEVVA source ion implantation have been presented and discussed.
Zhang, L.,Li, B.B.,Li, H.Z.,Meng, X.,Lin, X.,Jiang, Y.Y.,Ahn, J.S.,Cui, L. Elsevier 2017 Fitoterapia Vol.121 No.-
<P>Four new compounds, erythro-7'E-4-hydroxy-3,3'-dimethoxy-8,5'-oxyneoligna-7'-ene-7,9-dio1-9'-al (1), (7S,8S)4-hydroxy-3,1',3'-trimethoxy-4',7-epoxy-8,5'-neolign-9-ol (5), (75,85,7'E)-5-hydroxy-3,3'-dimethoxy-4',7-epoxy8,5'-neolign-7'-ene-9,9'-diol (6) and (75,85,7'E)-5-hydroxy-3,3',9'-trimethoxy-4'-7-epoxy-8,5'-neolign-7'-ene-9ol (7). Along with four known compounds (2-4, 8) were isolated from the EtOAc-soluble extract of Eleutherococcus senticosus. Their structures were elucidated on the basis of spectroscopic and physicochemical analyses. All the compounds were evaluated for in vitro inhibitory activity against PTP1B, VHR and PPl. Among them, compounds 1-4 and 6-8 were found to exhibit selective inhibitory activity on PTP1B with IC50 values ranging from 17.2 1.6 to 32.7 1.2 M.</P>