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James A. Smith,Casey J. Jesse,William A. Hanson,Clark L. Scott,David L. Cottle Korean Nuclear Society 2023 Nuclear Engineering and Technology Vol.55 No.6
One of the salient nuclear fuel performance parameters for new fuel types under development is changes in fuel thickness. To test the new commercially fabricated U-10Mo monolithic plate-type fuel, an irradiation experiment was designed that consisted of multiple mini-plate capsules distributed within the Advanced Test Reactor (ATR) core, the mini-plate 1 (MP-1) experiment. Each capsule contains eight mini-plates that were either fueled or "dummy" plates. Fuel thickness changes within a fuel assembly can be characterized by measuring the gaps between the plates ultrasonically. The channel gap probe (CGP) system is designed to measure the gaps between the plates and will provide information that supports qualification of U-10Mo monolithic fuel. This study will discuss the design and the results from the use of a custom-designed CGP system for characterizing the gaps between mini-plates within the MP-1 capsules. To ensure accurate and repeatable data, acceptance and calibration procedures have been developed. Unfortunately, there is no "gold" standard measurement to compare to CGP measurements. An effort was made to use plate thickness obtained from post-irradiation measurements to derive channel gap estimates for comparison with the CGP characterization.
Bailey, Kathryn A.,Smith, Allan H.,Tokar, Erik J.,Graziano, Joseph H.,Kim, Kyoung-Woong,Navasumrit, Panida,Ruchirawat, Mathuros,Thiantanawat, Apinya,Suk, William A.,Fry, Rebecca C. U.S. Dept. of Health, Education, and Welfare, Publ 2016 Environmental health perspectives Vol.124 No.2
<P><B>Background</B></P><P>Millions of individuals worldwide, particularly those living in rural and developing areas, are exposed to harmful levels of inorganic arsenic (iAs) in their drinking water. Inorganic As exposure during key developmental periods is associated with a variety of adverse health effects, including those that are evident in adulthood. There is considerable interest in identifying the molecular mechanisms that relate early-life iAs exposure to the development of these latent diseases, particularly in relationship to cancer.</P><P><B>Objectives</B></P><P>This work summarizes research on the molecular mechanisms that underlie the increased risk of cancer development in adulthood that is associated with early-life iAs exposure.</P><P><B>Discussion</B></P><P>Epigenetic reprogramming that imparts functional changes in gene expression, the development of cancer stem cells, and immunomodulation are plausible underlying mechanisms by which early-life iAs exposure elicits latent carcinogenic effects.</P><P><B>Conclusions</B></P><P>Evidence is mounting that relates early-life iAs exposure and cancer development later in life. Future research should include animal studies that address mechanistic hypotheses and studies of human populations that integrate early-life exposure, molecular alterations, and latent disease outcomes.</P><P><B>Citation</B></P><P>Bailey KA, Smith AH, Tokar EJ, Graziano JH, Kim KW, Navasumrit P, Ruchirawat M, Thiantanawat A, Suk WA, Fry RC. 2016. Mechanisms underlying latent disease risk associated with early-life arsenic exposure: current research trends and scientific gaps. Environ Health Perspect 124:170–175; http://dx.doi.org/10.1289/ehp.1409360</P>
Ha, Jung-Hye,Eo, Yumi,Grishaev, Alexander,Guo, Min,Smith, Jacqueline A. I.,Sintim, Herman O.,Kim, Eun-Hee,Cheong, Hae-Kap,Bentley, William E.,Ryu, Kyoung-Seok American Chemical Society 2013 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY - Vol.135 No.41
<P>Quorum sensing (QS) is a cell-to-cell communication system responsible for a variety of bacterial phenotypes including virulence and biofilm formation. QS is mediated by small molecules, autoinducers (AIs), including AI-2 that is secreted by both Gram-positive and -negative microbes. LsrR is a key transcriptional regulator that governs the varied downstream processes by perceiving AI-2 signal, but its activation via autoinducer-binding remains poorly understood. Here, we provide detailed regulatory mechanism of LsrR from the crystal structures in complexes with the native signal (phospho-AI-2, D5P) and two quorum quenching antagonists (ribose-5-phosphate, R5P; phospho-isobutyl-AI-2, D8P). Interestingly, the bound D5P and D8P molecules are not the diketone forms but rather hydrated, and the hydrated moiety forms important H-bonds with the carboxylate of D243. The D5P-binding flipped out F124 of the binding pocket, and resulted in the disruption of the dimeric interface-1 by unfolding the α7 segment. However, the same movement of F124 by the D8P′-binding did not cause the unfolding of the α7 segment. Although the LsrR-binding affinity of R5P (<I>K</I><SUB>d</SUB>, ∼1 mM) is much lower than that of D5P and D8P (∼2.0 and ∼0.5 μM), the α-anomeric R5P molecule fits into the binding pocket without any structural perturbation, and thus stabilizes the LsrR tetramer. The binding of D5P, not D8P and R5P, disrupted the tetrameric structure and thus is able to activate LsrR. The detailed structural and mechanistic insights from this study could be useful for facilitating design of new antivirulence and antibiofilm agents based on LsrR.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jacsat/2013/jacsat.2013.135.issue-41/ja407068v/production/images/medium/ja-2013-07068v_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/ja407068v'>ACS Electronic Supporting Info</A></P>
Implant Anneal Process for Activating Ion Implanted Regions in SiC Epitaxial Layers
Saddow, S.E.,Kumer, V.,Isaacs-Smith, T.,Williams, J.,Hsieh, A.J.,Graves, M.,Wolan, J.T. The Korean Institute of Electrical and Electronic 2000 Transactions on Electrical and Electronic Material Vol.1 No.4
The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).