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Ippen, Christian,Greco, Tonino,Wedel, Armin The Korean Infomation Display Society 2012 Journal of information display Vol.13 No.2
Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.
Christian Ippen,Tonino Greco,Armin Wedel 한국정보디스플레이학회 2012 Journal of information display Vol.13 No.2
Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in lightemitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50–70% along with peak widths of 45–50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.
장일완,김지완,박창준,Christian Ippen,Tonino Greco,오민석,이정노,김원근,Armin Wedel,한철종,박성규 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.6
The present work shows the effect of ethanolamine surface treatment on inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol-gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). First, ethanolamine was treated as a surface modifier on top of the ZnO electron transport layer. The optical performance of the QDLED device was improved by the ethanolamine surface treatment. Second, low temperature annealing (<200°C) was performed on the ZnO sol-gel electron transport layer, followed by an investigation of the effect of the ZnO annealing temperature. The efficiency of the inverted QD-LEDs was significantly enhanced (more than 3-fold) by optimization of the ZnO annealing temperature.
Ippen, C.,Greco, T.,Kim, Y.,Kim, J.,Oh, M.S.,Han, C.J.,Wedel, A. Elsevier Science 2014 ORGANIC ELECTRONICS Vol.15 No.1
Quantum dots are a highly attractive class of materials for the use in light-emitting devices, since they allow high color purity, facile tunability and solution-processing methods. Here, zinc selenide QDs are investigated for their suitability as emissive material in cadmium-free blue QD-LEDs. By adjusting the stoichiometry in the synthesis the emission wavelength can be tuned in the range of 390-435nm. For the assembly of the QD-LED, the device setup was adjusted to the low-lying ZnSe valence band energy by choosing a suitable hole-transport material. A first promising QD-LED result is achieved showing the characteristic narrow QD emission peak with a luminance of 25cd/m<SUP>2</SUP>.
Electrical Aging Effect of ZnS based Quantum Dots for White Light-Emitting Diodes
Yohan Kim,Christian Ippen,Tonino Greco,Ilwan Jang,박성규,Min Suk Oh,한철종,이정노,Armin Wedel,김지완 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.2
The present work reports cadmium-free colloidal ZnS:Al quantum dot (QD) based white quantum dot lightemitting diodes (QD-LEDs). The device was fabricated with a structure of ITO/PEDOT:PSS/ PVK/QDs/TPBi/ LiF/Al using synthesized ZnS:Al QDs which has 393 nm of peak wavelength and sub peaks in visible wavelength. White emission with high color rending index (CRI) was achieved by the combination of blue emission from PVK and ZnS:Al QDs, electroplex emission at the interface between PVK and ZnS:Al QDs, and Al traps/ defects emission, which are controlled by electrical aging effect. The characteristic of our device shows the potential for spectrum tunable and Cd-free white QD-LEDs in the near future.
Semitransparent quantum dot light-emitting diodes by cadmium-free colloidal quantum dots.
Kim, Yohan,Ippen, Christian,Greco, Tonino,Oh, Min Suk,Chul, Jong Han,Lee, Jeongno,Wedel, Armin,Kim, Jiwan American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.11
<P>The InP/ZnSe/ZnS multishell colloidal quantum dots (QDs) were prepared by convenient heating-up method for an emission layer of semitransparent quantum dot light-emitting diodes (QD-LEDs). The synthesized InP/ZnSe/ZnS multishell QDs exhibited an emission peak at 545 nm for clear green color with a full-width at half-maximum (FWHM) of 50 nm, and photoluminescent (PL) quantum yield (QY) of 45%. The multishell on the indium phosphide (InP) core helped increasing QY and stability by reducing interfacial defects. Using a Ca/Ag cathode, the whole QD-LEDs were semitransparent throughout the visible wavelengths. The maximum brightness and currernt efficiency of semitransparent QD-LEDs reached 587 cd/m2 and 1.52 cd/A by controlling the thickness of Ca/Ag cathode, which is comparable to the device with opaque LiF/Al cathode (1444 cd/m2 and 1.98 cd/A). The performance of our semitransparent and eco-friendly device is not matched with traditional cadmium (Cd) based QD-LEDs yet, but it shows the great potential for various window-type information displays.</P>