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Chen Liang,Liu Yuting,Wang Zheyu,Zhang Leiyang,Xu Yi,Li Yinan,Zhang Lan,Wang Guiming,Yang Shuofei,Xue Guanhua 생화학분자생물학회 2023 Experimental and molecular medicine Vol.55 No.-
Neutrophil extracellular traps (NETs) play an important role in abdominal aortic aneurysm (AAA) formation; however, the underlying molecular mechanisms remain unclear. Mesenchymal stem cell-derived extracellular vesicles (MSC-EVs) may exert therapeutic effects on AAA through their immunomodulatory and regenerative abilities. This study aimed to examine the role and mechanism of MSC-EVs in regulating the development of NET-mediated AAA. Excessive release of NETs was observed in patients with AAA, and the levels of NET components were associated with the clinical outcomes of the patients. Datasets from the Gene Expression Omnibus database were analyzed and revealed that the PI3K/AKT pathway and ferroptosis were strongly associated with NETosis during AAA formation. Further experiments verified that NETs promoted AAA formation by inducing ferroptosis in smooth muscle cells (SMCs) by inhibiting the PI3K/AKT pathway. The PI3K agonist 740 Y-P, the ferroptosis inhibitor ferrostatin-1, and Padi4 deficiency significantly prevented AAA formation. MSC-EVs attenuated AAA formation by reducing NET release in an angiotensin II-induced AAA mouse model. In vitro experiments revealed that MSC-EVs reduced the release of NETs by shifting NETosis to apoptosis. Our study indicates an important role for NET-induced SMC ferroptosis in AAA formation and provides several potential targets for AAA treatment
Fast Wide-bandgap Device Overcurrent Protection with Direct Current Measurement
Wen Zhang,Fred Wang,Zheyu Zhang,Bernhard Holzinger 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
A fast and reliable overcurrent protection scheme is crucial for the converter reliability. It is also critical for double pulse test stations where newer devices or even engineering samples are tested, and device failures can be costly. A fast overcurrent protection scheme using the direct current measurement in the double pulse test is demonstrated and 7.55 ns fault response delay time is achieved. The total fault clearing time is determined by the fault signal propagation and device switching speed. Around 100 ns and 60 ns fault clearing time is achieved for SiC and GaN devices, respectively. The much faster protection can potentially simplify the gate driver design and reduce the energy rating of the coaxial shunt resistor. Since the overcurrent detection is directly attached to the current measurement, its impact on the measurement bandwidth is also discussed.