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Front Surface Grid Design for High Efficiency Solar Cells
Gangopadhyay Utpal,Kim, Kyung-Hae,Basu Prabir Kanti,Dhungel Suresh Kumar,Jung, Sung-Wook,Yia, Jun-Sin The Korean Institute of Electrical and Electronic 2005 Transactions on Electrical and Electronic Material Vol.6 No.2
Standard crystalline solar cells are generally fabricated with the front grid pattern of silver paste contact. We have reported a detailed theoretical analysis of the proposed segmented cross grid line pattern in this paper. This work was carried out for the optimization of spacing and width of grid finger, main busbar and sub-busbar. The overall electrical and optical losses due to front contact were brought down to $10\%$ or even less as compared to the usual loss of $15\%$ or more in the conventional screen printed silver paste technology by choosing proper grid pattern and optimizing the grid parameters. The total normalized power loss for segmented mesh grid with plated metal contact was also observed and the total power loss could be brought down to $10.04\%$ unlike $11.57\%$ in the case of continuous grid and plated contact. This paper is able to outline the limitations of conventional screen printed contact.
Utpal Gangopadhyay,이준신,김경해,Suresh Kumar Dhungel 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.6
Non-uniformity in the sheet resistance and difficulty in removing the spin glass and othercontaminants on wafer surfaces are two major problems confronted after spin-on-doping (SOD). This paper reports a surface treatment process as a possible solution to key problems. The wettability of the silicon surface was enhanced before SOD by maintaining the hydrophilic nature of the surface with a native oxide layer on it, and a novel treatment with hot hydrochloric acid (HCl) was employed as an intermediate step to remove the contaminants easily. Monocrystalline silicon solar cells were fabricated on a large area (103 mm × 103 mm) by using the approach of this study and employing spin-on doping and IR lamp furnace annealing. Uniform sheet resistance, easy removal of surface contaminants after SOD, better performance parameters, and low leakage current were the results of the surface treatment approach of this study. Monocrystalline silicon solar cells with conversion efficiencies of 11.9 % and 13.1 % were fabricated on large area monocrystalline silicon wafers with and without a PECVD silicon-nitride antireflection coating.
Front Surface Grid Design for High Efficiency Solar Cells
Utpal Gangopadhyay,김경해,정성욱,Prabir Kanti Basu,Suresh Kumar Dhungel,Swapan Kumar Dutta,Hiranmoy Saha,이준신 한국전기전자재료학회 2005 Transactions on Electrical and Electronic Material Vol.6 No.2
Standard crystalline solar cells are generally fabricated with the front grid pattern of silver paste contact. We have reported a detailed theoretical analysis of the proposed segmented cross grid line pattern in this paper. This work was carried out for the optimization of spacing and width of grid finger, main busbar and sub-busbar. The overall electrical and optical losses due to front contact were brought down to 10 % or even less as compared to the usual loss of 15 % or more in the conventional screen printed silver paste technology by choosing proper grid pattern and optimizing the grid parameters. The total normalized power loss for segmented mesh grid with plated metal contact was also observed and the total power loss could be brought down to 10.04 % unlike 11.57 % in the case of continuous grid and plated contact. This paper is able to outline the limitations of conventional screen printed contact.
Sudarshana Banerjee,Bibhutibhushan Show,Avra Kundu,Jhuma Ganguly,Utpal Gangopadhyay,Hiranmay Saha,Nillohit Mukherjee 한국공업화학회 2016 Journal of Industrial and Engineering Chemistry Vol.40 No.-
We report the synthesis of an amino acid viz. N-acetyle cysteine (NAC) assisted silver sulphide (Ag2S)nanoparticles by in situ reduction technique of silver nitrate (AgNO3) with sodium borohydride (NaBH4)in presence of NAC, where NAC acted as the sulphur donor as well as encapsulating agent. The preparednanoparticles were characterized by transmission electron microscopy, scanning electron microscopy,atomic force microscopy, X-ray diffraction technique and dynamic light scattering technique. Anenhancement was noticed in the current–voltage characteristics, with major reduction in reflectancewhen c-SiNx solar cells were coated with such nanoparticles. Broadband enhancement of externalquantum efficiency (EQE) was also observed.
High temperature crystallization of a-Si on a molybdenum substrate
Kim,Do Yong,Ko,Jae kyung,Park,Joong Hyun,Utpal Gangopadhyay,Yi,Junsin 성균관대학교 2003 학술회의지원논문목록집 Vol.2003 No.-
Polycrystalline silicon (poly-Si) is an widely studied material, for use in high quality thin film transistor active layer. High temperature process is not used for glass substrate because of its low softening temperature below 450°C. However, high temperature crystallization has an advantage to get high crystalline volume fraction (X_c). In this paper, the a-Si deposited by hot-wire CVD was crystallized at a temperature between 750℃ to 1050℃ within 2 min as to induce high current over 48A between electrodes. The film grown at a condition of crystallization temperature of 850°C for 2 min exhibits the crystalline volume fraction of 80.9%, the preferential growth of (220) orientation, and the activation energy of 0.22eV. Moreover, high temperature poly-Si using a Mo substrate has special advantage of crystallization such as high crystallinity, simple, low cost and high temperature endurance.
Uttam Manna,이준신,Hiranmoy Saha,Jinsu Yoo,김경해,Manoharan Gowtham,Suresh Kumar Dhungel,Utpal Gangopadhyay 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.2
The absorption loss in the n/Al interface of a p-i-n thin- film solar cell is high due to the higher extinction coefficient of the Al used as a back reflector. The insertion of a thin ZnO layer in the n-a-Si : H/Al interface of a solar cell with Glass/textured SnO2 : F/p-a-SiC : H/buffer layer/i-a-Si : H/na- Si : H/Al structure minimizes the absorption loss as ZnO has a lower extinction coefficient (less than 0.5) at longer wavelengths. In this article, the dependence of various electrical characteristics, such as the resistivity, the carrier concentration, the mobility and the optical transmittance, of ZnO : Al films on the thickness and the impact of the thickness of a ZnO : Al film used as a back reflector on the performance of solar cells are reported. The ZnO:Al films are prepared by using a rf magnetron sputtering system. For a 140-nm-thick ZnO : Al layer, the short-circuit current (Isc) increases by 12.7 % in comparison to that for the pure Al-metal back-reflector case. Isc further increases by 23 % when a 180-nm ZnO : Al layer is used, and the conversion efficiency of the solar cell is around 10.26 % for the 180-nm-thick ZnO : Al. The cell efficiency depends on the film thickness. The crystal quality of the deposited film is improved as the film thickness is increased.