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Seongjae Cho,Shinichi O’uchi,Kazuhiko Endo,Sang Wan Kim,Younghwan Son,In Man Kang,Meishoku Masahara,James S. Harris,Byung-Gook Park 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.4
In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-㎚ node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT) model have been experimentally extracted from the devices of 90-㎚ channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15 ㎚ to suppress GIDL effectively for reliable low standby power (LSTP) operation.
Cho, Seong-Jae,O'uchi, Shinichi,Endo, Kazuhiko,Kim, Sang-Wan,Son, Young-Hwan,Kang, In-Man,Masahara, Meishoku,Harris, James S.Jr,Park, Byung-Gook The Institute of Electronics and Information Engin 2010 Journal of semiconductor technology and science Vol.10 No.4
In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-nm node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT) model have been experimentally extracted from the devices of 90-nm channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15 nm to suppress GIDL effectively for reliable low standby power (LSTP) operation.
조성재,Shinichi O’uchi,Kazuhiko Endo,김상완,Younghwan Son,Meishoku Masahara,James S. Harris, Jr.,박병국,강인만 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.4
In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-nm node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT)model have been experimentally extracted from the devices of 90-nm channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15nm to suppress GIDL effectively for reliable low standby power (LSTP) operation.
CASE REPORT : Four Cases of Successfully Treated Chronic Expanding Soft Tissue Hematoma
( Takamichi Ito ),( Takeshi Nakahara ),( Satoshi Takeuchi ),( Hiroshi Uchi ),( Masakazu Takahara ),( Yoichi Moroi ),( Masutaka Furue ) 대한피부과학회 2014 Annals of Dermatology Vol.26 No.1
Chronic expanding hematoma (CEH) is a rare, slow- developing disease that occurs months to years after trauma or surgery. Most CEH in soft tissue occurs in the thigh or upper extremities and can occur with or without an inducible cause. Ninety-one cases of CEH in soft tissue have been reported previously in the Japanese and English literature but its occurrence on the sole has not been reported. Here, we report four cases of successfully treated CEH, including a case occurring on the sole, and provide a review of the literature. (Ann Dermatol 26(1) 107∼110, 2014)
Takeshi Nakahara,Chikage Mitoma,Akiko Hashimoto-Hachiya,Masakazu Takahara,Gaku Tsuji,Hiroshi Uchi,Xianghong Yan,Junichi Hachisuka,Takahito Chiba,Hitokazu Esaki,Makiko Kido-Nakahara,Masutaka Furue 한국식품영양과학회 2015 Journal of medicinal food Vol.18 No.10
Opuntia ficus-indica (OFI) is a cactus species widely used as an anti-inflammatory, antilipidemic, and hypoglycemic agent. It has been shown that OFI extract (OFIE) inhibits oxidative stress in animal models of diabetes and hepatic disease; however, its antioxidant mechanism remains largely unknown. In this study, we demonstrated that OFIE exhibited potent antioxidant activity through the activation of nuclear factor erythroid 2-related factor 2 (NRF2) and the downstream antioxidant enzyme NAD(P)H:quinone oxidoreductase 1 (NQO1), which inhibited the generation of reactive oxygen species in keratinocytes challenged with tumor necrosis factor α or benzo[α]pyrene. The antioxidant capacity of OFIE was canceled in NRF2 knockdown keratinocytes. OFIE exerted this NRF2-NQO1 upregulation through activation of the aryl hydrocarbon receptor (AHR). Moreover, the ligation of AHR by OFIE upregulated the expression of epidermal barrier proteins: filaggrin and loricrin. OFIE also prevented TH2 cytokine-mediated downregulation of filaggrin and loricrin expression in an AHRdependent manner because it was canceled in AHR knockdown keratinocytes. Antioxidant OFIE is a potent activator of AHRNRF2-NQO1 signaling and may be beneficial in treating barrier-disrupted skin disorders.