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Photocurrent attenuation by a single polar-to-nonpolar point mutation of channelrhodopsin-2
Sugiyama, Yuka,Wang, Hongxia,Hikima, Takuya,Sato, Minami,Kuroda, Jun,Takahashi, Tetsuo,Ishizuka, Toru,Yawo, Hiromu Korean Society of Photoscience 2009 Photochemical & photobiological sciences Vol.8 No.3
Channelrhodopsin-2 (ChR2), one of the algal light-gated cation channel rhodopsins, contains five peculiar glutamic acid residues in the N-terminal region corresponding to the second to third transmembrane helices. Here we made systematic mutations of these polar amino acid residues of ChR2 into nonpolar alanine, and evaluated their photocurrent properties. Amongst them, the photocurrent generated by the E97A mutation, ChR2(E97A), was much smaller than expected from its expression. The ChR2(E97A) photocurrent was similar to wild-type ChR2 in the kinetic profiles, the reversal potential and the dependency to the light power density. Our results suggest that the residue E97 is one of the molecular determinants involved in the ion flux regulation.
A Design Method for Nonlinear Model Predictive Control with a Step-type Input Constraint
Ryuichi Sakata,Shiro Masuda,Takuya Sugiyama,Takao Sato 제어로봇시스템학회 2009 제어로봇시스템학회 국제학술대회 논문집 Vol.2009 No.8
The nonlinear model predictive control needs to solve a two-point boundary-value problem(TP-BVP) at every sample time based on the receding horizon control strategy. However, solving a nonlinear algebraic equation for the TP-BVP requires high computational load, so computing the cotrol law in real-time is a significant issue on the nonlinear model prective control. This paper, the refore, proposes a design method for nonlinear model predictive control with a step-type input constraint. The proposed method searches an optimal control law under a step-type input signal constraint. Hence, the number of unknown parameters in the nonlinear equation can bereduced to the number of inputs. The effectiveness of the proposed method is demonstrated through a numerical simulation.
Taniguchi, Junichi,Pandian, Ganesh N.,Hidaka, Takuya,Hashiya, Kaori,Bando, Toshikazu,Kim, Kyeong Kyu,Sugiyama, Hiroshi Oxford University Press 2017 Nucleic acids research Vol.45 No.16
<P><B>Abstract</B></P><P>Targeted differentiation of human induced pluripotent stem cells (hiPSCs) using only chemicals would have value-added clinical potential in the regeneration of complex cell types including cardiomyocytes. Despite the availability of several chemical inhibitors targeting proteins involved in signaling pathways, no bioactive synthetic DNA-binding inhibitors, targeting key cell fate-controlling genes such as SOX2, are yet available. Here, we demonstrate a novel DNA-based chemical approach to guide the differentiation of hiPSCs using pyrrole–imidazole polyamides (PIPs), which are sequence-selective DNA-binding synthetic molecules. Harnessing knowledge about key transcriptional changes during the induction of cardiomyocyte, we developed a DNA-binding inhibitor termed <B>PIP-S2</B>, targeting the 5′-CTTTGTT-3′ and demonstrated that inhibition of SOX2–DNA interaction by <B>PIP-S2</B> triggers the mesoderm induction in hiPSCs. Genome-wide gene expression analyses revealed that <B>PIP-S2</B> induced mesoderm by targeted alterations in SOX2-associated gene regulatory networks. Also, employment of <B>PIP-S2</B> along with a Wnt/β-catenin inhibitor successfully generated spontaneously contracting cardiomyocytes, validating our concept that DNA-binding inhibitors could drive the directed differentiation of hiPSCs. Because PIPs can be fine-tuned to target specific DNA sequences, our DNA-based approach could be expanded to target and regulate key transcription factors specifically associated with desired cell types.</P>
Katsuyoshi Ando,Mikihiro Fujiya,Yoshiki Nomura,Yuhei Inaba,Yuuya Sugiyama,Takuya Iwama,Masami Ijiri,Keitaro Takahashi,Kazuyuki Tanaka,Aki Sakatani,Nobuhiro Ueno,Shin Kashima,Kentaro Moriichi,Yusuke Mi 대한장연구학회 2018 Intestinal Research Vol.16 No.3
Background/Aims: Venous thromboembolism (VTE) is a major extraintestinal manifestation in inflammatory bowel disease (IBD), regarded as an independent risk factor for VTE according to reports from Western countries. However, the incidence and risk factors of VTE in Asian IBD patients are not fully understood. We aimed to reveal the incidence and risk factors of VTE in Japanese IBD inpatients. Methods: The incidence of VTE in inpatients with IBD (n=340), gastrointestinal cancers (n=557), and other gastrointestinal diseases (n=569) treated at our hospital from 2009 to 2013 was retrospectively investigated. The characteristics and laboratory data of IBD inpatients with and without VTE were compared in univariate and multivariate analyses. Clinical courses of VTE in IBD were surveyed. Results: VTE was detected in 7.1% of IBD inpatients, significantly higher than in gastrointestinal cancer inpatients (2.5%) and inpatients with other gastrointestinal diseases (0.88%). The incidence of VTE in ulcerative colitis (UC) patients (16.7%) was much higher than that in those with Crohn’s disease (3.6%). In the univariate analysis, the risk factors were an older age, central venous catheter, prednisolone, surgery, low serum albumin, high serum C-reactive protein and D-dimer. According to a multivariate analysis, >50 years of age and surgery were the only risk factors. The in-hospital mortality rate of IBD inpatients with VTE was 4.2%. Conclusions: The incidence of VTE with IBD, especially UC, was found to be high compared with other digestive disease, which was almost equivalent to that of Western countries. The efficacy of prophylaxis needs to be investigated in Asian IBD patients.
Lee In-Geun,Ko Dae-Hong,Yun Seung-Won,Kim Jun-Gyu,Jo Hyeon-Bhin,Kim Dae-Hyun,Tsutsumi Takuya,Sugiyama Hiroki,Matsuzaki Hideaki 한국물리학회 2021 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.78 No.6
Herein we describe theoretical and experimental analysis of the source resistance (Rs) components in In0.7Ga0.3As/ In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate. First, we analytically modeled Rs using a three-layer formula, separately modeling the regions of the ohmic contact, the gate-to-source access, and the side-recessed regions. The resistances of the ohmic contact and access regions were analyzed in a distributed-network manner with two different transfer lengths, whereas the resistance associated with the side-recess region near the gate edge was modeled by using a lumped element. To verify the accuracy of the proposed Rs model, we fabricated two different types of transmission-line-method (TLM) test patterns as well as long-channel In0.7Ga0.3As/ In0.52Al0.48As QW HEMTs, and compared their measured and modeled Rs. The modeled Rs was in excellent agreement with the measured Rs from the recessed TLM patterns and the long-channel HEMTs. Since the widths of the ohmic contact to the heavily doped In0.53Ga0.47As capping layer and the gate-to-source access region were typically much greater than corresponding transfer lengths ( L T_cap and L T_barrier ), those distributed networks could be simplified to a lumped-element based one-layer model, revealing that the tunneling resistance ( R barrier ) through the In0.52Al0.48As barrier should be carefully considered to minimize the Rs of InxGa1− xAs QW HEMTs together with S/D contact resistances and LGS.
Yun, Do-Young,Jo, Hyeon-Bhin,Son, Seung-Woo,Baek, Ji-Min,Lee, Jung-Hee,Kim, Tae-Woo,Kim, Dae-Hyun,Tsutsumi, Takuya,Sugiyama, Hiroki,Matsuzaki, Hideaki IEEE 2018 IEEE electron device letters Vol.39 No.12
<P>In this letter, we investigated the impact of the source-to-drain spacing ( <TEX>${L}_{\textsf {SD}}$</TEX>) on the dc and high-frequency characteristics of indium-rich In<SUB>0.8</SUB>Ga<SUB>0.2</SUB>As/In<SUB>0.52</SUB>Al<SUB>0.48</SUB>As high-electron mobility transistors (HEMTs) on a 3-in InP substrate. <TEX>${L}_{g} = \textsf {87}$</TEX> nm HEMTs with different values of <TEX>${L}_{\textsf {SD}}$</TEX> were fabricated ranging from 1.55 to <TEX>$0.8~\mu \text{m}$</TEX>, and their dc and RF responses were measured and analyzed in detail. In order to suppress the increase of the parasitic gate capacitance, we maintained the gate stem height as high as 200 nm in our device fabrication. Both the maximum transconductance (g<SUB>m_max</SUB>) and on-resistance ( <TEX>${R}_{\textsf {ON}}$</TEX>) improved as <TEX>${L}_{\textsf {SD}}$</TEX> scaled down to <TEX>$0.8~\mu \text{m}$</TEX>. At the same time, the high-frequency figures of the merit, such as current-gain cutoff frequency ( <TEX>${f}_{T}$</TEX>) and maximum oscillation frequency ( <TEX>${f}_{\textsf {max}}$</TEX>), increased with the reduction of <TEX>${L}_{\textsf {SD}}$</TEX>. These improvements are attributed to the reduction of series resistances. In particular, the <TEX>${L}_{g} =87$</TEX> nm device with an <TEX>${L}_{\textsf {SD}} = \textsf {0.8} \mu \text{m}$</TEX> exhibited an excellent combination of dc and RF characteristics, such as g<SUB>m_max</SUB> = 2.7 mS/ <TEX>$\mu \text{m}$</TEX>, <TEX>${R}_{\textsf {ON}} = \textsf {318}\,\,\Omega \cdot \mu \text{m}$</TEX>, <TEX>${f}_{T} = \textsf {519}$</TEX> GHz, and <TEX>${f}_{\textsf {max}} = \textsf {645}$</TEX> GHz, respectively. The results obtained in this letter indicate that the reduction of <TEX>${L}_{\textsf {SD}}$</TEX> down to <TEX>$0.8~\mu \text{m}$</TEX> continues to improve both the dc and RF characteristics of the InGaAs/InAlAs HEMTs, and a possible increase in parasitic capacitance components, associated with a T-shaped, is still negligible in our device architecture.</P>