<P>In this letter, we investigated the impact of the source-to-drain spacing ( <TEX>${L}_{\textsf {SD}}$</TEX>) on the dc and high-frequency characteristics of indium-rich In<SUB>0.8</SUB>Ga<SUB>0.2</SUB>As/In...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107707342
2018
-
SCOPUS,SCIE
학술저널
1844-1847(4쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>In this letter, we investigated the impact of the source-to-drain spacing ( <TEX>${L}_{\textsf {SD}}$</TEX>) on the dc and high-frequency characteristics of indium-rich In<SUB>0.8</SUB>Ga<SUB>0.2</SUB>As/In...
<P>In this letter, we investigated the impact of the source-to-drain spacing ( <TEX>${L}_{\textsf {SD}}$</TEX>) on the dc and high-frequency characteristics of indium-rich In<SUB>0.8</SUB>Ga<SUB>0.2</SUB>As/In<SUB>0.52</SUB>Al<SUB>0.48</SUB>As high-electron mobility transistors (HEMTs) on a 3-in InP substrate. <TEX>${L}_{g} = \textsf {87}$</TEX> nm HEMTs with different values of <TEX>${L}_{\textsf {SD}}$</TEX> were fabricated ranging from 1.55 to <TEX>$0.8~\mu \text{m}$</TEX>, and their dc and RF responses were measured and analyzed in detail. In order to suppress the increase of the parasitic gate capacitance, we maintained the gate stem height as high as 200 nm in our device fabrication. Both the maximum transconductance (g<SUB>m_max</SUB>) and on-resistance ( <TEX>${R}_{\textsf {ON}}$</TEX>) improved as <TEX>${L}_{\textsf {SD}}$</TEX> scaled down to <TEX>$0.8~\mu \text{m}$</TEX>. At the same time, the high-frequency figures of the merit, such as current-gain cutoff frequency ( <TEX>${f}_{T}$</TEX>) and maximum oscillation frequency ( <TEX>${f}_{\textsf {max}}$</TEX>), increased with the reduction of <TEX>${L}_{\textsf {SD}}$</TEX>. These improvements are attributed to the reduction of series resistances. In particular, the <TEX>${L}_{g} =87$</TEX> nm device with an <TEX>${L}_{\textsf {SD}} = \textsf {0.8} \mu \text{m}$</TEX> exhibited an excellent combination of dc and RF characteristics, such as g<SUB>m_max</SUB> = 2.7 mS/ <TEX>$\mu \text{m}$</TEX>, <TEX>${R}_{\textsf {ON}} = \textsf {318}\,\,\Omega \cdot \mu \text{m}$</TEX>, <TEX>${f}_{T} = \textsf {519}$</TEX> GHz, and <TEX>${f}_{\textsf {max}} = \textsf {645}$</TEX> GHz, respectively. The results obtained in this letter indicate that the reduction of <TEX>${L}_{\textsf {SD}}$</TEX> down to <TEX>$0.8~\mu \text{m}$</TEX> continues to improve both the dc and RF characteristics of the InGaAs/InAlAs HEMTs, and a possible increase in parasitic capacitance components, associated with a T-shaped, is still negligible in our device architecture.</P>
Improved Negative Bias Stress Stability of Sol-Gel-Processed Mg-Doped In2O3 Thin Film Transistors
Thermal Analysis of Ball Grid Array Non-Volatile Memory Express Solid-State Drive in Vacuum
A Fully Closed Nano-Focus X-Ray Source With Carbon Nanotube Field Emitters