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Recent progress in Large Helical Device experiments
Akio Komori,T. Shimozuma,T. Ido,T. Kobuchi,T. Seki,T. Ozaki,T. Fujita,T. Watari,T. Akiyama,T. Tokuzawa,T. Uda,T. Minami,Y. Nakamura,Y. Torii,Y. Sakamoto,Y. Takeiri,Y. Nagayama,Y. Oka,Y. Narushima,Y. Y 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
In the Large Helical Device (LHD), some reactor-oriented experiments, i.e. high beta, high ion temperature, steady state operation, have produced remarkable progress in recent experimental campaigns. By optimizing the rotational transform, an average beta value of 4.3 %, which is the highest on record for helical devices, was achieved. The ICRF sustained steady-state discharges for more than 30 minutes, these were also successfully performed with the aid of the magnetic axis swing technique for the reduction of the heat load to the plasma-facing component. In the discharge, the total input energy to the plasma reached 1.3 GJ, which also established a new record.1
Studies on electron Bernstein wave heating in CHS and LHD at NIFS
Y. Yoshimura,H. Igami,S. Ferrando-Margalet,K. Nagasaki,S. Kubo,T. Shimozuma,M. Isobe,C. Suzuki,A. Shimizu,T. Akiyama,C. Takahashi,K. Nagaoka,S. Nishimura,T. Minami,K. Matsuoka,S. Okamura,T. Mutoh 한국진공학회 2007 한국진공학회 학술발표회초록집 Vol.16 No.2
Characteristics of second harmonic ECCD on CHS
yasuo Yoshimura,H. Matsushita,H. Igami,K. Nagasaki,K. Matsuoka,K. Ohkubo,K. Nagaoka,M. Isobe,S. Kobayashi,S. Okamura,S. Kubo,S. Nishimura,T. Minami,T. Akiyama,T. Notake,T. Shimozuma,A. Shimizu,C. Suzu 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
Second harmonic electron cyclotron current drive (ECCD) has been investigated on CHS (Compact Helical System) by using a 2-D steerable EC-beam injection system. The direction of the plasma current, which is the sum of bootstrap current and EC-driven current, is clearly reversed by a reversal of the EC-beam injection direction. The direction of driven current is consistent with expectation in the case of low-field side injection of EC wave. So far, a driven current up to 6 kA has been obtained when bootstrap current is less than 2 kA. It is confirmed that right-hand polarization and low density are effective for ECCD.
Investigation of anti-wear additives for synthetic esters
T. HASEGAWA,I. MINAMI,Y. KIDERA,K. HIRAO,M. MEMITA 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
Antiwear (AW) properties of phoshphonic acid derivatives for trimethylolpropane (TMP) esters were investigated under boundary conditions. AW effect of dialkyl phosphonates depends on polarity of base fluid. They provide good AW performance in less polar TMP esters, whereas their AW effect is not sufficient in polar TMP esters. Amine sails of phosphonic acid were developed as new AW additive system for TMP esters. They provide excellent AW performance even in polar TMP esters.
Sim, Dong Y.,Kurabayashi, T.,Minami, K.,Esashi, M. 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1
We report the design, fabrication and performance of a silicon microvalve to control precise gas flow. The valve is actuated by pneumatic force for opening and closing, and is assisted by electrostatic force for full shut off. The valve consists of two micromachined components which are bonded together by Au-Si eutectic bonding. One part contains the gas flow inlet and outlet, the other part deflectable silicon actuators which consist of corrugated diaphragms. This actuator is designed to be operated by combination of the pneumatic and electrostatic forces. A flow of 30 sewn at the outlet could be controlled, with the inlet pressure of 0.5 kgf/cm^(2). The leakage of the valve was 0.08 SCCM with the inlet pressure of 0.5 kgf/cm^(2) and the pneumatic air pressure of 0.5 kgf/cm^(2). This valve can potentially be baked for the purpose of precise gas control for sophisticated semiconductor processes.
Auger processes in InGaAs QDs grown by droplet method
이주인,Il Ki Han,F. Minami,Nobuyuki Koguchi,T. Kuroda 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.42
We present the carrier dynamics of InGaAs quantum dots with and without cladding layers grown by heterogeneous droplet epitaxy. Time-resolved photoluminescence spectroscopy showed double exponential decays for the rst excited states, including an initial fast decay, of highly excited quantum dots with cladding layers in contrast to the single exponential decay in quantum dots without cladding layers. Moreover, the GaAs barriers had slow rise times of about 220 ps, which corresponded to the initial fast decay time of the rst excited states of quantum dots. These results provide evidence of Auger processes between the carriers in the GaAs barriers and those in the rst-excited states of quantum dots.