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자외선과 MMS 를 처리한 절제회복 결함 및 숙련 포유동물 세포의 후복제 회복
박상대,이치건,김찬길,최수영 한국유전학회 1984 Genes & Genomics Vol.6 No.2
Post-replication repair was determined in CHO-Kl, HF and XP20S cells treated with UV-light and MMS by "pulse chase" experiments. All these cell lines showed normal growing patterns of nascent DNA in spite of the presence of damaged sites on the template DNA strands, even in the excision repair defective cells. These results suggest that post-replication repair may not be affected by damages caused by UV-light and MMS.
Jang, Jisu,Kim, Yunseob,Chee, Sang-Soo,Kim, Hanul,Whang, Dongmok,Kim, Gil-Ho,Yun, Sun Jin American Chemical Society 2020 ACS APPLIED MATERIALS & INTERFACES Vol.12 No.4
<P>Two-dimensional transition metal dichalcogenides (TMDCs) have emerged as promising materials for next-generation electronics due to their excellent semiconducting properties. However, high contact resistance at the metal-TMDC interface plagues the realization of high-performance devices. Here, an effective metal-interlayer-semiconductor (MIS) contact is demonstrated, wherein an ultrathin ZnO interlayer is inserted between the metal electrode and MoS<SUB>2</SUB>, providing damage-free and clean interfaces at electrical contacts. Using TEM imaging, we show that the contact interfaces were atomically clean without any apparent damages. Compared to conventional Ti/MoS<SUB>2</SUB> contacts, the MoS<SUB>2</SUB> devices with a Ti/ZnO/MoS<SUB>2</SUB> contact exhibit a very low contact resistance of 0.9 kΩ μm. These improvements are attributed to the following mechanisms: (a) Fermi-level depinning at the metal/MoS<SUB>2</SUB> interface by reducing interface disorder and (b) presence of interface dipole at the metal/ZnO interface, consequently reducing the Schottky barrier and contact resistance. Further, the contact resistivity of a Ti/ZnO/MoS<SUB>2</SUB> contact is insensitive to the variation of ZnO thickness, which facilitates large-scale production. Our work not only elucidates the underlying mechanisms for the operation of the MIS contact but also provides a simple and damage-free strategy for conventional aggressive metal deposition that is potentially useful for the realization of large-scale 2D electronics with low-resistance contacts.</P> [FIG OMISSION]</BR>