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RISS 인기검색어
- 검색키워드
- 저자 : Shu-Tong Chang (검색결과 4 건)
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Shu-Tong Chang,Shu-Hui Liao,Wei-Ching Wang,Chung-Yi Lin,Jun-Wei Fan 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
The physical mechanisms of electron mobility and balistic drain curent enhancement by stress are investigated. From modified higher-order k·p band calculations, the stress-induced split of the conduction band edge and the effective mass change are quantitatively evaluated. It was experimentaly and theoreticaly demonstrated that the energy surface of 2-fold valeys in Si NMOSFETs on a (001) wafers is especially warped due to a uniaxial [110] stress, resulting in a lighter transverse effective mass of the 2-fold valleys parallel to the stress. The physical reasons for the warped subband structure and the abnormal mobility enhancement caused by the uniaxial stres are investigated. The rates of variation of the experimental electron mobility in NMOSFETs on wafers with (01) orientations undera <110> uniaxial stress as a function of the channel direction is theoretically studied. The limits of electron mobility enhancement and the effectiveness of stress enginering in enhancing the balistic drain current of NMOSFETs are also discussed.
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Studying the Strain Effect on Silicon Atomic Wires
Shu-Tong Chang,Shu-Hui Liao,Hsiao-Chun Huang,Chee-Wee Liu,Chung-Yi Lin 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.6
The transport properties of a Si3 atomic wire system, which is formed by a Si3 cluster connected to two lithium electrodes with bias applied, is studied using the simulator Virtual NanoLab that is constructed based on the non-equilibrium Green’s function (NEGF) scheme. We investigated the Si3 atomic wire system under three strain conditions (tensile, compressive and shear). Different trends in the I-V characteristics are observed for the three cases at various applied biases. The transmission spectrum T(E, Vb), as a function of energy and applied biases, are analyzed. The interactions among eigenstates of the molecular projected self-consistent Hamiltonian (MPSH) strongly affect the transport properties of the system.
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Electrical Characteristics of SiGe-base Bipolar Transistors on Thin-film SOI Substrates
Shu-Hui Liao,Shu-Tong Chang 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.61
This paper, based on two-dimensional simulations, provides a comprehensive analysis of the electrical characteristics of the Silicon germanium (SiGe)-base bipolar transistors on thin-film siliconon-insulator (SOI) substrates. The impact of the buried oxide thickness (TOX),the emitter width (WE), and the lateral distance between the edge of the intrinsic base and the reach-through region (Lcol) on both the AC and DC device characteristics was analyzed in detail. Regarding the DC characteristics, the simulation results suggest that a thicker TOX gives a larger base-collector breakdown voltage (BVCEO), whereas reducing the TOX leads to an enhanced maximum electric field at the B-C junction. As for the AC characteristics, cut-off frequency (fT) increases slightly with increasing buried oxide thickness and finally saturates to a constant value when the buried oxide thickness is about 0.15 µm. The collector-substrate capacitance (C CS) decreases with increasing buried oxide thickness while the maximum oscillation frequency (f max) increases with increasing buried oxide thickness. Furthermore, the impact of self-heating effects in the device was analyzed in various areas. The thermal resistance as a function of the buried oxide thickness indicates that the thermal resistance of the SiGe-base bipolar transistor on a SOI substrate is slightly higher than that of a bulk SiGe-base bipolar transistor. The thermal resistance is reduced by ∼37.89% when the emitter width is increased by a factor of 5 for a fixed buried oxide thickness of 0.1 µm. All the results can be used to design and optimize SiGe-base bipolar transistors on SOI substrates with minimum thermal resistance to enhance device performance.
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Risk of Malignancy Associated with a Maternal Family History of Cancer
Liu, Ju,Shu, Tong,Chang, Sheng,Sun, Ping,Zhu, Hui,Li, Huai Asian Pacific Journal of Cancer Prevention 2014 Asian Pacific journal of cancer prevention Vol.15 No.5
This study was conducted in order to obtain a screening and early detection reference for children whose mothers had been diagnosed with cancer. Data for 276 mother-child pairs with malignant tumors were analyzed. The distribution of cancers in affected families was generally similar to that of the general Chinese population, and correspondingly breast cancer was the most common malignancy amongst daughters whose mother had cancer (32.7%). The most prevalent cancer amongst sons with affected mothers was gastric cancer, rather than lung cancer. Daughters were more likely to have the same kind of malignant tumor as their mother (P<0.05), and were more likely to develop breast cancer than any other malignant disease if their mother had a breast tumor (P<0.0001). Likewise, if the mother was diagnosed with breast or gynecological cancer, the daughter was more likely to be diagnosed with breast or gynecological cancer than any other cancer (P<0.01). Daughters and sons developed malignant diseases 11 and 6.5 years earlier than their mothers, respectively (P<0.0001).Women with a mother who suffered cancer should be screened for malignancy from 40 years of age especially for breast, lung, and gynecological cancers. For men with affected mothers, screening should start when they are 45 years old focusing particularly on lung and digestive system cancers.
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