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Ga Content and Thickness Inhomogeneity Effects on Cu(In, Ga)Se2 Solar Modules
Xiaobo Zhu,Tzu-Huan Cheng,Chee-Wee Liu 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.4
The fluctuation of Ga content and absorption layer thickness of Cu(In,Ga)Se2 (CIGS) solar modules is investigated by 3-dimensional numericalsimulation. The band gap of CIGS is increased by the increasing Gacontent, and the residual compressive strain. Strain effect worsens thedegradation of the power conversion efficiency of CIGS module in additionto Ga fluctuation. The intracell Ga fluctuation degrades the open circuitvoltage due to the minimum open circuit voltage in the parallelconfiguration, and also affects the short circuit current due to the Gadependentlight absorption. The intercell Ga fluctuation leads to a moresignificant degradation for CIGS solar module efficiency than the intracellGa fluctuation due to the additional degradation of the fill factor. Thethickness fluctuation has a small effect on open circuit voltage, but causesstrong degradation of short circuit current and fill factor, which leads to amore significant degradation on power conversion efficiency than Gafluctuation to the same fluctuation percentage. In reality, the thickness canbe tightly controlled within the fluctuation of 5% or less.
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Studying the Strain Effect on Silicon Atomic Wires
Shu-Tong Chang,Shu-Hui Liao,Hsiao-Chun Huang,Chee-Wee Liu,Chung-Yi Lin 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.6
The transport properties of a Si3 atomic wire system, which is formed by a Si3 cluster connected to two lithium electrodes with bias applied, is studied using the simulator Virtual NanoLab that is constructed based on the non-equilibrium Green’s function (NEGF) scheme. We investigated the Si3 atomic wire system under three strain conditions (tensile, compressive and shear). Different trends in the I-V characteristics are observed for the three cases at various applied biases. The transmission spectrum T(E, Vb), as a function of energy and applied biases, are analyzed. The interactions among eigenstates of the molecular projected self-consistent Hamiltonian (MPSH) strongly affect the transport properties of the system.
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