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이현휘,김상우,Shizuo Fujita 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
We report successful synthesis of ZnO nanorods on metal (Cr)-deposited Si substrates in a thermal chemical vapor deposition (CVD) process via a self-catalytic mechanism at relatively low growth temperatures of 400 and 500 ℃. The nanotips were densely grown onto the Cr layer while ZnO nanorods with low density were synthesized on the same substrates. Grazing-incident wide-angle X-ray scattering measurements showed a uniform distribution and a random directionality of the nanotips and the nanorods grown on Cr-deposited Si substrates. Free-exciton emission from the nanorods was clearly observed from the samples at a very low temperature of 50 K in the photolu- minescence measurements. In addition, strong free exciton and relatively weak deep level emission bands were detected from both samples even at room temperature, indicating the ZnO nanotips and nanorods on Cr/Si substrates in this work had a low defect density.
Growth of ZnO Nanostructures by Using Ultrasonic Spray Chemical Vapor Deposition with a Au Catalyst
Hiroyuki Nishinaka,Toshiyuki Kawaharamura,Shizuo Fujita 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
ZnO nanorods were grown by using an ultrasonic spray chemical vapor deposition method with a Au catalyst. The growth was performed in the vapor-liquid-solid growth mode. The lowmagnification and the high-resolution transmission electron microscopy (TEM) observation revealed that the ZnO nanorods had no stacking faults and were single crystals. The high-esolution TEM showed that the lattice length of the ZnO nanorods grown at 900 ℃ was 0.16 nm and that the growth direction was [11¯20]. The diameters of the ZnO nanorods almost depended on those of the Au particles that aggregated from a Au thin film. The diameters of the ZnO nanorods were slightly bigger than those of the Au particles because the ZnO nanorods grew not only in the direction along the nanorods but also in the direction of the diameter. The room-temperature photoluminescence emission of the ZnO nanorods was dominated by a near band-edge luminescence with weak deep-level emissions.
김상우,Han-Ki Kim,김경국,Shizuo Fujita,Soon-Wook Jeong 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.III
ZnO thin films and nanostructures were grown on Si substrates in a metal organic chemical vapor deposition (MOCVD) process as a function of growth conditions including source flow rates and growth temperatures. ZnO thin films with smooth surface morphology were grown in growth conditions with low zinc source flow rates and high growth temperatures. On the other hand, the surface morphology of thin films became dramatically rough on increasing the flow rate of the zinc source, resulting in the formation of various kinds of nanostructures such as nanorods, nanotowers, and nanocactuses, depending on the MOCVD growth temperature. This result is mainly due to the strong tendency of ZnO toward a three-dimensional (3D) growth mode with higher flow rates of the zinc source in a MOCVD process, indicating that a route from thin films to nanostructures relies on the 3D growth behavior of ZnO.
Mist CVD Growth of ZnO-Based Thin Films and Nanostructures
Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamaka,Yoshio Masuda,Jian-Guo Lu,Shizuo Fujita 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
As a safe, simple, environmental-friendly, and cost-effective growth technique of oxide materials, we have developed the mist chemical vapor deposition method. To grow ZnO, a water and/or alcohol solution of zinc-compounds (for example, zinc acetate) is used as the source, and micronsized aerosol or mist particles formed by ultrasonic atomization are supplied to the reaction area with a carrier gas. The ZnO thin films grown on glass substrates exhibited c-axis orientation under the selected growth conditions. The transparency in the visible region was higher than 90 %, the room temperature photoluminescence showed near band edge emission without noticeable deep level emissions, and the surface root-mean-square roughness was 7.5 nm despite the polycrystalline structure. These results are satisfactory for optical applications. The minimum resistivity, however, by gallium doping was 1.1 × 10-3 Ωcm, which needs further progress by enlarging the grain size. The growth of other oxide thin films, for example, MgO and CdO, as well as ZnO nanorods was reported, suggesting potential of wide applications of this growth technique to various oxide thin films and nanostructures with the friendliness to environment.