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        Growth of ZnO Nanostructures by Using Ultrasonic Spray Chemical Vapor Deposition with a Au Catalyst

        Hiroyuki Nishinaka,Toshiyuki Kawaharamura,Shizuo Fujita 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5

        ZnO nanorods were grown by using an ultrasonic spray chemical vapor deposition method with a Au catalyst. The growth was performed in the vapor-liquid-solid growth mode. The lowmagnification and the high-resolution transmission electron microscopy (TEM) observation revealed that the ZnO nanorods had no stacking faults and were single crystals. The high-esolution TEM showed that the lattice length of the ZnO nanorods grown at 900 ℃ was 0.16 nm and that the growth direction was [11¯20]. The diameters of the ZnO nanorods almost depended on those of the Au particles that aggregated from a Au thin film. The diameters of the ZnO nanorods were slightly bigger than those of the Au particles because the ZnO nanorods grew not only in the direction along the nanorods but also in the direction of the diameter. The room-temperature photoluminescence emission of the ZnO nanorods was dominated by a near band-edge luminescence with weak deep-level emissions.

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        Mist CVD Growth of ZnO-Based Thin Films and Nanostructures

        Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamaka,Yoshio Masuda,Jian-Guo Lu,Shizuo Fujita 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5

        As a safe, simple, environmental-friendly, and cost-effective growth technique of oxide materials, we have developed the mist chemical vapor deposition method. To grow ZnO, a water and/or alcohol solution of zinc-compounds (for example, zinc acetate) is used as the source, and micronsized aerosol or mist particles formed by ultrasonic atomization are supplied to the reaction area with a carrier gas. The ZnO thin films grown on glass substrates exhibited c-axis orientation under the selected growth conditions. The transparency in the visible region was higher than 90 %, the room temperature photoluminescence showed near band edge emission without noticeable deep level emissions, and the surface root-mean-square roughness was 7.5 nm despite the polycrystalline structure. These results are satisfactory for optical applications. The minimum resistivity, however, by gallium doping was 1.1 × 10-3 Ωcm, which needs further progress by enlarging the grain size. The growth of other oxide thin films, for example, MgO and CdO, as well as ZnO nanorods was reported, suggesting potential of wide applications of this growth technique to various oxide thin films and nanostructures with the friendliness to environment.

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