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Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays
Ahn, Seung‐,Eon,Song, Ihun,Jeon, Sanghun,Jeon, Youg Woo,Kim, Young,Kim, Changjung,Ryu, Byungki,Lee, Je‐,Hun,Nathan, Arokia,Lee, Sungsik,Kim, Gyu Tae,Chung, U‐,In WILEY‐VCH Verlag 2012 Advanced Materials Vol.24 No.19
<P><B>The photoresponse characteristics of metal‐oxide (MeO) semiconductor photosensors</B> have been studied. Compared to the amorphous‐Si‐based photo‐TFT, the MeO photo‐TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high‐speed array operation is used, yet maintaining a simple array architecture as a solution for large‐area interactive displays.</P>
Multifunctional Polymer Nanocomposites Reinforced by 3D Continuous Ceramic Nanofillers
Ahn, Changui,Kim, Sang-Min,Jung, Jae-Wook,Park, Junyong,Kim, Taegeon,Lee, Sang Eon,Jang, Dongchan,Hong, Jung-Wuk,Han, Seung Min,Jeon, Seokwoo American Chemical Society 2018 ACS NANO Vol.12 No.9
<P>Polymer nanocomposites with inclusion of ceramic nanofillers have relatively high yield strength, elastic moduli, and toughness that therefore are widely used as functional coating and films for optoelectronic applications. Although the mechanical properties are enhanced with increasing the fraction of nanofiller inclusion, there generally is an upper limit on the amount of nanofiller inclusion because the aggregation of the fillers in the polymer matrix, which typically occurs, degrades the mechanical and/or optical performances above 5 vol % of inclusions. Here, we demonstrate an unconventional polymer nanocomposite composed of a uniformly distributed three-dimensional (3D) continuous ceramic nanofillers, which allows for extremely high loading (∼19 vol %) in the polymer matrix without any concern of aggregation and loss in transparency. The fabrication strategy involves conformal deposition of Al<SUB>2</SUB>O<SUB>3</SUB> nanolayer with a precise control in thickness that ranges from 12 to 84 nm on a 3D nanostructured porous polymer matrix followed by filling the pores with the same type of polymer. The 3D continuous Al<SUB>2</SUB>O<SUB>3</SUB> nanolayers embedded in the matrix with extremely high filler rate of 19.17 vol % improve compressive strength by 142% compared to the pure epoxy without Al<SUB>2</SUB>O<SUB>3</SUB> filler, and this value is in agreement with theoretically predicted strength through the rule of mixture. These 3D nanocomposites show superb transparency in the visible (>85% at 600 nm) and near-IR (>90% at 1 μm) regions and improved heat dissipation beyond that of conventional Al<SUB>2</SUB>O<SUB>3</SUB> dispersed nanocomposites with similar filler loading of 15.11 vol % due to the existence of a continuous thermal conduction path through the oxide network.</P> [FIG OMISSION]</BR>
Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> 강유전체 박막의 다양한 분극 스위칭 모델에 의한 동역학 분석
안승언,Ahn, Seung-Eon 한국재료학회 2020 한국재료학회지 Vol.30 No.2
Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO<sub>2</sub>) have led to the expectation that HfO<sub>2</sub> could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO<sub>2</sub> thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO<sub>2</sub>-based MFM capacitors by applying various ferroelectric switching characteristics models.