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Jung Moonyoung,Ahn Dante,Ahn Seung-Eon 한국물리학회 2020 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.77 No.9
In order to improve the performance of memory semiconductors, devices are miniaturized and the degree of integration is increasing. In response to this, fields such as FTJ, Fe-FET, and FeRAM using ferroelectrics are attracting attention. Among them, the hafnia-based ferroelectric has emerged as the core material of the next generation semiconductor memory using ferroelectric due to its advantages such as thickness and CMOS process compatibility. In order for the hafnia material to be mass-produced and commercialized in the industry, electrical properties must be evaluated in various environments. In order to contribute to this, this study observes the temperature-dependent change of hafnia based capacitor, and reports its mechanism.