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Sangheon Oh,Jaesung Jo,Hyunjae Lee,Gyo Sub Lee,Jung-Dong Park,Changhwan Shin 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.3
As semiconductor devices are being scaled down, random variation becomes a critical issue, especially in the case of static random access memory (SRAM). Thus, there is an urgent need for statistical methodologies to analyze the impact of random variations on the SRAM. In this paper, we propose a novel sampling method based on the concept of a confidence ellipse. Results show that the proposed method estimates the SRAM margin metrics in highsigma regimes more efficiently than the standard Monte Carlo (MC) method.
Oh, Sangheon,Jo, Jaesung,Lee, Hyunjae,Lee, Gyo Sub,Park, Jung-Dong,Shin, Changhwan The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.3
As semiconductor devices are being scaled down, random variation becomes a critical issue, especially in the case of static random access memory (SRAM). Thus, there is an urgent need for statistical methodologies to analyze the impact of random variations on the SRAM. In this paper, we propose a novel sampling method based on the concept of a confidence ellipse. Results show that the proposed method estimates the SRAM margin metrics in high-sigma regimes more efficiently than the standard Monte Carlo (MC) method.
3-D Quasi-Atomistic Model for Line Edge Roughness in Nonplanar MOSFETs
Oh, Sangheon,Shin, Changhwan Institute of Electrical and Electronics Engineers 2016 IEEE transactions on electron devices Vol.63 No.12
<P>As the physical sizes of devices have been scaled down, the negative impact of process-induced random variation on device performance has increased; therefore, there is an urgent demand for advanced simulation methods for variation. In this paper, a 3-D quasi-atomistic simulation methodology for line edge roughness (LER) in nonplanar devices, such as FinFETs and gate-all-around (GAA) FETs, is proposed. In addition, a simple gate oxide layer model is proposed to analyze the impact of LER on device performance while excluding the impact of oxide thickness variation. To verify the importance of the quasi-atomistic 3-D LER model and to compare the LER-induced performance variation in a FinFET to that in a GAA FET, the case studies using the 3-D quasi-atomistic LER model for FinFETs and GAA FETs are performed.</P>
오상헌(Sangheon Oh),박규식(Kyusik Park) Korean Institute of Information Scientists and Eng 2016 정보과학회논문지 Vol.43 No.1
This paper proposes a new sound localization algorithm that can improve localization performance based on a tetrahedron-shaped microphone array. Sound localization system estimates directional information of sound source based on the time delay of arrival(TDOA) information between the microphone pairs in a microphone array. In order to obtain directional information of the sound source in three dimensions, the system requires at least three microphones. If one of the microphones fails to detect proper signal level, the system cannot produce a reliable estimate. This paper proposes a tetrahedron- shaped sound localization system with a coordinate transform method by adding one microphone to the previously known triangular-shaped system providing more robust and reliable sound localization. To verify the performance of the proposed algorithm, a real time simulation was conducted, and the results were compared to the previously known triangular-shaped system. From the simulation results, the proposed tetrahedron-shaped sound localization system is superior to the triangular-shaped system by more than 46% for maximum sound source detection.
Effective wrapping of graphene on individual Li4Ti5O12grains for high-rate Li-ion batteries
Oh, Yuhong,Nam, Seunghoon,Wi, Sungun,Kang, Joonhyeon,Hwang, Taehyun,Lee, Sangheon,Park, Helen Hejin,Cabana, Jordi,Kim, Chunjoong,Park, Byungwoo The Royal Society of Chemistry 2014 Journal of Materials Chemistry A Vol.2 No.7