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Microstructure of Intrinsic ZnO Thin Film Grown by Using Atomic Layer Deposition
변동진,허재성,Samseok Jang,김동환,손창식 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
ZnO thin lms were deposited by using atomic layer deposition with a fixed purging time of the DEZinc and the H2O sources of 8 sec and an injection time of 1 sec per source. The ZnO films were formed in the temperature range from 30 ℃ to 300 ℃. The microstructure was altered by varying the temperature, and the shapes and the sizes of the grains were altered by changing the preferred orientation. The surface morphologies and the shapes of the grains were correlated with the preferred orientation, which changed with the growth temperature.
Growth of Boron-Doped-ZnO by RF Magnetron Sputtering for CIGS Solar Cells
허재성,Jihye Kim,Samseok Jang,송정빈,변동진,손창식,윤재호,윤경훈 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
The cell performance of CuIn1-x GaxSe₂ (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 × 10-2 Ω·cm and its transmittance was 85 ~ 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.