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RISS 인기검색어
- 검색키워드
- 저자 : Saji Joseph (검색결과 3 건)
- 무료
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Threshold Voltage Control through Layer Doping of Double Gate MOSFETs
Saji Joseph,George James T,Vincent Mathew 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.3
Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an o therwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures- one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the centre- are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied. It is observed that an n-doped layer in the channel reduces the threshold voltage and increases the drive current, when compared with a device of undoped channel. The reduction in the threshold voltage and increase in the drain current are found to increase with the thickness and the level of doping of the layer. The leakage current is larger than that of an undoped channel, but less than that of a uniformly doped channel. For a channel with p-doped layer, the threshold voltage increases with the level of doping and the thickness of the layer, accompanied with a reduction in drain current. The devices with doped middle layers and doped gate layers show almost identical behavior, apart from the slight difference in the drive current. The doping level and the thickness of the layers can be used as a tool to adjust the threshold voltage of the device indicating the possibility of easy fabrication of ICs having FETs of different threshold voltages, and the rest of the channel, being intrinsic having high mobility, serves to maintain high drive current in comparison with a fully doped channel.
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Experimental studies on domestic refrigeration system with brazed plate heat exchanger as condenser
P. Saji Raveendran,S. Joseph Sekhar 대한기계학회 2016 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.30 No.6
In view of Kyoto protocol, there is a pressing need to reduce the energy consumption and environmental impacts of domestic appliances. In the total energy consumption of household appliances, domestic refrigerator plays a vital role. Alternate refrigerants and improvement in the performance of the components can contribute to tackle the above issue in a domestic refrigeration system. In this paper, the performance of a domestic refrigeration system with brazed plate heat exchanger as condenser, and working with refrigerants such as R290/R600a and R134a was studied using experimental method. The result showed that the system with water-cooled brazed plate heat exchanger reduces the per day energy consumption of a system from 21% to 27% and increases the COP from 52% to 68%, when compared to conventional system. The compressor discharge temperature and dome temperature are also dampened. For R134a and R290/R600a, the TEWI of the system with water-cooled brazed plate heat exchanger is lower than that of the system with air-cooled condenser by 26.8% and 21%, respectively. Among the refrigerants, R290/R600a showed higher performance than R134a.
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Effect of Counter-doping Thickness on Double-gate MOSFET Characteristics
George James T,Saji Joseph,Vincent Mathew 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.2
This paper presents a study of the influence of variation of counter doping thickness on short channel effect in symmetric double-gate (DG) nano MOSFETs. Short channel effects are estimated from the computed values of current-voltage (I-V) characteristics. Two dimensional Quantum transport equations and Poisson equations are used to compute DG MOSFET characteristics. We found that the transconductance (gm) and the drain conductance (gd) increase with an increase in p-type counter-doping thickness (Tc). Very high value of transconductance (gm= 38 mS/㎛) is observed at 2.2 ㎚ channel thickness. We have established that the threshold voltage of DG MOSFETs can be tuned by selecting the thickness of counter-doping in such device.
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