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RISS 인기검색어
- 검색키워드
- 저자 : Rummeli, Mark H. (검색결과 4 건)
- 무료
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Room temperature single-step synthesis of metal decorated boron-rich nanowires via laser ablation
Mark H. Rummeli,Barbara Trzebicka,Gianaurelio Cuniberti,Thomas Gemming,Alicja Bachmatiuk,Ignacio G. Gonzalez-Martine 나노기술연구협의회 2019 Nano Convergence Vol.6 No.14
Hybrid nanostructures, such as those with nanoparticles anchored on the surface of nanowires, or decorated nanowires, have a large number of potential and tested applications such as: gas sensing, catalysis, plasmonic waveguides, supercapacitors and more. The downside of these nanostructures is their production. Generally, multi-step synthesis procedures are used, with the nanowires and the nanoparticles typically produced separately and then integrated. The few existent single-step methods are lengthy or necessitate highly dedicated setups. In this paper we report a single-step and rapid (ca. 1 min) laser ablation synthesis method which produces a wide variety of boron-rich decorated nanowires. Furthermore, the method is carried at room temperature. The synthesis process consists on a filamentary jet ejection process driven by pressure gradients generated by the ablation plume on the rims of the irradiation crater. Simultaneously nanoparticles are nucleated and deposited on the filaments thus producing hybrid decorated nanowires.
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Dominantly epitaxial growth of graphene on Ni (111) substrate
Fogarassy, Z.,Rummeli, M.H.,Gorantla, S.,Bachmatiuk, A.,Dobrik, G.,Kamaras, K.,Biro, L.P.,Havancsak, K.,Labar, J.L. New York] ; North-Holland 2014 APPLIED SURFACE SCIENCE - Vol.314 No.-
Graphene was grown on a Ni (111) thin layer, used as a substrate. The Ni layer itself was grown on single crystal sapphire (0001). Carbon was deposited by chemical vapor deposition using a mixture of methane, argon and hydrogen at atmospheric pressure implementing a constant gas flow (4.8-5l/min) varying both the gas composition and the deposition temperature (900-980<SUP>o</SUP>C) and cooling rate (8-16<SUP>o</SUP>C/min) in the different experiments. Formation of uninterruptedly grown epitaxial single layer graphene was observed over the Ni (111) thin film substrate. Epitaxial growth was proven through STM measurements. Electron diffraction studies, also confirmed by STM, demonstrated that only one dominant orientation exists in the graphene, both results providing evidence of the epitaxial growth. On top of the, continuous, large area graphene flakes were also observed with sizes varying between 10nm and 10μm. Most of the top flakes are turbostratically related to the continuous underlying epitaxial graphene layer. The formation of the graphene layer with constant dominant orientation was observed over millimeter wide areas. Large areas (~20-40μm in diameter) of continuous, epitaxial graphene, free of additional deposits and flakes were obtained for the best set of growth parameters.
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Pang, Jinbo,Bachmatiuk, Alicja,Fu, Lei,Yan, Chenglin,Zeng, Mengqi,Wang, Jiao,Trzebicka, Barbara,Gemming, Thomas,Eckert, Juergen,Rummeli, Mark H. American Chemical Society 2015 The Journal of Physical Chemistry Part C Vol.119 No.23
<P>One of the more common routes to fabricate graphene is by chemical vapor deposition (CVD). This is primarily because of its potential to scale up the process and produce large area graphene. For the synthesis of large area monolayer Cu is probably the most popular substrate since it has a low carbon solubility enabling homogeneous single-layer sheets of graphene to form. This process requires a very clean substrate. In this work we look at the efficiency of common pretreatments such as etching or wiping with solvents and compare them to an oxidation treatment at 1025 °C followed by a reducing process by annealing in H<SUB>2</SUB>. The oxidation/reduction process is shown to be far more efficient allowing large area homogeneous single layer graphene formation without the presence of additional graphene flakes which form from organic contamination on the Cu surface.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2015/jpccck.2015.119.issue-23/acs.jpcc.5b03911/production/images/medium/jp-2015-03911k_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp5b03911'>ACS Electronic Supporting Info</A></P>
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Vertical Graphene Growth from Amorphous Carbon Films Using Oxidizing Gases
Bachmatiuk, Alicja,Boeckl, John,Smith, Howard,Ibrahim, Imad,Gemming, Thomas,Oswald, Steffen,Kazmierczak, Wojciech,Makarov, Denys,Schmidt, Oliver G.,Eckert, Juergen,Fu, Lei,Rummeli, Mark H. American Chemical Society 2015 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.119 No.31
<P>Amorphous carbon thin films are technologically important materials that range in use from the semiconductor industry to corrosion-resistant films. Their conversion to crystalline graphene layers has long been pursued; however, typically this requires excessively high temperatures. Thus, crystallization routes which require reduced temperatures are important. Moreover, the ability to crystallize amorphous carbon at reduced temperatures without a catalyst could pave the way for practical graphene synthesis for device fabrication without the need for transfer or post-transfer gate deposition. To this end we demonstrate a practical and facile method to crystallize deposited amorphous carbon films to high quality graphene layers at reduced annealing temperatures by introducing oxidizing gases during the process. The reactive gases react with regions of higher strain (energy) in the system and accelerate the graphitization process by minimizing criss-cross-linkages and accelerating C–C bond rearrangement at defects. In other words, the movement of crystallite boundaries is accelerated along the carbon hexagon planes by removing obstacles for crystallite coalescence.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2015/jpccck.2015.119.issue-31/acs.jpcc.5b05167/production/images/medium/jp-2015-05167v_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp5b05167'>ACS Electronic Supporting Info</A></P>
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