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Graphene nanopatterns with crystallographic orientation control for nanoelectronic applications
Biro, L.P.,Nemes-Incze, P.,Dobrik, G.,Hwang, C.,Tapaszto, L. Elsevier 2011 Diamond and related materials Vol.20 No.8
The possibility of parallel processing of several features was investigated experimentally for the two methods allowing the crystallographically controlled nanopatterning of graphene: scanning tunneling lithography (STL) and carbothermal etching (CTE). It was found that with multitip systems both methods are suitable for parallel processing. CTE has the advantages that only in the atomic force microscope (AFM) indentation phase is needed the multitip system and it can reveal the location of grain boundaries, so that the nanodevices can be placed in a way that they do not cross grain boundaries. STL is well suited for purposefully producing twisted graphene multilayers with precisely-know misorientations of the individual layers, as also evidenced by Moire-type patterns observed in the atomic resolution scanning tunneling microscopy (STM) images.
Dominantly epitaxial growth of graphene on Ni (111) substrate
Fogarassy, Z.,Rummeli, M.H.,Gorantla, S.,Bachmatiuk, A.,Dobrik, G.,Kamaras, K.,Biro, L.P.,Havancsak, K.,Labar, J.L. New York] ; North-Holland 2014 APPLIED SURFACE SCIENCE - Vol.314 No.-
Graphene was grown on a Ni (111) thin layer, used as a substrate. The Ni layer itself was grown on single crystal sapphire (0001). Carbon was deposited by chemical vapor deposition using a mixture of methane, argon and hydrogen at atmospheric pressure implementing a constant gas flow (4.8-5l/min) varying both the gas composition and the deposition temperature (900-980<SUP>o</SUP>C) and cooling rate (8-16<SUP>o</SUP>C/min) in the different experiments. Formation of uninterruptedly grown epitaxial single layer graphene was observed over the Ni (111) thin film substrate. Epitaxial growth was proven through STM measurements. Electron diffraction studies, also confirmed by STM, demonstrated that only one dominant orientation exists in the graphene, both results providing evidence of the epitaxial growth. On top of the, continuous, large area graphene flakes were also observed with sizes varying between 10nm and 10μm. Most of the top flakes are turbostratically related to the continuous underlying epitaxial graphene layer. The formation of the graphene layer with constant dominant orientation was observed over millimeter wide areas. Large areas (~20-40μm in diameter) of continuous, epitaxial graphene, free of additional deposits and flakes were obtained for the best set of growth parameters.
Koó,s, Antal A.,Vancsó,, Pé,ter,Magda, Gá,bor Z.,Osvá,th, Zoltá,n,Kerté,sz, Krisztiá,n,Dobrik, Gergely,Hwang, Chanyong,Tapasztó,, Levente,Bir&oacu Elsevier 2016 Carbon Vol.105 No.-
<P>Heterostructures of 2D materials are expected to become building blocks of next generation nanoelectronic devices. Therefore, the detailed understanding of their interfaces is of particular importance. In order to gain information on the properties of the graphene - MoS2 system, we have investigated MoS2 sheets grown by chemical vapour deposition (CVD) on highly ordered pyrolytic graphite (HOPG) as a model system with atomically clean interface. The results are compared with results reported recently for MoS2 grown on epitaxial graphene on SiC. Our STM study revealed that the crystallographic orientation of MoS2 sheets is determined by the orientation of the underlying graphite lattice. This epitaxial orientation preference is so strong that the MoS2 flakes could be moved on HOPG with the STM tip over large distances without rotation. The electronic properties of the MoS2 flakes have been investigated using tunneling spectroscopy. A significant modification of the electronic structure has been revealed at flake edges and grain boundaries. These features are expected to have an important influence on the performance of nanoelectronic devices. We have also demonstrated the ability of the STM to define MoS2 nanoribbons down to 12 nm width, which can be used as building blocks for future nanoelectronic devices. (C) 2016 Elsevier Ltd. All rights reserved.</P>