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Crowding-out Effect of SOEs on Market-based Organizational Forms in China: Implication for Korea
Chenguang Huang,윤경환,Ruize Cai 한국무역연구원 2022 무역연구 Vol.18 No.4
Purpose We examine how an old organizational form interacts with a new one to maintain the former’s status and legitimacy during the change process in institutional logics. We focus on how state-owned enterprises (SOEs) crowd out three market-based organizational forms to maintain legitimacy and status during institutional change from state logic to market logic in China. In addition, we examine the moderating effects of export intensity and firm age of market-based enterprises on the aforementioned relationship. Design/Methodology/Approach To test our hypotheses, we use a panel data set on manufacturing firms in China from 2011 to 2015. We utilize event history analysis because our dependent variable is the exit of market-based firms. We select the parametric Weibull model because it outperforms other survival models. Findings Our results generally support our hypotheses. SOEs crowd out market-based organizational forms mainly owing to identity conflict. SOEs are likely to be hostile toward market-based firms with strong market identity, such as those with high export intensity and old market-based firms. Research Implications Findings provide implications for policy makers and market-based enterprise managers in Korea. We highlight that Chinese and Korean SOEs are not precisely comparable but they are similar in several ways. We propose that policy makers in Korea develop and implement policy measures to control SOEs’ negative actions toward market-based firms and to dilute SOEs’ state identity. Lastly, we suggest that Korean market-based enterprise managers consider the effect of market identity on their survival and build connections with the government to strengthen market-based firms’ competitiveness and legitimacy.
Miao Cui,Qinglei Bu,Yutao Cai,Ruize Sun,Wen Liu,Huiqing Wen,Sang Lam,Yung. C. Liang,Ivona Z. Mitrovic,Stephen Taylor,Paul R. Chalker,Cezhou Zhao 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
This study proposed a 100 kHz, 5V/11V boost converter with an integrated gate driver for a power switching device using recessed E-mode MIS-HFETs. The integrated gate driver consisting of multi-stages DCFL (Direct-Coupled FET Logic) inverters and a buffer stage, has large input swing (up to 10 V) and wide noise margin with gate dielectric, which benefits applications requiring large gate swing without any additional drivers or level shifters. The impact of transistor size on rise times and fall times have been studied. Either buffer stage or larger width of DCFL inverter can reduce rise times from 2.4 μs to less than 0.5 μs at 100 kHz, so the output voltage of boost converter is increased by 10 % at a duty cycle of 0.7. However, large buffer width can result in high gate overshoot and oscillation, indicating careful design to balance switching speed and oscillation.