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Rock-Hyun Baek,Chang-Ki Baek,Sung-Woo Jung,Yun Young Yeoh,Dong-Won Kim,Jeong-Soo Lee,Kim, D.M.,Yoon-Ha Jeong IEEE 2010 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.9 No.2
<P>The series resistance, <I>R</I> <SUB>sd</SUB> in silicon nanowire FETs (Si-NWFET) is extracted unambiguously, using the <I>Y</I> -function technique, in conjunction with the drain current and transconductance data. The volume channel inversion in Si-NWFET renders the charge carriers relatively free of the surface scattering and concomitant degradation of mobility. As a result, the <I>Y</I> -function of Si-NWFET is shown to exhibit a linear behavior in strong inversion, thereby enabling accurate extraction of <I>R</I> <SUB>sd</SUB>. The technique is applied to nanowire devices with channel lengths 82, 86, 96, 106, 132, and 164 nm, respectively. The extracted <I>R</I> <SUB>sd</SUB> values are shown nearly flat with respect to the gate voltage, as expected from Ohmic contacts but showed a large variation for all channel lengths examined. This indicates the process parameters involved in the formation of series contacts vary considerably from device to device. The present method only requires a single device for extraction of <I>R</I> <SUB>sd</SUB> and the iteration procedure for data fitting is fast and stable.</P>
<tex> $C$</tex>– <tex> $V$</tex> Characteristics in Undoped Gate-All-Around Nanowire FET Array
Rock-Hyun Baek,Chang-Ki Baek,Sang-Hyun Lee,Sung Dae Suk,Ming Li,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Jeong-Soo Lee,Kim, D M,Yoon-Ha Jeong IEEE 2011 IEEE electron device letters Vol.32 No.2
<P>Presented in this letter are the <I>C</I>-<I>V</I> data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The <I>C</I>-<I>V</I> curves were examined over a range from accumulation to inversion with varying frequencies and at different electrode configurations. The gate response of the undoped and floating channel is investigated using <I>C</I>-<I>V</I> data, and the inversion charge and carrier mobility are accurately extracted by eliminating the effects of parasitic capacitances and series resistance <I>R</I><SUB>sd</SUB>. These observed data are compared with the data from planar MOS capacitor.</P>
Rock-Hyun Baek,Chang-Ki Baek,Hyun-Sik Choi,Jeong-Soo Lee,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Kinam Kim,Kim, D M,Yoon-Ha Jeong IEEE 2011 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.10 No.3
<P>In this paper, the volume trap densities <I>Nt</I> are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting <I>Nt</I>, the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/<I>f</I> curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/<I>f</I> noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/<I>f</I> model developed is discussed.</P>
Baek, Sangwon,Lee, Junyoung,Park, Iksoo,Baek, Rock-Hyun,Lee, Jeong-Soo Elsevier 2018 Solid-state electronics Vol.140 No.-
<P><B>Abstract</B></P> <P>The spatial position and energy level of the effective oxide trap in SiC DMOSFET were investigated using Trap Spectroscopy by Charge Injection and Sensing (TSCIS) method. It was found that the oxygen vacancy traps at 1.7 eV above from the valence band of SiO<SUB>2</SUB> make threshold voltage (V<SUB>th</SUB>) shift under high negative gate bias stress condition. To further understanding the extracted oxide trap, the repetitive negative stress and recovery test at V<SUB>G</SUB> = ±40 V were executed. The results confirm that V<SUB>th</SUB> and subthreshold swing (SS) change were caused by the process induced pre-existed hole traps instead of the stress induced trap generation. This hole trapping also reduced the Stress Induced Leakage Current (SILC) after the negative bias stress.</P>
Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric
Hyun-Sik Choi,Seung-Ho Hong,Rock-Hyun Baek,Kyong-Taek Lee,Chang-Yong Kang,Jammy, R.,Byoung-Hun Lee,Sung-Woo Jung,Yoon-Ha Jeong IEEE 2009 IEEE electron device letters Vol.30 No.5
<P>Low-frequency noise (LFN) after channel soft oxide breakdown (SBD) of n-MOSFETs with a HfLaSiO gate dielectric and TaN metal gate shows a Lorentzian-like spectrum, which is not observed in HfSiO gate dielectric devices after channel SBD. This is related to the spatial location of the SBD spot. Because La weakens atomic bonding in the interface layer, the SBD spot is generated close to the Si/SiO<SUB>2</SUB> interface. This is verified by using time domain analysis. To examine the property of this Lorentzian-like noise, LFNs after channel SBD are measured repeatedly after arbitrary times. After about 20 h, LFN finally shows an increase only at the low-frequency part of the noise spectrum (f < 1 kHz). These results suggest that the trap distribution after arbitrary times spreads instead of remaining localized. Therefore, the traps or the La-O defect clusters have severe unstable distribution and induce an increase of the localized field, which, in turn, causes the traps to percolate through the high-k dielectric.</P>
Erratum to: Intracellular Substrates of a Heme-Containing Ascorbate Oxidase in Pleurotus ostreatus
Seung-Rock Lee,Woo-Jeong Joo,Yong-Un Baek,Youn-Kyong Lee,Seong-Woon Yu,Yeon-Ran Kim,Kee-Oh Chay,Seung-Hyun Cho,Sa-Ouk Kang 한국미생물학회 2009 The journal of microbiology Vol.47 No.6
In the online version of the article the name of the second corresponding author is misspelled. The correct spelling is Sa-Ouk Kang. The online version of the original article can be found under doi: 10.1007/s12275-008-0307-8
Kyoung Kim, Hyun,Kyoung Kim, Yu,Song, In-Hwan,Baek, Suk-Hwan,Lee, Seung-Rock,Hye Kim, Jung,Kim, Jae-Ryong Gerontological Society of America 2005 Journals of Gerontology. Series A Vol.60 No.1
<P>The signaling pathway of insulin/insulin-like growth factor/phosphatidylinositol-3 kinase/Akt/forkhead transcription factors is known to control life span and senescence in organisms ranging from yeast to mice. The FOXO family of forkhead transcription factors, FOXO1, FOXO3a, and FOXO4, play a critical role in this signal transduction pathway. However, the impact of FOXO3a activation on life span of primary cultured human dermal fibroblasts (HDFs) is unknown. To investigate the role of FOXO3a in the regulation of cellular senescence, we prepared FOXO3a-siRNA stable HDFs. We found that the down-regulation of FOXO3a RNA and protein in HDFs induced many senescent phenotypes, including changes in cell morphology, increases in population doubling times, senescence-associated beta-galactosidase staining and the cellular reactive oxygen species, and up-regulation of p53/p21 protein expression. Our data provide evidence of the key role of FOXO3a transcription factor as a mediator of cellular senescence in HDFs, and suggest that the mechanism of senescence is conserved in HDFs.</P>