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생활체육 참여와 여가생활 실태조사 : 강원도삼척시를중심으로 Be Centered of Sam Chok city in Kang Won Do
崔永雄,柳祿珪,車聖福 三陟大學校 1996 論文集 Vol.29 No.3
The changing mordern society needs Various activities of leisure. Because Industrial Revolution gives us many chance of leisure time. This study was participation of "Spots for all" and research for citizen's leisure life in Sam Chok, are invertigeted from the 289 reguested questionare papers. As the results of this study, following results are attainable. 1. The recognition of "Sports for all" needs the citizens. Because over the half reguests does not know he fine definition of "Sports for all". 2. They prefer individual games to team games, for example, basket ball, soccer, volley ball etc. 3. Their provlem point of participation in "Sports for all" is too long to go to the public sport center. So, for the solution of this problem is capable of use the public school facilities. 4. The firest two purpose of participation in "Sports for all" investigated for thrir health and physical fitness. It represented fresh mind and generousity throught the "Sports for all" is the their first impotant point. 5. The value of leisure evaluated thesame as work. It represented the changing recognition of leisure by peoples. 6. The companion of participation in "Sports for all" represented first, friends, second, families. Theimportent point is they have not same time for each other in a family. 7. Too short of time is the first reason, their incapable of participation in "Sports for all". 8. Most of all their thought on the cost of leisure time for a month are about 50~190 thousand won.
상고(上古) 한글자판(字板)과 신성문자 한글자모의 심층적 의미에 대한 고찰
이재락(Jae-Rock Lee) 한국정신과학학회 2014 한국정신과학회 학술대회 논문집 Vol.2014 No.10
우리나라의 효시가 되는 6천 여 년 전 신시문화의 산물인 남해도 거북바위 위에 새겨진 신시고각의 내용을 해독 하였고, 그 이후 훈민정음 창제에 이르기까지 한글의 역사적인 발전과정을 고찰하였다. 그리고 상고 한글자판을 통한 신성문자 한글자모의 내용이 어떻게 풀이될 수 있는가를 살펴보았고 앞으로의 한글 발전 가능성에 대해 논의하였다. 원래의 신성문자 한글은 상고시대 동 아시아 정신문화의 정화가 결집된 상징 문자체계였다. 후대에 점차 소리글자화 하다가 조선 4대 세종대왕 때에 훈민정음으로 세련된 체계를 갖추게 된 것이다. 원래한글에 내포되어 있던 옛 문화들의 정수를 되 살려 발전시키면 미래세대를 위한 더욱 개량된 새로운 한글체계로의 승화가 가능하다. The meaning of Holy City Culture period(dated to 6,000 years old) old scripture on Turtle rock in Namhae island has been revealed. It has been carved at late stone age by scrubbing the flat stone surface by sharp stone tools during several decades. The historical changes of characters from this old character to recent character has been reviewed. The recent phonographic Korean character system has been revised and established by King Sejong of Chosun dynasty at 1446. In this article the method of how the original symbolic meaning of Korean character’s at ancient time can be interpreted, has been introduced. By the recombination of the ancient heritage, historical background and the recent technological development can realized new and strong modified character system for the next generations.
Rock Bryan B. MATIAS,Guillermo C.BUNGATO Jr 한국유통과학회 2021 The Journal of Asian Finance, Economics and Busine Vol.8 No.12
The study aims to investigate the direct effects of business management practices in terms of financial, marketing, human resources, and logistics operations practices on sales revenue and profitability growth of freight forwarding businesses. A quantitative research design and partial least square–structural equation modeling were used to examine the direct effects of the exogenous and endogenous variables. The study reveals that financial, marketing, and human resources practices have a positive and significant effect on sales revenue growth. Furthermore, marketing and logistics operations have a positive and significant effect on profitability growth in the context of freight forwarding in the Philippines, particularly in its country’s capital. As the current study only examines the direct effects of business management practices, other researchers may also want to consider identifying other variables as mediation and moderation to test other indirect effects on the financial performance of the business. The findings of the study can significantly benefit the freight industry to consider addressing other challenges or make use of the paper to further develop their strategies and practices to improve their financial performance.
Rock-Kil Ko,O-Jong Kwon,Kyu-Jeong Song,Ahmad, D.,Chan Park,Joon-Ho Lee,Seung-Su An,Nam-Jin Lee,Sang-Soo Oh,Young-Cheol Kim Institute of Electrical and Electronics Engineers 2007 IEEE transactions on applied superconductivity Vol.17 No.2
<P>TmBa<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7</SUB> <SUB>-</SUB> <SUB>x</SUB> films which is one of the (Rare earth)Ba<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7</SUB> <SUB>-</SUB> <SUB>x</SUB> high temperature superconductors with small ionic radius of rare earth element, were deposited on STO (100) single crystal substrates and Y<SUB>2</SUB>O<SUB>3</SUB>/YSZ/CeO<SUB>2</SUB> buffered metal substrates by pulsed laser deposition. The J<SUB>c</SUB> (77 K) and the value of onset of Tc TmBCO thin film on STO substrate was 4.5 MA/cm<SUP>2</SUP> and 86 K, respectively. The of J<SUB>c</SUB> TmBCO coated conductor on metal substrate was 1 MA/cm<SUP>2</SUP> . In-field property measurement was carried out at temperatures between 10 K and 77 K in magnetic filed up to 6 T in PPMS system. This is the first report, to the best of our knowledge, of TmBCO thin films and coated conductors with TmBCO film as the superconducting layer which have critical current densities at 77 K of 4.5 MA/ cm<SUP>2</SUP> and 1 MA/cm<SUP>2</SUP> , respectively. The superconducting properties of TmBCO films and the possibility of using TmBCO film as the superconducting layer of the HTS coated conductor, were investigated.</P>
<tex> $C$</tex>– <tex> $V$</tex> Characteristics in Undoped Gate-All-Around Nanowire FET Array
Rock-Hyun Baek,Chang-Ki Baek,Sang-Hyun Lee,Sung Dae Suk,Ming Li,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Jeong-Soo Lee,Kim, D M,Yoon-Ha Jeong IEEE 2011 IEEE electron device letters Vol.32 No.2
<P>Presented in this letter are the <I>C</I>-<I>V</I> data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The <I>C</I>-<I>V</I> curves were examined over a range from accumulation to inversion with varying frequencies and at different electrode configurations. The gate response of the undoped and floating channel is investigated using <I>C</I>-<I>V</I> data, and the inversion charge and carrier mobility are accurately extracted by eliminating the effects of parasitic capacitances and series resistance <I>R</I><SUB>sd</SUB>. These observed data are compared with the data from planar MOS capacitor.</P>
Rock-Kil Ko,Sung-Hwan Bae,Myung-Jin Jung,Se-Hoon Jang,Kyu-Jeong Song,Chan Park,Myung-Hwan Sohn,Suk-ill Kang,Sang-Soo Oh,Dong-woo Ha,Hong-Soo Ha,Ho-Sup Kim,Young-Cheol Kim IEEE 2009 IEEE transactions on applied superconductivity Vol.19 No.3
<P>In order to investigate the possibility of using mixed rare earth (Nd<SUB>1/3</SUB>Eu<SUB>1/3</SUB>Gd<SUB>1/3</SUB>)Ba<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7-x</SUB> (NEG123) as the superconducting layer of the HTS coated conductor, the NEG123 thin film was deposited epitaxially on LAO(100) single crystal and IBAD_YSZ metal templates by pulsed laser deposition. Systematic studies were carried out to investigate the influences of deposition parameters of PLD on the microstructure, texture and superconducting properties of NEG-123 coated conductor. Deposition at oxygen partial pressure of 600 mTorr was needed to routinely obtain high quality NEG123 films with J<SUB>C</SUB>'s (77 K) over 2 MA/cm<SUP>2</SUP> and Tc's over 90 K (DeltaT ~ 2 K) . We verified from magnetization study that the NEG123 has an improved in-field Jc as the field increases at temperatures between 10 K and 77 K compared with Gd123. The J<SUB>C</SUB> (77 K, self field) and the value of onset T<SUB>C</SUB> of NEG123 thin film on LAO substrate was 4.0 MA/cm<SUP>2</SUP> and 92 K, respectively. This is the first report, to the best of our knowledge, of coated conductors with NEG123 film as the superconducting layer which have Ic and Jc over 40 A/cm-width and 1.6 MA/cm<SUP>2</SUP> at 77 K, self field. This study shows the possibility of using NEG123 film as the superconducting layer of the HTS coated conductor which can be used in high magnetic field power electric devices.</P>
Rock-Hyun Baek,Chang-Ki Baek,Hyun-Sik Choi,Jeong-Soo Lee,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Kinam Kim,Kim, D M,Yoon-Ha Jeong IEEE 2011 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.10 No.3
<P>In this paper, the volume trap densities <I>Nt</I> are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting <I>Nt</I>, the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/<I>f</I> curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/<I>f</I> noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/<I>f</I> model developed is discussed.</P>
Rock-Hyun Baek,Chang-Ki Baek,Sung-Woo Jung,Yun Young Yeoh,Dong-Won Kim,Jeong-Soo Lee,Kim, D.M.,Yoon-Ha Jeong IEEE 2010 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.9 No.2
<P>The series resistance, <I>R</I> <SUB>sd</SUB> in silicon nanowire FETs (Si-NWFET) is extracted unambiguously, using the <I>Y</I> -function technique, in conjunction with the drain current and transconductance data. The volume channel inversion in Si-NWFET renders the charge carriers relatively free of the surface scattering and concomitant degradation of mobility. As a result, the <I>Y</I> -function of Si-NWFET is shown to exhibit a linear behavior in strong inversion, thereby enabling accurate extraction of <I>R</I> <SUB>sd</SUB>. The technique is applied to nanowire devices with channel lengths 82, 86, 96, 106, 132, and 164 nm, respectively. The extracted <I>R</I> <SUB>sd</SUB> values are shown nearly flat with respect to the gate voltage, as expected from Ohmic contacts but showed a large variation for all channel lengths examined. This indicates the process parameters involved in the formation of series contacts vary considerably from device to device. The present method only requires a single device for extraction of <I>R</I> <SUB>sd</SUB> and the iteration procedure for data fitting is fast and stable.</P>