http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Insulating phases of vanadium dioxide are Mott-Hubbard insulators
Huffman, T. J.,Hendriks, C.,Walter, E. J.,Yoon, Joonseok,Ju, Honglyoul,Smith, R.,Carr, G. L.,Krakauer, H.,Qazilbash, M. M. American Physical Society 2017 Physical Review B Vol.95 No.7
<P>We present comprehensive broadband optical spectroscopy data on two insulating phases of vanadium dioxide (VO2): monoclinic M-2 and triclinic. The main result of our work is that the energy gap and the electronic structure are essentially unaltered by the first-order structural phase transition between the M-2 and triclinic phases. Moreover, the optical interband features in the M-2 and triclinic phases are remarkably similar to those observed in the well-studied monoclinic M-1 insulating phase of VO2. As the energy gap is insensitive to the different lattice structures of the three insulating phases, we rule out vanadium-vanadium pairing (the Peierls component) as the dominant contributor to the opening of the gap. Rather, the energy gap arises primarily from intra-atomic Coulomb correlations.</P>
Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide
Qazilbash, M. M.,Brehm, M.,Andreev, G. O.,Frenzel, A.,Ho, P.-C.,Chae, Byung-Gyu,Kim, Bong-Jun,Yun, Sun Jin,Kim, Hyun-Tak,Balatsky, A. V.,Shpyrko, O. G.,Maple, M. B.,Keilmann, F.,Basov, D. N. American Physical Society 2009 Physical review. B, Condensed matter and materials Vol.79 No.7
Inhomogeneous electronic state near the insulator-to-metal transition in the correlated oxideVO2
Frenzel, A.,Qazilbash, M. M.,Brehm, M.,Chae, Byung-Gyu,Kim, Bong-Jun,Kim, Hyun-Tak,Balatsky, A. V.,Keilmann, F.,Basov, D. N. American Physical Society 2009 Physical review. B, Condensed matter and materials Vol.80 No.11
Electronic and optical properties of strain-locked metallic Ti2O3 films
Lahneman D.J.,Kim H.,Jiang H.,Mathews S.A.,Lock E.,Prestigiacomo J.,Qazilbash M.M.,Rohde C.,Piqué A. 한국물리학회 2023 Current Applied Physics Vol.47 No.-
We successfully grow corundum structured Ti2O3 films on c-plane sapphire substrates using pulsed laser deposition. Temperature dependent resistivity measurements show that a metal to insulator transition (MIT) is suppressed, showing conducting behavior at all temperatures. Samples still show an increase in resistivity as temperature is decreased, a characteristic indicative of a semiconducting phase. Our films exhibit grain size on the order of 30 nm which induce a strain consistent with nanoparticle Ti2O3 showing a (c/a) ratio of 2.7. The imposed strain causes an increase in the c-axis length as the temperature is decreased, and thereby suppresses the transition to an insulating phase. Our optical data agrees with this result, showing the lack of a band gap and the electronic structure consistent with bulk high temperature metallic Ti2O3 with the a1g - eπg interband transition shifted down to 0.7 eV from its bulk insulating value of ~1 eV.