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Electronic and optical properties of strain-locked metallic Ti2O3 films
Lahneman D.J.,Kim H.,Jiang H.,Mathews S.A.,Lock E.,Prestigiacomo J.,Qazilbash M.M.,Rohde C.,Piqué A. 한국물리학회 2023 Current Applied Physics Vol.47 No.-
We successfully grow corundum structured Ti2O3 films on c-plane sapphire substrates using pulsed laser deposition. Temperature dependent resistivity measurements show that a metal to insulator transition (MIT) is suppressed, showing conducting behavior at all temperatures. Samples still show an increase in resistivity as temperature is decreased, a characteristic indicative of a semiconducting phase. Our films exhibit grain size on the order of 30 nm which induce a strain consistent with nanoparticle Ti2O3 showing a (c/a) ratio of 2.7. The imposed strain causes an increase in the c-axis length as the temperature is decreased, and thereby suppresses the transition to an insulating phase. Our optical data agrees with this result, showing the lack of a band gap and the electronic structure consistent with bulk high temperature metallic Ti2O3 with the a1g - eπg interband transition shifted down to 0.7 eV from its bulk insulating value of ~1 eV.
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