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      • SCIESCOPUSKCI등재

        True Digestibility of Phosphorus in Different Resources of Feed Ingredients in Growing Pigs

        Wu, X.,Ruan, Z.,Zhang, Y.G.,Hou, Y.Q.,Yin, Y.L.,Li, T.J.,Huang, R.L.,Chu, W.Y.,Kong, X.F.,Gao, B.,Chen, L.X. Asian Australasian Association of Animal Productio 2008 Animal Bioscience Vol.21 No.1

        To determine the true digestible phosphorus (TDP) requirement of growing pigs, two experiments were designed with the experimental diets containing five true digestible P levels (0.16%, 0.20%, 0.23%, 0.26% and 0.39%) and the ratio of total calcium to true digestible P (TDP) kept at 2:1. In Experiment 1, five barrows (Duroc${\times}$Landrace${\times}$Yorkshire) with an average initial body weight of 27.9 kg were used in a $5{\times}5$ Latin-square design to evaluate the effect of different dietary P levels on the digestibility and output of P and nitrogen. In Experiment 2, sixty healthy growing pigs (Duroc${\times}$Landrace${\times}$Yorkshire) with an average body weight (BW) of 21.4 kg were assigned randomly to one of the five dietary treatments (12 pigs/diet), and were used to determine the true digestible phosphorus (TDP) requirement of growing pigs on the basis of growth performance and serum biochemical indices. The results indicated that the true digestibility of P increased (p<0.05) linearly with increasing dietary TDP level below 0.26%. The true P digestibility was highest (56.6%) when dietary TDP was 0.34%. Expressed as g/kg dry matter intake (DMI), fecal P output increased (p<0.05) linearly with increasing P input. On the basis of g/kg fecal dry matter (DM), fecal P output was lowest for Diet 4 and highest (p<0.05) for Diet 5. The apparent digestibility of crude protein (CP) did not differ (p>0.05) among the five diets, with the average nitrogen output of 12.14 g/d and nitrogen retention of 66% to 74% (p>0.05), which suggested that there was no interaction between dietary P and CP protein levels. During the 28-d experimental period of Experiment 2, the average daily gain (ADG) of pigs was affected by dietary TDP levels as described by Eq. (1): $y=-809,532x^4+788,079x^3-276,250x^2+42,114x-1,759$; ($R^2=0.99$; p<0.01; y = ADG, g/d; x = dietary TDP, %), F/G for pigs by Eq. (2): $y=3,651.1x^4-3,480.4x^3+1,183.8x^2-172.5x+10.9$ ($R^2=0.99$; p<0.01; y = F/G; x = dietary TDP, %), and Total P concentrations in serum by Eq. (3): $y=-3,311.7x^4+3,342.7x^3-1,224.6x^2+195.6x-8.7$ (R2 = 0.99; p<0.01; y = total serum P concentration and x = dietary TDP, %). The highest ADG (782 g/d), the lowest F/G (1.07) and the highest total serum P concentration (3.1 mmol/L) were obtained when dietary TDP level was 0.34%. Collectively, these results indicate that the optimal TDP requirement of growing pigs is 0.34% of the diet at a total Ca to TDP ratio of 2:1.

      • KCI등재후보

        ENHANCEMENT OF THERMOELECTRIC POWER FACTOR BY A SILICON SPACER IN MODULATION-DOPED Si-HMS-Si

        Q. R. HOU,B. F. GU,Y. B. CHEN,Y. J. HE 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2011 NANO Vol.6 No.5

        The introduction of an un-doped silicon layer (spacer) enhances significantly the thermoelectric power factor in modulation-doped Si(Al)-MnSi_(1.7)-Si(Al) sandwich structure. This un-doped silicon layer is inserted between the MnSi_(1.7) (HMS) and Al-doped silicon layers. With a proper spacer thickness, the electrical resistivity decreases sharply and is weakly dependent on temperature from 300 K to 683 K. As a result, the thermoelectric power factor can reach 0.973 × 10^(-3) W/m-K^2 at 683 K, which is about ten times larger than that of an ordinary MnSi_(1.7) film without modulation doping.

      • KCI등재후보

        PREPARATION OF NANOCRYSTALLINE SILICON CARBIDE FILMS WITH HIGH SEEBECK COEFFICIENT AND LOW RESISTIVITY

        Q. R. HOU,B. F. GU,Y. B. CHEN 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2011 NANO Vol.6 No.2

        Nanocrystalline silicon carbide (SiC) thin films with 5 ~ 10 nm grain size, large Seebeck coefficient (-0.393 mV/K), and low electrical resistivity (3.2 ×10-4 Ohm-m) have been successfully prepared on oxidized silicon substrates by magnetron sputtering of SiC and Al targets. It was found that the addition of a small amount of Al into the SiC film, the high deposition temperature (760 K), and the high thermal annealing temperature (1063 K) were necessary to achieve the goal. The Seebeck coefficient versus logarithm of temperature in the temperature range 383 K to 533 K was a straight line with a slope of -0.999 mV/K. The value of 0.999 mV/K is much larger than the theoretical value of 0.129 mV/K for conventional semiconductors.

      • Improvement of Pulp Handsheet Strength Properties by Polylactic Acids

        Q.X. Hou,X.S. Chai,R. Yang,A.J. Ragauskas 한국펄프·종이공학회 2006 한국펄프종이학회 기타 간행물 Vol.- No.-

        Polylactic acids polymer (PLA) was applied as an additive to improve the strength properties of handsheets prepared from three unbleached southern pine kraft pulps with different kappa number and an aspen bleached chemithermomechanical pulp (BCTMP). The results showed that PLA could greatly improve the tensile and burst strength of the pulp handsheets. Heat pressing effect was also important to enhance the strength properties. For unbleached kraft pulps, it was found that an appropriate amount of residual lignin in pulps had a positive effect on the handsheets strength improvement when adding PLA. The thickness of the handsheet did not change the PLA strengthening effect. In general, PLA effect on tear strength improvement could be neglected. However, it had a significant effect on the improvement of tear strength for the aspen BCTMP handsheets not containing sufficient amount of fines.

      • KCI등재후보

        Short-circuiting in fullerene devices studied by in situ electrical measurement in high vacuum and infrared imaging analysis?

        H.R. Wu,M.L. Wang,Q.L. Song,Y. Wu,Z.T. Xie,X.D. Gao,X.M. Ding,X.Y. Hou 한국물리학회 2007 Current Applied Physics Vol.7 No.3

        In the present work, currentvoltage (IV) characteristics of fullerene devices (ITOnC60nAl) are reexamined byin situelectrical mea-surement in high vacuum and by infrared imaging analysis. Two kinds ofIV curves are detected: ‘ohmic’ and nonohmic. Degradationprocesses of the two dierent devices are measured, and ‘ohmic’ degradation processes are ascribed to short-circuiting. ITOnC60nAldevices in high vacuum are conrmed to be intrinsically nonohmic. Surface temperature distribution of the two dierent devices is mea-buers are inserted between fullerene layer and cathode and this is found to be eective.

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