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Evans, D. F.,Southworth, J.,Smalley, B.,Jørgensen, U. G.,Dominik, M.,Andersen, M. I.,Bozza, V.,Bramich, D. M.,Burgdorf, M. J.,Ciceri, S.,D’Ago, G.,Figuera Jaimes, R.,Gu, S.-H.,Hinse, T. C.,Henning, Th Springer-Verlag 2018 Astronomy and astrophysics Vol.610 No.-
<P><I>Context.</I> The formation and dynamical history of hot Jupiters is currently debated, with wide stellar binaries having been suggested as a potential formation pathway. Additionally, contaminating light from both binary companions and unassociated stars can significantly bias the results of planet characterisation studies, but can be corrected for if the properties of the contaminating star are known.</P><P><I>Aim.</I> We search for binary companions to known transiting exoplanet host stars, in order to determine the multiplicity properties of hot Jupiter host stars. We also search for and characterise unassociated stars along the line of sight, allowing photometric and spectroscopic observations of the planetary system to be corrected for contaminating light.</P><P><I>Methods.</I> We analyse lucky imaging observations of 97 Southern hemisphere exoplanet host stars, using the Two Colour Instrument on the Danish 1.54 m telescope. For each detected companion star, we determine flux ratios relative to the planet host star in two passbands, and measure the relative position of the companion. The probability of each companion being physically associated was determined using our two-colour photometry.</P><P><I>Results.</I> A catalogue of close companion stars is presented, including flux ratios, position measurements, and estimated companion star temperature. For companions that are potential binary companions, we review archival and catalogue data for further evidence. For WASP-77AB and WASP-85AB, we combine our data with historical measurements to determine the binary orbits, showing them to be moderately eccentric and inclined to the line of sight (and hence planetary orbital axis). Combining our survey with the similar Friends of Hot Jupiters survey, we conclude that known hot Jupiter host stars show a deficit of high mass stellar companions compared to the field star population; however, this may be a result of the biases in detection and target selection by ground-based surveys.</P>
TYROSINASE BIOSENSOR BASED ON ZINC OXIDE NANORODS
L. Y. CHEN,B. X. GU,G. P. ZHU,Y. F. WU,S. Q. LIU,C. X. XU 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2007 NANO Vol.2 No.5
A phenol biosensor based on the skillful immobilization of tyrosinase on zinc oxide (ZnO) nanorods was proposed. The ZnO nanorods fabricated by a simple vapor-phase transport method possess a high aspect ratio, good electron communication, chemical purity, smooth and positive charged surface and are ready for immobilization of biochemicals with low isoelectric point (IEP). Electrochemical measurement and Scanning Electron Microscopic (SEM) analysis showed that the enzyme of tyrosinase with IEP 4.5 can be adsorbed on the surface of ZnO nanorods and kept its bioactivity of the oxidation of phenol to a large extent. This led us to develop phenol biosensor with good stability and reproducibility. The proposed method creates a new way to develop biosensors using nanostructured materials with high IEP.
Q. R. HOU,B. F. GU,Y. B. CHEN 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2011 NANO Vol.6 No.2
Nanocrystalline silicon carbide (SiC) thin films with 5 ~ 10 nm grain size, large Seebeck coefficient (-0.393 mV/K), and low electrical resistivity (3.2 ×10-4 Ohm-m) have been successfully prepared on oxidized silicon substrates by magnetron sputtering of SiC and Al targets. It was found that the addition of a small amount of Al into the SiC film, the high deposition temperature (760 K), and the high thermal annealing temperature (1063 K) were necessary to achieve the goal. The Seebeck coefficient versus logarithm of temperature in the temperature range 383 K to 533 K was a straight line with a slope of -0.999 mV/K. The value of 0.999 mV/K is much larger than the theoretical value of 0.129 mV/K for conventional semiconductors.
ENHANCEMENT OF THERMOELECTRIC POWER FACTOR BY A SILICON SPACER IN MODULATION-DOPED Si-HMS-Si
Q. R. HOU,B. F. GU,Y. B. CHEN,Y. J. HE 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2011 NANO Vol.6 No.5
The introduction of an un-doped silicon layer (spacer) enhances significantly the thermoelectric power factor in modulation-doped Si(Al)-MnSi_(1.7)-Si(Al) sandwich structure. This un-doped silicon layer is inserted between the MnSi_(1.7) (HMS) and Al-doped silicon layers. With a proper spacer thickness, the electrical resistivity decreases sharply and is weakly dependent on temperature from 300 K to 683 K. As a result, the thermoelectric power factor can reach 0.973 × 10^(-3) W/m-K^2 at 683 K, which is about ten times larger than that of an ordinary MnSi_(1.7) film without modulation doping.
L. P. Zhu,X. Q. Gu,H. P. He,F. Huang,M. X. Qiu,Z. Z. Ye,Y. Z. Zhang,B. H. Zhao 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
A ZnO/Zn0.85Mg0.15O single quantum well (SQW) was fabricated on a Si(111) substrate by using a pulsed laser deposition (PLD) technique. Photoluminescence (PL) measurements were carried out in the range of 10 − 290 K in order to investigate the mechanism of carrier dynamics. At 10 K, the sample exhibited two predominant ultraviolet emissions, one at 3.57 eV and the other at 3.38 eV, which were attributed to recombinations of localized excitons (LE band) in the barrier and the well layers, respectively. The quantum well emission showed a blue shift of nearly 20 meV with respect to the epitaxial ZnO films. We also observed that the carrier localization resulted in an “S-shaped” red-blue-red shift of the ∽3.38 eV emission with increasing temperature. A ZnO/Zn0.85Mg0.15O single quantum well (SQW) was fabricated on a Si(111) substrate by using a pulsed laser deposition (PLD) technique. Photoluminescence (PL) measurements were carried out in the range of 10 − 290 K in order to investigate the mechanism of carrier dynamics. At 10 K, the sample exhibited two predominant ultraviolet emissions, one at 3.57 eV and the other at 3.38 eV, which were attributed to recombinations of localized excitons (LE band) in the barrier and the well layers, respectively. The quantum well emission showed a blue shift of nearly 20 meV with respect to the epitaxial ZnO films. We also observed that the carrier localization resulted in an “S-shaped” red-blue-red shift of the ∽3.38 eV emission with increasing temperature.
Y. Yuan,Z. H. Zhong,Z.S. Yu,H. F. Yin,Y. Y. Dang,X. B. Zhao,Z. Yang,J. T. Lu,J. B. Yan,Y. Gu 대한금속·재료학회 2015 METALS AND MATERIALS International Vol.21 No.4
A new Ni-Fe-based superalloy, HT-X, has been developed for applications in 700 °C advanced ultra-supercritical (A-USC) boilers. The HT-X alloy is subjected to various heat treatments. Tensile tests are conducted at room temperature (RT), 700 °C and 750 °C. Creep tests are carried out under conditions of 700 °C/300 MPa and 750 °C/150 MPa. After aging treatment, the yield strength of the HT-X alloy at RT and 750 °C is 787 MPa and 624 MPa, respectively. When additional thermal exposure at 750 °C for 5400 h is applied, the yield strength is decreased to 656 MPa at RT and 480 MPa at 700 °C. For an aged specimen, the a/2<110> dislocation shearing process occurs when tensile testing is conducted at RT and 750 °C. As the γ' precipitate size increases in the specimen that is thermally exposed at 750 °C for 5400 h, Orowan bowing is the dominant dislocation process, and stacking faults develop in the γ' precipitates at both RT and 700 °C. Dislocation slip combined with climb is the dominant mechanism under the creep testing conditions. The factors that affect the mechanical properties and deformation mechanisms are discussed.