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Park, Sungeun,Park, Hyomin,Kim, Dongseop,Yang, JungYup,Lee, Dongho,Kim, Young-Su,Kim, Hyun-Jong,Suh, Dongchul,Min, Byoung Koun,Kim, Kyung Nam,Park, Se Jin,Kim, Donghwan,Lee, Hae-Seok,Nam, Junggyu,Kang Springer-Verlag 2018 METALS AND MATERIALS International Vol.24 No.3
<P>Passivated emitter and rear contact (PERC) is a promising technology owing to high efficiency can be achieved with p-type wafer and their easily applicable to existing lines. In case of using p-type mono wafer, 0.5-1% efficiency increase is expected with PERC technologies compared to existing Al BSF solar cells, while for multi-wafer solar cells it is 0.5-0.8%. We addressed the optimization of PERC solar cells using the Al paste. The paste was prepared from the aluminum-silicon alloy with eutectic composition to avoid the formation of voids that degrade the open-circuit voltage. The glass frit of the paste was changed to improve adhesion. Scanning electron microscopy revealed voids and local back surface field between the aluminum electrode and silicon base. We confirmed the conditions on the SiNx passivation layer for achieving higher efficiency and better adhesion for long-term stability. The cell characteristics were compared across cells containing different pastes. PERC solar cells with the Al/Si eutectic paste exhibited the efficiency of 19.6%.</P>
Rapid and Accurate Measurement of Ideality Factor and Parasitic Resistances of Thin Film Solar Cells
Park, Sungeun,Kim, Soo Min,Park, Se Jin,Bae, Soohyun,Park, Hyomin,Nam, Jung gyu,Lee, Dongho,Yang, Jung Yup,Kim, Dong Seop,Mo, Chanbin,Kim, Young-Su,Kim, Jihyun,Lee, Hae-Seok,Kang, Yoonmook The Electrochemical Society 2018 ECS journal of solid state science and technology Vol.7 No.6
<P>The sunshade method for the measurement of the ideality factor and resistances of solar cells is commonly used in silicon solar cells. However, the method is rarely employed for thin-film solar cells. In this paper, the sunshade method is applied to CIGS solar cells, and it is shown that the three major assumptions of the method remain valid for CIGS solar cells. The extracted parameters are compared to those calculated using other common methods, and the ideality factors and R-s values are quickly determined and found to be nearly the same as those extracted through illuminated I-V fitting and dark I-V fitting. (C) 2018 The Electrochemical Society.</P>
레이져를 이용한 도핑 특성과 선택적 도핑 에미터 실리콘 태양전지의 제작
박성은(Sungeun Park),박효민(Hyomin Park),남정규(Junggyu Nam),양정엽(JungYup Yang),이동호(Dongho Lee),민병권(Byoung Koun Min),김경남(Kyung Nam Kim),박세진(Se Jin Park),이해석(Hae-Seok Lee),김동환(Donghwan Kim),강윤묵(Yoonmook Kang),김동 한국태양광발전학회 2016 Current Photovoltaic Research Vol.4 No.2
Laser-doped selective emitter process requires dopant source deposition, spin-on-glass, and is able to form selective emitter through SiNx layer by laser irradiation on desired locations. However, after laser doping process, the remaining dopant layer needs to be washed out. Laser-induced melting of pre-deposited impurity doping is a precise selective doping method minimizing addition of process steps. In this study, we introduce a novel scheme for fabricating highly efficient selective emitter solar cell by laser doping. During this process, laser induced damage induces front contact destabilization due to the hindrance of silver nucleation even though laser doping has a potential of commercialization with simple process concept. When the laser induced damage is effectively removed using solution etch back process, the disadvantage of laser doping was effectively removed. The devices fabricated using laser doping scheme power conversion efficiency was significantly improved about 1% abs. after removal the laser damages.
The Art Therapy Experiences of Patients and Their Family Members in Hospice Palliative Care
Park, Sungeun,Song, Hyunjoo Korean Society for Hospice and Palliative Care 2020 한국호스피스.완화의료학회지 Vol.23 No.4
Purpose: In this study, the researchers closely investigated the psychosocial problems faced by terminal cancer patients and their family members in hospice palliative care units. Methods: The investigators conducted four sessions of art therapy intervention programs for the terminal cancer patients and their family members, carried out in-depth interviews about the influence of the cancer experience on their family function and quality of life, and analyzed their experiences using grounded theory methodology. Results: After providing autonomous written informed consent, six pairs of terminally ill cancer patients and their family members, accounting for a total of 17 participants with the inclusion of additional family members who took part sporadically, took part in the art therapy intervention and interviews. The raw data, in the form of verbatim records, were analyzed according to the procedures of grounded theory (open, axial, and selective coding). Through these processes, a total of 154 concepts, 56 subcategories, and 13 categories were identified. Families were classified into four types according to their family function, quality of life, and attitude toward death. Though the art therapy intervention, patients and their family members experienced three stages over time. Conclusion: This research focused on essential aspects of the family relationships and the art therapy experiences of terminal cancer patients and their family members through an art therapy intervention in the context of hospice palliative care. Based on these observations, the researchers constructed a theoretical rationale for art therapy interventions delivered to patients and their family members in the process of hospice palliative care.
Effects of Rapid Thermal Process on the Junction Properties of Aluminum Rear Emitter Solar Cells
Sungeun Park,Young Do Kim,Soohyun Bae,Seongtak Kim,Jooyong Song,Hyunho Kim,Hyo Min Park,Soomin Kim,탁성주,김동환 대한금속·재료학회 2012 METALS AND MATERIALS International Vol.18 No.4
N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.
Park, Sungeun,Park, Hyomin,Kang, Yoonmook,Lee, Hae-Seok,Kim, Donghwan Elsevier 2016 CURRENT APPLIED PHYSICS Vol.16 No.9
<P>The purpose of this work is to investigate a back surface field (BSF) at a number of wafer resistivities for industrial crystalline silicon solar cells. As indicated in this manuscript, doping a crucible-grown Czochralski (Cz)-Si ingot with Ga offers a sure way of eliminating light-induced degradation (LID) because LID is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation in the Ga-doped Cz-Si ingot. This resistivity variation in a Cz-Si wafer at different locations varies the performance, as is already known. In the light of a B-doped wafer, we made wider resistivity in Si ingot; we investigated how resistivities affect the solar cell performance as a function of BSF quality. (C) 2016 Elsevier B.V. All rights reserved.</P>
Sungeun Park,Hyo Min Park,Yoonmook Kang,Hae-Seok Lee,Donghwan Kim 한국물리학회 2016 Current Applied Physics Vol.16 No.9
The purpose of this work is to investigate a back surface field (BSF) at a number of wafer resistivities for industrial crystalline silicon solar cells. As indicated in this manuscript, doping a crucible-grown Czochralski (Cz)-Si ingot with Ga offers a sure way of eliminating light-induced degradation (LID) because LID is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation in the Ga-doped Cz-Si ingot. This resistivity variation in a Cz-Si wafer at different locations varies the performance, as is already known. In the light of a B-doped wafer, we made wider resistivity in Si ingot; we investigated how resistivities affect the solar cell performance as a function of BSF quality.
Park Sungeun,Lee Jeong Min,Park Junghoan,Lee Jihyuk,Bae Jae Seok,Kim Jae Hyun,Joo Ijin 대한영상의학회 2021 Korean Journal of Radiology Vol.22 No.11
Objective: To determine whether volumetric CT texture analysis (CTTA) using fully automatic tumor segmentation can help predict recurrence-free survival (RFS) in patients with intrahepatic mass-forming cholangiocarcinomas (IMCCs) after surgical resection. Materials and Methods: This retrospective study analyzed the preoperative CT scans of 89 patients with IMCCs (64 male; 25 female; mean age, 62.1 years; range, 38–78 years) who underwent surgical resection between January 2005 and December 2016. Volumetric CTTA of IMCCs was performed in late arterial phase images using both fully automatic and semi-automatic liver tumor segmentation techniques. The time spent on segmentation and texture analysis was compared, and the first-order and second-order texture parameters and shape features were extracted. The reliability of CTTA parameters between the techniques was evaluated using intraclass correlation coefficients (ICCs). Intra- and interobserver reproducibility of volumetric CTTAs were also obtained using ICCs. Cox proportional hazard regression were used to predict RFS using CTTA parameters and clinicopathological parameters. Results: The time spent on fully automatic tumor segmentation and CTTA was significantly shorter than that for semiautomatic segmentation: mean ± standard deviation of 1 minutes 37 seconds ± 50 seconds vs. 10 minutes 48 seconds ± 13 minutes 44 seconds (p < 0.001). ICCs of the texture features between the two techniques ranged from 0.215 to 0.980. ICCs for the intraobserver and interobserver reproducibility using fully automatic segmentation were 0.601–0.997 and 0.177– 0.984, respectively. Multivariable analysis identified lower first-order mean (hazard ratio [HR], 0.982; p = 0.010), larger pathologic tumor size (HR, 1.171; p < 0.001), and positive lymph node involvement (HR, 2.193; p = 0.014) as significant parameters for shorter RFS using fully automatic segmentation. Conclusion: Volumetric CTTA parameters obtained using fully automatic segmentation could be utilized as prognostic markers in patients with IMCC, with comparable reproducibility in significantly less time compared with semi-automatic segmentation.
Park, Hyomin,Park, Sungeun,Lee, Seunghun,Kang, Yoonmook,Lee, Hae-Seok,Kim, Donghwan American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.10
<P>In this study, the effect of acceleration voltage on emitter properties was investigated. Phosphorus ion was implanted into a silicon substrate at acceleration voltages of 7, 13, and 20 KeV. As the acceleration voltage increased, the amorphous layer thickness increased from 14 to 33 nm. The projected ranges were around 10 to 13 nm, and little change was observed with the acceleration voltage. The as-implanted phosphorus concentrations as well as the junction depth were higher for higher acceleration voltages. As the phosphorus acceleration voltage increased, a larger and rougher area of contrast was observed at the amorphous/crystalline interface. After thermal treatment at 750 degrees C, strains were observed by high-resolution X-ray diffraction for all acceleration conditions. It was observed that a higher acceleration voltage resulted in a higher intensity of rocking curves with more fringes. Sheet resistances decreased rapidly after thermal treatment above 850 degrees C. The sheet resistance decreased with increasing annealing temperature, while at every temperature, the sample at 7 KeV acceleration voltage showed a higher sheet resistance than the samples at 13 and 20 KeV. The mobility increased for temperatures up to 850 degrees C but the carrier concentrations showed little change. Above 850 degrees C, the mobility did not show much change, but the carrier concentration increased. It is considered that the dopant activation was highly affected by the carrier concentration and not by the mobility.</P>