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박성은(Sungeun Park),박효민(Hyomin Park),남정규(Junggyu Nam),양정엽(JungYup Yang),이동호(Dongho Lee),민병권(Byoung Koun Min),김경남(Kyung Nam Kim),박세진(Se Jin Park),이해석(Hae-Seok Lee),김동환(Donghwan Kim),강윤묵(Yoonmook Kang),김동 한국태양광발전학회 2016 Current Photovoltaic Research Vol.4 No.2
Laser-doped selective emitter process requires dopant source deposition, spin-on-glass, and is able to form selective emitter through SiNx layer by laser irradiation on desired locations. However, after laser doping process, the remaining dopant layer needs to be washed out. Laser-induced melting of pre-deposited impurity doping is a precise selective doping method minimizing addition of process steps. In this study, we introduce a novel scheme for fabricating highly efficient selective emitter solar cell by laser doping. During this process, laser induced damage induces front contact destabilization due to the hindrance of silver nucleation even though laser doping has a potential of commercialization with simple process concept. When the laser induced damage is effectively removed using solution etch back process, the disadvantage of laser doping was effectively removed. The devices fabricated using laser doping scheme power conversion efficiency was significantly improved about 1% abs. after removal the laser damages.