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Navamathavan, R.,Ra, Yong-Ho,Song, Ki-Young,Kim, Dong-Wook,Lee, Cheul-Ro Elsevier 2011 CURRENT APPLIED PHYSICS Vol.11 No.1
<P><B>Abstract</B></P><P>Gallium nitride (GaN) nanowire (NW) arrays were grown on a gold-coated Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). Here we adopted two different experimental procedures to grow GaN NWs namely, with and without Ga predeposition on Au-coated Si(111) substrate before annealing. Comparative studies based on the morphology and growth behavior of GaN NWs were performed by using Au catalyst and Au + Ga solid solution nano-droplets. The grown GaN NWs were characterized by field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray (EDX) spectroscopy, photoluminescence (PL), cathodoluminescence (CL), high-resolution transmission electron microscopy (HR-TEM) and Raman spectroscopy. The nucleation of GaN NWs was explained in terms of Ga predeposition. As a result, we showed that the advantages of using the Au + Ga solid solution nano-droplets for growing GaN NWs.</P>
R. Navamathavan,김창영,최치규,Heon Ju Lee 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5
We report on the electrical conduction of as-deposited and annealed SiOC(-H) films deposited by using plasma enhanced chemical vapor deposition (PECVD). The leakage current density was reduced to a low value of 3.02 × 10−8 A/cm2 for the film annealed at 400 ˚C. Both Schottky and Poole-Frenkel emissions were observed to occur in all SiOC(-H) films deposited at different flow rate ratios. However, both emissions were found to be more dominant with increasing flow rate ratio, which may be due to the lower surface state density with increasing flow rate ratio. Furthermore, annealing of the SiOC(-H) film significantly enhanced the electrical properties. The leakage current density was reduced by about one order and the breakdown strength was increased from 1.61 for the as-deposited sample and to 2.81 MV/cm for sample annealed at 400 ˚C for a flow rate ratio of 90 %. The value of the dielectric constant calculated from the I-V plots was consistent with that calculated from the C-V measurements. We report on the electrical conduction of as-deposited and annealed SiOC(-H) films deposited by using plasma enhanced chemical vapor deposition (PECVD). The leakage current density was reduced to a low value of 3.02 × 10−8 A/cm2 for the film annealed at 400 ˚C. Both Schottky and Poole-Frenkel emissions were observed to occur in all SiOC(-H) films deposited at different flow rate ratios. However, both emissions were found to be more dominant with increasing flow rate ratio, which may be due to the lower surface state density with increasing flow rate ratio. Furthermore, annealing of the SiOC(-H) film significantly enhanced the electrical properties. The leakage current density was reduced by about one order and the breakdown strength was increased from 1.61 for the as-deposited sample and to 2.81 MV/cm for sample annealed at 400 ˚C for a flow rate ratio of 90 %. The value of the dielectric constant calculated from the I-V plots was consistent with that calculated from the C-V measurements.
Preparation and Properties of Low-dielectric-constant SiOC(-H) Thin Films Deposited by Using PECVD
R. Navamathavan,이철로,R. Nirmala,김창영,Chi Kyu Choi 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.3
Low-dielectric-constant SiOC(-H) films were deposited on p-type Si(100) substrates by using plasma enhanced chemical vapor deposition (PECVD) with methyltriethoxysilane (MTES) and oxygen gas as the precursors. The SiOC(-H) films were deposited at various substrate temperatures while all the other experimental parameters were kept constant. The SiOC(-H) film’s properties,such as the deposition rate, refractive index, thickness, current-voltage (C-V) characteristics and the dielectric constant, were evaluated. The deposition rate decreased with increasing substrate temperature. The activation energies of the SiOC(-H) films were found to be -0.036 and -0.021 eV,for lower substrate temperature (RT - 200 C) and higher substrate temperature (beyond 200 C),respectively. When the substrate temperature was increased, the precursor molecules dissociated completely due to a breaking of the cage structures (voids), resulting in the formation of denser SiOC(-H) films. The dielectric constant of the SiOC(-H) film increased from 2.53 to 2.96 with increasing substrate temperature from RT to 350 ℃.
Rangaswamy Navamathavan,Chang Young Kim,An Soo Jung,Chi Kyu Choi,이헌주 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Low-dielectric-constant SiOC(-H) thin films were deposited on p-type Si(100) substrates by using plasma enhanced chemical vapor deposition (PECVD) from triethoxysilane (TES; C6H16O3Si) and oxygen gas as precursors. A detailed characterization, such as the chemical structure, bonding configurations and dielectric constant (k), of the SiOC(-H) films was performed. A possible mech- anism responsible for the reduction in the dielectric constant of the SiOC(-H) is described. In the SiOC(-H) film, the CH₃ group as an end group is introduced into the -O-Si-O- network, thereby reducing the density to decrease the dielectric constant. X-ray photoelectron spectroscopic (XPS) studies were carried out to study the binding energies of Si-C, O-Si-O, C-C(H), C=C, C-O and C=O bonds in the SiOC(-H) films as functions of the ow rate ratio. The dielectric constant of the SiOC(-H) film was evaluated by using the C-V measurements for a metal-insulator-semiconductor (MIS), Al/SiOC(-H)/p-Si(100), structure.
Studies of Low-Dielectric-Constant SiOC(-H) Thin Films Deposited by Using MTES/O2-PECVD
Rangaswamy Navamathavan,Chi Kyu Choi,Kwang Man Lee 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
Low-dielectric-constant SiOC(-H) films were deposited on p-type Si (100) substrates by using plasma-enhanced chemical- vapor deposition with methyltriethoxysilane and oxygen gas as precursors. SiOC(-H) films are prepared with different radio frequency (rf) powers and annealed at different temperatures in an Ar ambient for 30 min. The film thickness and the refractive index were measured by using field emission scanning electron microscopy and ellipsometry, respectively. The bonding characteristics and the relative concentrations of the bonds in the films were investigated by using Fourier transform infrared spectroscopy in the absorbance mode. The dielectric constant of the SiOC(-H) film was evaluated by using C-V measurements on the metal-insulator-semiconductor, Al/SiOC(-H)/p-Si structure, and the experimental lowest dielectric constant of the SiOC(-H) film was found to be 2.28 at an annealing temperature 500 C. These results reveal the promising characteristics of SiOC(-H) films deposited by using methyltriethoxysilane and oxygen gases.
Rangaswamy Navamathavan,Chi Kyu Choi,An Soo Jung,Hyun Seung Kim,Kwang-Man Lee,Yong Jun Jong 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
The SiOC(-H) films were deposited on \emph{p}-type Si(100) substrates by using UV-source-assisted plasma-enhanced chemical-vapor deposition from methyltrimethoxysilane (MTMS) and oxygen precursors. The bonding configuration and the chemical structures of the SiOC(-H) films were investigated by using Fourier- transform infrared spectroscopy in the absorbance mode. UV irradiation of the MTMS+Ar+O$_{2}$ bulk plasma enhanced the selective dissociation of precursor molecules, leading to good film formation. At the same time, the carbon content increased about 2 \% for the film deposited with UV irradiation compared to the film deposited without UV irradiation. The dielectric constant of the SiOC(-H) film deposited with UV irradiation decreased compared to that of the film deposited without UV. The lowest dielectric constant, about 2.13, was obtained for the SiOC(-H) film deposited with UV irradiation and annealed at 400 $^\circ$C with a MTMS/O$_{2}$ flow rate ratio of 80 \% at an rf power of 500 W.