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GENERAL PROGRAM FOR BINARY STARS RESEARCH AT MAYDANAK
ZAKIROV M. M.,HOJAEV A. S.,ARZUMANYANTS G. C. The Korean Astronomical Society 1996 Journal of The Korean Astronomical Society Vol.29 No.suppl1
The extensive close binary research program earring out at High Altitude Maydanak Observatory (Uzbekistan) by means of the UBVR photoelectric photometry on 1.0 m and 0.6 m Zeiss telescopes is described. It includes more than 240 close binary systems (CBS) in 89 different stellar aggregates. Lightcurves of CBS as well as their orbital elements derived by us are presented.
Electrical and optical properties of air-stable, iodine-doped natural cotton fibers
Zakirov, A. S.,Yuldashev, Sh. U.,Cho, H. D.,Jeon, H. C.,Kang, T. W.,Mamadalimov, A. T. 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. No.
The influence of sodium-hydroxide treatment and iodine doping on the optical and the electrical properties of cotton fibers is investigated by using photoluminescence (PL), as well as photoconductivity, measurements. The iodine doping results in a quenching of the PL and an enhancement of the photoconductivity due to the photo-induced charge transfer between the dopants and the cotton fibers. The conductivity of the iodine-doped cellulose fibers shows a significant enhancement by more than five orders of magnitude as compared to that of the undoped samples. A good correlation is found between the changes in the fiber's morphology and the electrical and optical properties of the fiber, which opens interesting perspectives for molecular donor-acceptor device applications.
Electro-Physical Properties of a Si-Based MIS Structure with a Low-bftextitk SiOC(-H) Film
Anvar Zakirov,Chi Kyu Choi,An Soo Jung,rangaswamy Navamathavan,Seung Hyun Kim,Yong Jun Jang 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
SiOC(-H) films with low dielectric constants have been prepared by using plasma enhanced chemical vapor deposition with a mixture of methyltriethoxysilane and oxygen precursors. The C-V characteristics of the structures, Al/SiOC(-H)/p-Si(100), were studied in the forward and the reverse directions by applying a polarizing potential. We found that the ratio of the maximum to the minimum capacitance (Cmax/Cmin) depended on the [MTES/(MTES+O2)] flow rate ratio. Annealed samples exhibited even greater reductions of the maximum capacitance and the dielectric constant of the SiOC(-H) samples. After annealing at 400 C, the measurement in the reverse direction revealed an interesting behavior in the form of strongly pronounced “steps.” The bonds between Si-O and the -CH3 group reduced the surface charge density, and the distribution of the surface charge density depended on [MTES/(MTES+O2)] flow rate ratio and the annealing temperature because the fixed positive (Si-CH3)+ and negative (Si-O)− changed the configuration at the SiOC(- H)/p-Si(100) interface. The SiOC(-H) film had donor (O2) and acceptor (Si-CH3 -groups) levels, and the electronic process at the SiOC(-H)/p-Si(100) interface was defined by the (Si-CH3)+ and the (Si-O)− bonds.
Anvar Zakirov,Chi Kyu Choi,An Soo Jung,Hyun Seung Kim,Rangaswamy Navamathavan,Yong Jun Jang 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
SiOC(-H) films were deposited on \emph{p}-Si (100) substrates by using plasma enhanced chemical vapor deposition with methyltrimethoxysilane (MTMS; C$_{4}$H$_{12}$O$_{3}$Si) and oxygen gas as precursors at different rf powers. In the SiOC(-H) film, the CH$_{3}$ group as an end group was introduced into the -O-Si-O- network, thereby reducing the density to decrease the dielectric constant. The flat-band voltage at the Al/SiOC(-H)/\emph{p}-Si(100) structure observed in the negative side is attributed to excess positive charge carriers in the form of -CH$_{3}$/Si-CH$_{3}$ and Si-H radicals in the film. The SiOC(-H) films deposited at different rf powers revealed the dominant mechanisms of space-charge-limited current followed by Poole-Frenkel emission. These results suggest that the electrical properties of the SiOC(-H) strongly depend on the excessive (Si-CH$_{3}$)$^{+}$ and (Si-O)$^{-}$ bonds present in the film.
A. S. Zakirov,강태원,R. Navamathavan,김창영,C. K. Choi 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.51
Low-k SiOC(-H) films with different structural orders were fabricated by using UV-assisted PECVD, and the influence of the replacement of Si-O bonds by (Si-C) bonds on the structural and the electro-physical properties was investigated. FT-IR spectrum shows that the SiOC(-H) films deposited at a RF power of 400 W have a cross-linking structure with nano-pores due to the combined Si-CH<SUB>n</SUB>-Si bond and Si-O-Si network, and there relative ratio changed with increasing RF power. From current transients, as well as the C-V characteristics, we estimated the trap and the positive charge densities in the low-<EM>k</EM> films. They were found to be on the order of 10^(16) traps/cm^3 and 10^(11) cm^(−2)eV^(−1), having a tendency to increase with increasing UV irradiation. We also found that the barrier heights for electrons at the interfaces of low-k insulators with metals were almost insensitive to the metal’s Fermi energy, suggesting that the current injection was determined by some localized state in the insulator gap. The results were substantiated and directly correlated with the changes in transport properties and with the bond structure characteristics of SiOC(-H) films.
Electrical and Optical Properties of Air-stable, Iodine-doped Natural Cotton Fibers
A. S. Zakirov,율다세프,조학동,전희창,강태원,A. T. Mamadalimov 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.4
The influence of sodium-hydroxide treatment and iodine doping on the optical and the electricalproperties of cotton fibers is investigated by using photoluminescence (PL), as well as photoconductivity,measurements. The iodine doping results in a quenching of the PL and an enhancement ofthe photoconductivity due to the photo-induced charge transfer between the dopants and the cottonfibers. The conductivity of the iodine-doped cellulose fibers shows a significant enhancement bymore than five orders of magnitude as compared to that of the undoped samples. A good correlationis found between the changes in the fiber’s morphology and the electrical and optical properties ofthe fiber, which opens interesting perspectives for molecular donor-acceptor device applications.