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소형 Gun Drill Machine 개발에 관한 연구
오진수,박광훈,남궁재관,우창기,강동명 한국공작기계학회 2006 한국공작기계학회 추계학술대회논문집 Vol.2006 No.-
This compact Gun Drilling Machine was developed to improve productivity and economical efficiency for small and midium enterprise tool makers. To produce specialize tools that gun drilling works should be required prior to making deep holes. Gun drill machines are so expensive and big burden for small tool makers so that works used to execute through outside orders but it was required lot of cost too. Most of gun drill machines are providing for high volume and large capacity enterprises. In order to support for small and medium enterprise purpose that compact gun drill machine was designed and developed. It could be improved products quality, productivity and saving manufacturing cost using this machine.
Serpentine Cavernous Aneurysm Presented with Visual Symptoms Improved by Endovascular Coil Trapping
Myeong-Jin OH,Bum-Tae Kim,Dong-Seong Shin,Rady Se 대한뇌혈관외과학회 2016 Journal of Cerebrovascular and Endovascular Neuros Vol.18 No.4
This report describes a case of a serpentine fusiform aneurysm of the internal carotid artery in a patient who presented with visual disturbances. The serpentine aneurysm was treated successfully by coil trapping and occlusion of the parent artery, accompanied by balloon dilation. Nine months post-operatively, the patient's visual acuity had improved considerably.
Jin-Woo Han,Seong-Wan Ryu,Chung-Jin Kim,Sung-Jin Choi,Sungho Kim,Jae-Hyuk Ahn,Dong-Hyun Kim,Kyu Jin Choi,Byung Jin Cho,Jin-Soo Kim,Kwang Hee Kim,Gi-Sung Lee,Jae-Sub Oh,Myeong-Ho Song,Yun Chang Park,Je IEEE 2009 IEEE transactions on electron devices Vol.56 No.4
<P>A band-offset-based unified-RAM (URAM) cell fabricated on a Si/Si<SUB>1-y</SUB>C<SUB>y</SUB> substrate is presented for the fusion of a nonvolatile memory (NVM) and a capacitorless 1T-DRAM. An oxide/nitride/oxide (O/N/O) gate dielectric and a floating-body are combined in a FinFET structure to perform URAM operation in a single transistor. The O/N/O layer is utilized as a charge trap layer for NVM, and the floating-body is used as an excess hole storage node for capacitorless 1T-DRAM. The introduction of a pseudomorphic SiC-based heteroepitaxial layer into the Si substrate provides band offset in a valence band. The FinFET fabricated on the energy-band-engineered Si<SUB>1-y</SUB>C<SUB>y</SUB> substrate allows hole accumulation in the channel for 1T-DRAM. The band-engineered URAM yields a cost-effective process that is compatible with a conventional body-tied FinFET SONOS. The fabricated URAM shows highly reliable NVM and high-speed 1T-DRAM operations in a single memory cell.</P>
( Ho Jin Lee ),( Dong Hyun Kim ),( Seul Lee ),( Myeong Seok Koh ),( So Yeon Kim ),( Ji Hyun Lee ),( Suee Lee ),( Sung Yong Oh ),( Jin Yeong Han ),( Hyo Jin Kim ),( Sung Hyun Kim ) 대한내과학회 2015 The Korean Journal of Internal Medicine Vol.30 No.6
Background/Aims: This study investigated whether patients with acute promyelocytic leukemia (APL) truly fulfill the diagnostic criteria of overt disseminated intravascular coagulation (DIC), as proposed by the International Society on Thrombosis and Haemostasis (ISTH) and the Korean Society on Thrombosis and Hemostasis (KSTH), and analyzed which component of the criteria most contributes to bleeding diathesis. Methods: A single-center retrospective analysis was conducted on newly diagnosed APL patients between January 1995 and May 2012. Results: A total of 46 newly diagnosed APL patients were analyzed. Of these, 27 patients (58.7%) showed initial bleeding. The median number of points per patient fulfilling the diagnostic criteria of overt DIC by the ISTH and the KSTH was 5 (range, 1 to 7) and 3 (range, 1 to 4), respectively. At diagnosis of APL, 22 patients (47.8%) fulfilled the overt DIC diagnostic criteria by either the ISTH or KSTH. In multivariate analysis of the ISTH or KSTH diagnostic criteria for overt DIC, the initial fibrinogen level was the only statistically significant factor associated with initial bleeding (p = 0.035), but it was not associated with overall survival (OS). Conclusions: Initial fibrinogen level is associated with initial presentation of bleeding of APL patients, but does not affect OS.
Park, Jin Joo,Cho, Young-Jin,Oh, Il-Young,Park, Hyun-Ah,Lee, Hae-Young,Kim, Kye Hun,Yoo, Byung-Su,Kang, Seok-Min,Baek, Sang Hong,Jeon, Eun-Seok,Kim, Jae-Joong,Cho, Myeong-Chan,Chae, Shung Chull,Oh, By Elsevier/North-Holland Biomedical Press 2017 International journal of cardiology Vol.248 No.-
<P><B>Abstract</B></P> <P><B>Background</B></P> <P>Hyponatremia is a well-known risk factor for worse outcomes in heart failure (HF) patients. The impact of hyponatremia according to the ejection fraction (EF) is unclear. We evaluated the prognostic value of hyponatremia according to HF type.</P> <P><B>Methods and results</B></P> <P>The Korea Acute Heart Failure (KorAHF) registry consecutively enrolled 5625 patients. Hyponatremia was defined as serum sodium level<135mmol/L at hospital admission. HF with preserved and reduced ejection fraction were defined as an LVEF ≥50% and LVEF ≤40%, respectively.</P> <P>Among 5103 patients with available EF, 2088 (60%) had HFrEF, and 1284 (25%) had HFpEF. There was no difference in serum sodium level between the groups (HFrEF: 137.4±4.7mmol/L vs. HFpEF: 137.5±5.0mmol/L, P=0.710).</P> <P>Hyponatremic patients had higher in-hospital mortality or urgent heart transplantation in all (11.3% vs. 4.5%, P<0.001), in HFrEF (13.1% vs. 4.9%, P<0.001), and in HFpEF (6.0% vs. 1.9%, P<0.001).</P> <P>After adjustment for significant covariates, hyponatremia was associated with 1.5 fold increased risk for 1-year post-discharge death in the HFrEF group (HR, 1.52; 95% CI, 1.24–1.86), but not in the HFpEF group (HR, 1.16; 95% CI, 0.84–1.61). During admission, the sodium status changed in 22% of the patients and the discharge sodium status had greater prognostic value.</P> <P><B>Conclusions</B></P> <P>Hyponatremia is independent of HF type. Hyponatremia is a significant risk factor for adverse in-hospital outcomes; however its long-term prognostic value is only limited to patients with HFrEF, but not for those with HFpEF.</P>
Han, Jin-Woo,Ryu, Seong-Wan,Kim, Chung-Jin,Kim, Sungho,Im, Maesoon,Choi, Sung Jin,Kim, Jin Soo,Kim, Kwang Hee,Lee, Gi Sung,Oh, Jae Sub,Song, Myeong Ho,Park, Yun Chang,Kim, Jeoung Woo,Choi, Yang-Kyu IEEE 2008 IEEE electron device letters Vol.29 No.7
<P> Unified random access memory (URAM) is demonstrated for the first time. The novel partially depleted (PD) SONOS FinFET provides unified function of a high-speed capacitorless 1T DRAM and a nonvolatile memory (NVM). The combination of an oxide/nitride/oxide (O/N/O) layer and a floating-body facilitates URAM operation in PD SONOS FinFETs. An NVM function is achieved by FN tunneling into the O/N/O stack and, a 1T-DRAM function is achieved by excessive-hole accumulation in the PD body. The fabricated PD SONOS FinFET shows retention time exceeding 10 years for NVM operation and program/erase time below 6 ns for 1T-DRAM in a single-cell transistor. These two memory functions are guaranteed without disturbance between them. </P>