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문기내,남철현,김귀희,위광복,박경옥,이미경,심규범,장영진 慶山大學校 保健福祉硏究所 2003 保健福祉硏究 Vol.8 No.-
This study was conducted to examine middleㆍhigh school 720 students in seven regions of middleㆍsmall city and town, Myon for 2 months from March 2 through April 30, 2002 in order to realize a side of school health education in middleㆍhigh school and health education need as well as health education specialist in school in the future. The results of this study can be summarized as follows. 1. Health condition is now 'normal' is 51.0%, 'good' is 45.0%, 'not good' is 4.1% and health condition of children is good as much as education level of mother is higher. 2. Experience to learn health education in school for one year recently is 'no' is 39.6%, 'don't know' is 32.6%, 'yes' is 27.8% and it represents health education in school doesn't work well and experience to learn health education is lower and lower in town and Myon. 3. Health education ways to work in school now are 'Movie, Video, Slide' is 40.7%, 'education as groups of nurse-teacher' is 38.6%, 'to distribute health education material and book' is 7.7%, 'education by setting an example' is 3.4%, 'the others' is 9.7%. 4. Time of appropriate health education for one time is 'about a hour' is 56.7%, 'about 30 minute' is 33.8%, 'about two hour' is 7.6%, it represents this situation is because of what students' time is lack and burden about a curriculum in an education administratin and school classed of a focused school score. 5. The average score of satisfaction of health education in school is 16.99±0.58, 'men' is 1.79±0.60, 'women' is 1.61±0.55 as the distinction of sex, satisfaction level of men is higher than women. 6. Learning route about health information is 'through mass media' is 59.9%. 'through family, friend' is 15.0% 'health education lecture' is 7.2%, 'printing media' is 6.1%, 'medical institution' is 5.6%, 'the others' is 5.1%, 'public health center' is 1.0%, 'through mass media' is the highest percent as each 59.1% and 60.6% in all of men and women. 7. The most efficient education way of health education is 'movie, video, slide' is 32.6%, 'health education specialist who works school' is 21.9%, 'school health education by nurse-teacher' is 16.0%, 'way through mass communication' is 11.6%. 8. The appropriate health education specialist in the future is 'health education specialist who has qualifications' is the highest as 64.5%, 'nurse-teacher' is 12.4%, 'medical personnel(doctor, a physician of oriental medicine etc.,)' is 11.0%, 'staff in public health center' is 7.2%, people in other regions(health and medical professor etc.,) is 7.0%, it represents school health education is not actual and is formal now in second hand. 9. The most necessary health education program is 'program of stress solution' is the highest as 24.9%, 'program of no smoking' is 22.7%, 'sexual education program' is 19.8%, 'school violence program' is 8.8%, 'isolate from their friends prevention program' is 8.0%, solution program of stress which gives student by school score was very necessary. Therefore, school health education is formal and inefficient because school education focuses on an entrance exam, so middleㆍhigh school students decrease concern and interest about health education. Furthermore, reliance is gotten down about nurse-teacher who takes charge of school health, a charged person of school health education wants more chargeable health education staff. And a solution program of stress that gives students by school score was very necessary. According to active concern and planned, systematic school health education is necessary to give right health knowledge, health maintenanceㆍpromotion and setting of appropriate health education specialist is very urgent.
이문용,박장규 한국스포츠리서치 2003 한국 스포츠 리서치 Vol.20 No.1
In order to know the characteristics of the athletes plantaries as a result of measuring the footprints of 177 players, including 25 Track and field men, 15 Basketball players, 20 Soccer players, 13 Weight lifters 19 Shooting players, 28 Wrestlers, 19 Ssirum players, 17 Judo players, and 22 Taekwondo player in the city of Jeon-ju(17-19 years), and measurement analyzing their footlength, footwidth, hallux angle, arch angle, toe angle, heed angle and heel width. I reached at the conclusion as followings 1. Ssirum, Judo, Taekwondo players are large in foot length, footwidth, heel width. 2. Basketball players are largest in hallux angle. 3. Taekwondo players are largest in arch angle, Ssirum players are largest in toe angle, Judo player are largest in geed angle. 4. In the flat degree of foot, the players of Judo, Taekwondo, Ssirum had more normal angle feet than those of Soccer, Weight-lifting did. 5. I suggest that as the shoes make an effect on the shape of footprint the continual research be necessary to produce reasonable shoes for the whole nation. 6. I think we should include the program on the foot in the training plan.
Jang, Moon-Gyu,Kim, Yark-Yeon,Jun, Myung-Sim,Lee, Seong-Jae The Institute of Electronics and Information Engin 2005 Journal of semiconductor technology and science Vol.5 No.2
Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.
Jang, Moon-Gyu,Kim, Yark-Yeon,Shin, Jae-Heon,Lee, Seong-Jae,Park, Kyoung-Wan The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.2
silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.
Schottky Barrier MOSFETs with High Current Drivability for Nano-regime Applications
Jang, Moon-Gyu,Kim, Yark-Yeon,Jun, Myung-Sim,Choi, Chel-Jong,Kim, Tae-Youb,Park, Byoung-Chul,Lee, Seong-Jae The Institute of Electronics and Information Engin 2006 Journal of semiconductor technology and science Vol.6 No.1
Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from $20{\mu}m$ to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed $550{\mu}A/um$ saturation current at $V_{GS}-V_T$ = $V_{DS}$ = 2V condition ($T_{ox}$ = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.
Chemiresistive Sensor Array Based on Semiconducting Metal Oxides for Environmental Monitoring
( Hi Gyu Moon ),( Soo Deok Han ),( Min Gyu Kang ),( Woo Suk Jung ),( Ho Won Jang ),( Kwang Soo Yoo ),( Hyung Ho Park ),( Chong Yun Kang ) 한국센서학회 2014 센서학회지 Vol.23 No.1
We present gas sensing performance based on 2Χ2 sensor array with four different elements (TiO2, SnO2, WO3 and In2O3 thin films) fabricated by rf sputter. Each thin film was deposited onto the selected SiO2/Si substrate with Pt interdigitated electrodes (IDEs) of 5m spacing which were fabricated on a SiO2/Si substrate using photolithography and dry etching. For 5 ppm NO2 and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, 2Χ2 sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.
Moon, Hi Gyu,Shim, Young-Seok,Su, Dong,Park, Hyung-Ho,Yoon, Seok-Jin,Jang, Ho Won American Chemical Society 2011 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.115 No.20
<P>Embossed TiO<SUB>2</SUB> thin films with high surface areas were achieved using soft templates composed of monolayer polystyrene beads. The structure of links between beads in the templates could be controlled by varying O<SUB>2</SUB> plasma etching time, resulting in a variety of templates with close-linked, nanolinked, or isolated beads. Room-temperature deposition of TiO<SUB>2</SUB> on the plasma-treated templates and calcination at 550 °C resulted in embossed films with tailored links between anatase TiO<SUB>2</SUB> hollow hemispheres. Although all embossed TiO<SUB>2</SUB> films displayed a similar increase in the surface-to-volume ratio compared with a plain TiO<SUB>2</SUB> thin film, the response of embossed TiO<SUB>2</SUB> films with nanolinked hollow hemispheres to CO or ethanol gases was much higher than the response of films with close-linked or isolated hollow hemispheres. The strong correlation between gas sensitivity and the structure of links between the TiO<SUB>2</SUB> hollow hemispheres revealed the critical importance of tailoring links between individual oxide nanostructures for enhancing gas-sensing properties of the ensemble of the individual nanostructures. The facile and large-scale synthesis of embossed TiO<SUB>2</SUB> films with nanolinked hollow hemispheres on Si substrates and the high sensitivity that is achieved without the aid of additives provide a sustainable competitive advantage over other methods for fabricating highly sensitive metal oxide gas sensors.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2011/jpccck.2011.115.issue-20/jp2020325/production/images/medium/jp-2011-020325_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp2020325'>ACS Electronic Supporting Info</A></P>