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A simple method of stiffness matrix formulation based on single element test
Mau, S.T. Techno-Press 1999 Structural Engineering and Mechanics, An Int'l Jou Vol.7 No.2
A previously proposed finite element formulation method is refined and modified to generate a new type of elements. The method is based on selecting a set of general solution modes for element formulation. The constant strain modes and higher order modes are selected and the formulation method is designed to ensure that the element will pass the basic single element test, which in turn ensures the passage of the basic patch test. If the element is to pass the higher order patch test also, the element stiffness matrix is in general asymmetric. The element stiffness matrix depends only on a nodal displacement matrix and a nodal force matrix. A symmetric stiffness matrix can be obtained by either modifying the nodal displacement matrix or the nodal force matrix. It is shown that both modifications lead to the same new element, which is demonstrated through numerical examples to be more robust than an assumed stress hybrid element in plane stress application. The method of formulation can also be used to arrive at the conforming displacement and hybrid stress formulations. The convergence of the latter two is explained from the point of view of the proposed method.
Mau Tuan Truong,Ersan Y Muslih,김규호 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.67 No.6
Cu2ZnSnS4 (CZTS) thin films were prepared on soda lime glass by dip coating with sulfurized Cu, Zn, Sn precursors, N2 gas jet flattening, and annealing under an Ar+H2S atmosphere, which is a simple and inexpensive process for large-area thin-film preparation, and the influence of the Cu/(Zn+Sn) ratio on the properties of the film were investigated. Copper (II) acetate monohydrate, zinc (II) acetate dihydrate, tin (II) chloride dihydrate and thiourea dissolved in an ethanol solution were used for the preparation of the sulfurized Cu, Zn and Sn precursors as a low-cost raw materials for chemical bath deposition, and dip coating of the precursors and annealing under an Ar+H2S atmosphere were applied to prepare kesterite CZTS films on substrates. Sulfurization under an Ar+H2S atmosphere enhanced CZTS formation with no zinc oxide and adhesion on the soda lime glass. As the Cu/(Zn+Sn) ratio was increased in the film,the grain size and the film density increased whereas the band gap energy and the resistivity decreased. All films exhibited a p-type semi-conductivity with a high carrier concentration.
Nguyen, Mau Tuan,Nam, Sung Hee,Park, Hyun Ro,Han, Myung Sae Korean Society of Sericultural Science 2004 International Journal of Industrial Entomology Vol.9 No.2
Six entomopathogenic fungus isolates, Beauveria bassiana J57A, Nomuraea rileyi J125A, Paecilomyces farinosus J3A, Paecilomyces fumosoroseus J50A, Metarhizium anisopliae J88, Aspergilius sp. J64A, causing muscardine disease and aspergillosis in the silkworm, Bombyx mori were investigated for their cultural and morphological characteristics (on PDA culture media within 14 days at $24^{\circ}C$). The results showed that they differ each other from the features of cultural characteristics (colony elevation, colony color, colony growth rate) or morphological characteristics (conidiogenous cell structure, phialides, conidia size and shape). Among cultural characteristics, colony color is the easiest recognizable character between isolates. The morphological characteristics of each fungal isolate correspond to the descriptions of current system of classification.
Nguyen, Mau Tuan,Lim, Jong Sung,Han, Myung Sae 한국잠사학회 1997 한국잠사곤충학회지 Vol.39 No.2
The microsporidian infection with Nosema, bombycis reconfirmed its high virulence and transovarial tranmissibility, However, the characteristic symptom of the spots like pepper grains on the diseased larval skin was no more recognized by present varieties of the silkworm. Transovarial transmission rate detected from moth was above 90% in dead eggs or dead larvae in the rearing by mulberry leaves, 80% in the newly hatched larvae starved to death. Transovarially transmitted N. bombycis was easily observed from dead eggs and larvae, and were suggested an individual inspection of a few of dead eggs for detection of the pathogenic spores. The progeny population provided indicative factors on the sampling of predictive and corrective inspection. The higher concentration of N. bombycis spores included in the hindabdormal part of infected moth, applicative on the simple method of individual moth inspection. For the predictive inspection of growned 5th-instar larvae, N. bombycix infection was detectable without microscopic observation by the unique symptom of turbid milky-white spots on the silk gland. Inspection of the meconia artificially discharged from silkworm moth, was also succesful of microscopic obsenation before crossing, without killing or homogenize the moths. The results provided a basis of rational methods for the inspection of N. bombycis infection of the silkworm.
Synthesis of Cu2ZnSnS4 thin film absorbers by sulfurizing dip-coated precursors
Tuan Truong Mau,김규호 한양대학교 세라믹연구소 2012 Journal of Ceramic Processing Research Vol.13 No.3
Cu2ZnSnS4 (CZTS) thin films, a potential candidate for the absorber layers of solar cells, were successfully deposited on soda lime glass substrates by sulfurizing dip-coated precursors. This is a simple and low-cost process. In this method, the precursor films were obtained by several cycles of dipping and air-jet cutting to rinse the film and make it flat, followed by drying at 200οC for 15 minutes. The solutions that were used in the dipping process contained copper (II) acetate monohydrate, zinc (II) acetate dehydrate, tin (II) chloride dehydrate and thiourea, dissolved in a solution of water and ethanol (30% vol). By sulfurizing the precursors in Ar + H2S (5%) gas to prevent oxidation, a CZTS single phase can be obtained with a ratio of Cu/[Zn + Sn] = 0.89, Zn/Sn = 1.03 and S/metal = 1.01. The films had a band gap of about 1.5 eV and the absorption coefficient was higher than 104 cm-1. The electrical properties of the films were shown to be p-type semiconductors with a carrier concentration of 1018 cm-3. The films can be applied as the absorber layers in solar cells.