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        Improvement of the Beam-Wave Interaction Eciency Based on the Coupling-Slot Configuration in an Extended Interaction Oscillator

        Sairong Zhu,Yong Yin,Liangjie Bi,Zhiwei Chang,Che Xu,Fanbo Zeng,Ruibin Peng,Wen Zhou,Bin Wang,Hailong Li,Lin Meng 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.73 No.9

        A method aimed at improving the beam-wave interaction eciency by changing the coupling slot configuration has been proposed in the study of extended interaction oscillators (EIOs). The disper- sion characteristics, coupling coecient and interaction impedance of the high-frequency structure based on different types of coupling slots have been investigated. Four types of coupled cavity structures with different layouts of the coupling slots have been compared to improve the beam- wave interaction eciency, so as to analyze the beam-wave interaction and practical applications. In order to determine the improvement of the coupling slot to a coupled cavity circuit in an EIO, we designed four nine-gap EIOs based on the coupled cavity structure with different coupling slot configurations. With different operating frequencies and voltages takes into consideration, beam voltages from 27 to 33 kV have been simulated to achieve the best beam-wave interaction eciency so that the EIOs are able to work in the 2 mode. The in uence of the Rb and the ds on the output power is also taken into consideration. The Rb is the radius of the electron beam, and the ds is the width of the coupling slot. The simulation results indicate that a single-slot-type EIO has the best beam-wave interaction eciency. Its maximum output power is 2.8 kW and the eciency is 18% when the operating voltage is 31 kV and electric current is 0.5 A. The output powers of these four EIOs that were designed for comparison are not less than 1.7 kW. The improved coupling-slot con- gurations enables the extended interaction oscillator to meet the different engineering requirements better.

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