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RISS 인기검색어
- 검색키워드
- 저자 : L.P. Biro (검색결과 6 건)
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Moire superlattices in strained graphene-gold hybrid nanostructures
Palinkas, A.,Sule, P.,Szendro, M.,Molnar, G.,Hwang, C.,Biro, L.P.,Osvath, Z. Pergamon Press ; Elsevier Science Ltd 2016 Carbon Vol.107 No.-
<P>Graphene-metal nanoparticle hybrid materials potentially display not only the unique properties of metal nanoparticles and those of graphene, but also additional novel properties due to the interaction between graphene and nanoparticles. This study shows that gold nanoislands can be used to tailor the local electronic properties of graphene. Graphene on crystalline gold nanoislands exhibits moire superlattices, which generate secondary Dirac points in the local density of states. Conversely, the graphene covered gold regions undergo a polycrystalline -> Au (111) phase transition upon annealing. Moreover, the nanoscale coexistence of moire superlattices with different moire periodicities has also been revealed. Several of these moire periodicities are anomalously large, which cannot be explained by the standard lattice mismatch between the graphene and the topmost Au (111) layers. Density functional theory and molecular dynamics simulations show for the first time that in such cases the graphene and the interfacial metallic layer is strained, leading to distorted lattice constants, and consequently to reduced misfit. Room temperature charge localization induced by a large wavelength moire pattern is also observed by scanning tunneling spectroscopy. These findings can open a route towards the strain engineering of graphene/metal interfaces with various moire superlattices and tailored electronic properties for nanoscale information coding. (C) 2016 Elsevier Ltd. All rights reserved.</P>
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Graphene nanopatterns with crystallographic orientation control for nanoelectronic applications
Biro, L.P.,Nemes-Incze, P.,Dobrik, G.,Hwang, C.,Tapaszto, L. Elsevier 2011 Diamond and related materials Vol.20 No.8
The possibility of parallel processing of several features was investigated experimentally for the two methods allowing the crystallographically controlled nanopatterning of graphene: scanning tunneling lithography (STL) and carbothermal etching (CTE). It was found that with multitip systems both methods are suitable for parallel processing. CTE has the advantages that only in the atomic force microscope (AFM) indentation phase is needed the multitip system and it can reveal the location of grain boundaries, so that the nanodevices can be placed in a way that they do not cross grain boundaries. STL is well suited for purposefully producing twisted graphene multilayers with precisely-know misorientations of the individual layers, as also evidenced by Moire-type patterns observed in the atomic resolution scanning tunneling microscopy (STM) images.
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Initial Stage of Graphene Growth on a Cu Substrate
Hwang, Chanyong,Yoo, K.,Kim, S. J.,Seo, E. K.,Yu, H.,Biró,, L. P. American Chemical Society 2011 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.115 No.45
<P>The growth of graphene on copper foil has attracted attention in the last two years due to its feasibility for a controllable growth process. One of the key issues remaining for practical application of graphene in solid-state devices is growth with a large grain size. Because the C–C bond in graphene is strong enough to prevent the evaporation–condensation process, Smoluchowski ripening is expected to be the dominant process for coalescence. In this article, we present the initial growth process of graphene on a Cu foil via the chemical vapor deposition method by using secondary electron microscopy and Raman microscopy. In contrast to the other transition-metal substrates, such as Ir and Rh, the center of graphene islands binds to the substrate more rigidly than the edge. For the growth with a large grain size, the graphene should be grown on a substrate with a low diffusion barrier for the carbon clusters (or islands) with low flux; this is the controlling parameter for the grain size. In addition, high-temperature growth (or annealing) generally becomes a dominant condition for the completion of graphene growth with large grains after the coalescence.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2011/jpccck.2011.115.issue-45/jp205980d/production/images/medium/jp-2011-05980d_0010.gif'></P>
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Photonic crystal type structures of biological origin: Structural and spectral characterization
K. Kertesz,Zs. Balint,Z. Vertesy,G.I. Mark,V. Lousse,J.-P. Vigneron,L.P. Biro 한국물리학회 2006 Current Applied Physics Vol.6 No.2
Photonic crystal type structures of biological origin were investigated by scanning electron microscopy (SEM) and UVVISreectance measurements. It was demonstrated that despite the moderate refractive index contrast between chitin and air, biologicalevolution developed in the wing scale nanostructures of butteries representing various families, numerous structures with dierentuse photonic structures, the UV protection mechanism of the high altitude ower Edelweiss has been investigated. We present fullysupportive data that the protection mechanism is based on coupling by nanostructured, highly selective couplers the harmful UVradiation in propagating modes along bers containing UV absorbing pigment.
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Dominantly epitaxial growth of graphene on Ni (111) substrate
Fogarassy, Z.,Rummeli, M.H.,Gorantla, S.,Bachmatiuk, A.,Dobrik, G.,Kamaras, K.,Biro, L.P.,Havancsak, K.,Labar, J.L. New York] ; North-Holland 2014 APPLIED SURFACE SCIENCE - Vol.314 No.-
Graphene was grown on a Ni (111) thin layer, used as a substrate. The Ni layer itself was grown on single crystal sapphire (0001). Carbon was deposited by chemical vapor deposition using a mixture of methane, argon and hydrogen at atmospheric pressure implementing a constant gas flow (4.8-5l/min) varying both the gas composition and the deposition temperature (900-980<SUP>o</SUP>C) and cooling rate (8-16<SUP>o</SUP>C/min) in the different experiments. Formation of uninterruptedly grown epitaxial single layer graphene was observed over the Ni (111) thin film substrate. Epitaxial growth was proven through STM measurements. Electron diffraction studies, also confirmed by STM, demonstrated that only one dominant orientation exists in the graphene, both results providing evidence of the epitaxial growth. On top of the, continuous, large area graphene flakes were also observed with sizes varying between 10nm and 10μm. Most of the top flakes are turbostratically related to the continuous underlying epitaxial graphene layer. The formation of the graphene layer with constant dominant orientation was observed over millimeter wide areas. Large areas (~20-40μm in diameter) of continuous, epitaxial graphene, free of additional deposits and flakes were obtained for the best set of growth parameters.
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Application of carbon nanotubes to silicon nitride matrix reinforcements
Cs. Bal?zsi,F. Weber,Zs. Kover,Z. Shen,Z. Konya,Zs Kasztovszky,Z. Vertesy,L.P. Biro,I. Kiricsi,P. Arato 한국물리학회 2006 Current Applied Physics Vol.6 No.2
tiwall carbon nanotube (MWNT) reinforced silicon nitride composites. Morphological, structural, compositional investigations, aswell as mechanical characterization have been performed. The rst results show that carbon nanotubes have been preserved in com-posite structure during these two high-temperature processes. Carbon nanotubes have been found to have good adherence to thesilicon nitride grains as observed for both processing methods. Moreover, carbon nanotubes may serve as crystallization sitesand seeds for silicon nitride grain growth. Signicant dierences have been found between composites prepared by these two sin-obtained by spark plasma sintering. The conventional sintering resulted in partially densied composites with coarser grainstructure
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