http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Heo, Cheon,Jang, Jongjin,Lee, Kyungjae,So, Byungchan,Lee, Kyungbae,Ko, Kwangse,Nam, Okhyun American Scientific Publishers 2017 Journal of nanoscience and nanotechnology Vol.17 No.1
<P>We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 degrees C, the 2DEG mobility and sheet carrier density were 1627 cm(2)/V . s and 3 x 23x10(13) cm(-2), respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.</P>
화장품 왕홍에 대한 중국인 소비자의 평가와 화장품 구매의도
천지아(Jia Cheon),김경자(Kyungja Kim) 가톨릭대학교 생활과학연구소 2023 생활과학연구논집 Vol.38 No.1
The purpose of this study was to examine how Chinese women consumers perceived KOL and how the perception was correlated with the quality perception and purchase intention of cosmetics that the KOL recommended. Data were collected from 315 female Chinese consumers who were in the age of 20s~30s. Online questionnaire survey was performed through Wechat company and Moonkwonsung(online survey company in China) from January to April in 2020. Results showed that the characteristics of Chinese KOL were classified into similarity, usefulness, professionalism, attractiveness, and credibility. Among the 5 KOL characteristics, professionalism score was the highest, followed by usefulness score, while similarity score was the lowest. Except for similarity, professionalism, attractiveness, usefulness, and credility influenced on the quality perception of the product KOL suggested. Finally, only credibility and attractiveness positively affected on the purchase intention of the product that KOL described.
Design and Implementation of Voice EPG Platform within Voice EPG Generator for T-DMB
Yongsik Choi,Choongsoo Lim,Kyungjae Cheon,HwanChul Kim,Jeonghoon Choi 대한전자공학회 2007 ITC-CSCC :International Technical Conference on Ci Vol.2007 No.7
EPG(Electronic Program Guide) service is a service that supports schedule of programs for audience. Most EPG service only provides visually and it causes inconvenience drivers and visually-handicapped peo ple because it makes them choose program by input devices directly. This paper is supposed to design and implement voice EPG Platfrom. It tells EPG service information and makes people choose program by voice.
Eom, Daeyong,Kim, Jinwan,Lee, Kyungjae,Jeon, Minhwan,Heo, Cheon,Pyeon, Jaedo,Nam, Okhyun American Scientific Publishers 2015 Journal of nanoscience and nanotechnology Vol.15 No.7
<P>This study investigates the crystallographic polarity transition of AIN layers grown by high temperature metalorganic chemical vapor deposition (HT-MOCVD), with varying trimethylaluminum (TMAI) pre-flow rates. AIN layers grown without TMAI pre-flow had a mixed polarity, consisting of Al- and N-polarity, and exhibited a rough surface. With an increasing rate of TMAI pre-flow, the AIN layer was changed to an Al-polarity, with a smooth surface morphology. Finally, AIN nano-pillars and nano-rods of Al-polarity were fabricated by etching a mixed polarity AIN layer using an aqueous KOH solution.</P>
GaN Growth on SiC (0001) Substrates by Metal-Organic Chemical Vapor Deposition
Lee, Kyungbae,So, Byeongchan,Lee, Kyungjae,Heo, Cheon,Ko, Kwangse,Jang, Jongjin,Nam, Okhyun American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.11
<P>In this study, the effects of the AlN buffer thickness and off-cut angles of 6H-SiC substrates on the crystallinity of GaN layers deposited via high-temperature metal organic chemical vapor deposition were investigated. The crystallinity of the GaN layers on the on-axis substrates was enhanced as the AlN buffer thickness increased. In contrast, the crystallinity of the GaN layers on the off-axis substrates was improved by applying relatively thinner AlN buffer layers. The strain relaxation of the GaN layers was closely related to the AlN buffer thickness and off-cut angles. Cathodoluminescence measurements revealed that the dark spot densities relative to defects were 1.9x10(8) and 8.9x10(7) cm(-2) for the on-and off-axis substrates, respectively. Cross-sectional transmission electron microscopy images showed that the screw and edge dislocation densities of the GaN layers deposited on off-axis substrates were reduced because of the bending of dislocations, which is due to macro-step bunching.</P>
So, Byeongchan,Lee, Kyungbae,Lee, Kyungjae,Heo, Cheon,Pyeon, Jaedo,Ko, Kwangse,Jang, Jongjin,Nam, Okhyun American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.5
<P>This study investigated GaN epitaxial layer growth with a conductive AlxGa1-xN buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the AlxGa1-xN buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the AlxGa1-xN buffer layer in our experiment. A vertical conductive structure was fabricated to measure the current voltage (I-V) characteristics as a function of Al composition, and the I-V curves showed that the resistance increased with increasing Al concentration of the AlxGa1-xN buffer layer.</P>