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Axonal Neuropathy-associated TRPV4 Regulates Neurotrophic Factor-derived Axonal Growth
Jang, Yongwoo,Jung, Jooyoung,Kim, Hyungsup,Oh, Jungeun,Jeon, Ji Hyun,Jung, Saewoon,Kim, Kyung-Tai,Cho, Hawon,Yang, Dong-Jin,Kim, Sung Min,Kim, In-Beom,Song, Mi-Ryoung,Oh, Uhtaek American Society for Biochemistry and Molecular Bi 2012 The Journal of biological chemistry Vol.287 No.8
기존 3차원 인터랙션 동작인식 기술 현황 파악을 위한 메타분석
김용우(YongWoo Kim),황민철(Min Cheol Whang),김종화(Jong Hwa Kim),우진철(Jin Cheol Woo),김치중(ChiJung Kim),김지혜(Ji Hye Kim) 대한인간공학회 2010 大韓人間工學會誌 Vol.29 No.6
Most of the research on three-dimensional interaction field have showed different accuracy in terms of sensing, mode and method. Furthermore, implementation of interaction has been a lack of consistency in application field. Therefore, this study is to suggest research trends of three-dimensional interaction using meta-analysis. Searching relative keyword in database provided with 153 domestic papers and 188 international papers covering three-dimensional interaction. Analytical coding tables determined 18 domestic papers and 28 international papers for analysis. Frequency analysis was carried out on method of action, element, number, accuracy and then verified accuracy by effect size of the meta-analysis. As the results, the effect size of sensor-based was higher than vision-based, but the effect size was extracted to small as 0.02. The effect size of vision-based using hand motion was higher than sensor-based using band motion. Therefore, implementation of three-dimensional sensor-based interaction and vision-based using hand motions more efficient. This study was significant to comprehensive analysis of three-dimensional motion recognition for interaction and suggest to application directions of three-dimensional interaction.
Three-Dimensionally Printed Micro-electromechanical Switches
Lee, Yongwoo,Han, Jungmin,Choi, Bongsik,Yoon, Jinsu,Park, Jinhee,Kim, Yeamin,Lee, Jieun,Kim, Dae Hwan,Kim, Dong Myong,Lim, Meehyun,Kang, Min-Ho,Kim, Sungho,Choi, Sung-Jin American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.18
<P>Three-dimensional (3D) printers have attracted considerable attention from both industry and academia and especially in recent years because of their ability to overcome the limitations of two-dimensional (2D) processes and to enable large-scale facile integration techniques. With 3D printing technologies, complex structures can be created using only a computer-aided design file as a reference; consequently, complex shapes can be manufactured in a single step with little dependence on manufacturer technologies. In this work, we provide a first demonstration of the facile and time-saving 3D printing of two-terminal micro-electromechanical (MEM) switches. Two widely used thermoplastic materials were used to form 3D-printed MEM switches; freely suspended and fixed electrodes were printed from conductive polylactic acid, and a water-soluble sacrificial layer for air-gap formation was printed from poly(vinyl alcohol). Our 3D-printed MEM switches exhibit excellent electromechanical properties, with abrupt switching characteristics and an excellent on/off current ratio value exceeding 10<SUP>6</SUP>. Therefore, we believe that our study makes an innovative contribution with implications for the development of a broader range of 3D printer applications (e.g., the manufacturing of various MEM devices and sensors), and the work highlights a uniquely attractive path toward the realization of 3D-printed electronics.</P> [FIG OMISSION]</BR>
Sungchul Kim,Yongwoo Jeon,Je-Hun Lee,Byung Du Ahn,Sei Yong Park,Jun-Hyun Park,Joo Han Kim,Jaewoo Park,Dong Myong Kim,Dae Hwan Kim IEEE 2010 IEEE electron device letters Vol.31 No.11
<P>The relation between the low-frequency noise (LFN) and subgap density of states (DOS) of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated by changing the postannealing temperature from 150°C to 300°C. It is found that the density of the tail states in the TFT annealed at 300°C (showing the lowest LFN) is prominently lower than those in the TFTs annealed at 250°C and 150°C. The densities of the tail states in the TFTs annealed at 250°C and 150°C (indicating similar LFN) are almost the same. In addition, it is clearly observed that the increased DOS of the a-IGZO TFT subjected to ac gate voltage stress results in a higher LFN compared with one without electrical stress. Hooge's parameters α<I>H</I>'s are extracted to be ~4.5 × 10<SUP>-3</SUP> (for the TFT annealed at 300°C) and ~1 × 10<SUP>-2</SUP> (for the TFTs annealed at 25°C and 150°C as well as for the TFT annealed at 300°C after the application of electrical ac stress). Therefore, the role of an a-IGZO subgap DOS on a LFN characteristic seems to be originated from the generation-recombination noise-induced carrier number fluctuation (via trap centers in the DOS tail states) while its correlation with the carrier mobility fluctuation is not clear except for the slope close to -1 in the logarithmic curve with the normalized power spectral density versus the gate overdrive voltage.</P>
Heesung Lee,Junyeap Kim,Jaewon Kim,Seong Kwang Kim,Yongwoo Lee,Jae-Young Kim,Jun Tae Jang,Jaewon Park,Sung-Jin Choi,Dae Hwan Kim,Dong Myong Kim IEEE 2017 IEEE electron device letters Vol.38 No.5
<P>Amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are investigated for a possible application to infrared (IR) photodetector through subgap density-ofstates over the forbidden bandgap. The origin of the sub-bandgap(hν <;E<SUB>g</SUB>) photo-response in a-IGZO TFTs is due to optically pumped electrons from the photo-responsive subgap states (E<SUB>C</SUB>-E<SUB>ph</SUB><;E<SUB>t</SUB><;E<SUB>F</SUB>). Among the sub-bandgap lights, we investigate the reproducible IR photo-response in a-IGZO TFTs as a photodetector without the persistent photoconductivity(PPC) effect. In this letter, we characterize the IR photo-response mechanism through various optical and electrical measurements on the wavelength, optical power, bias-modulated quasi-Fermi level, and photoresponsive states. This result is expected to provide independent and/or integrated IR detector with transparent substrate combined with a-IGZO TFTs.</P>
EEG 코히런스에 의한 집중한 손 동작 예측에 관한 연구
우진철(Jincheol Woo),황민철(Mincheol Whang),김종화(Jongwha Kim),김치중(Chijoong Kim),김용우(Yongwoo Kim),김지혜(Jihye Kim),김동근(Dong Keun Kim) 대한인간공학회 2010 大韓人間工學會誌 Vol.29 No.2
The study is to find relative EEG power spectrum and pattern of coherence discriminating attentive and inattentive hand movements. Eight undergraduate students aged from 20 to 27 who had not hand disability participated in this study. Participants were asked to perform visuo-motor task. EEG was measured at C3 in 10~20 international system and four areas orthogonally directed 2.5cm away from C3. Significant result discriminating movement and rest was found through coherence analysis between movement areas or movement area and non-movement area, but was individually different. Because it was anticipated that major factors caused by the differences among individuals were attributed to the attention of the subjects, relative power of alpha and beta bands was identified. As a result, significant relative powers of alpha and beta bands were found in a group of high coherence level, but were not found in a group of low level. Next, participants were divided into two groups according to relative powers of alpha and beta bands. The comparison between two groups was performed. As a result, the coherence of the alpha band in the attentive group was greater than that of the inattentive group. It was found that the coherence of the beta band in the inattentive group was happening. Therefore, individual differences of coherence were influenced by attention. The significant coherence patterns that could discriminate attentive movement and inattentive movement were found.
Kim, Yongwoo,Choi, Jae-Seok,Kim, Munchurl IEEE 2018 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS PART 2 E Vol.65 No.9
<P>Based on our previous super-interpolation method, we propose a novel hardware-friendly super-resolution (SR) algorithm, called HSI method, and its dedicated hardware architecture for up-scaling full-high-definition (FHD) video streams to 4K ultra-high-definition (UHD) video streams in real-time. Our proposed HSI method involves training and up-scaling steps. In the training step, an edge-orientation-based clustering is applied for low-resolution (LR) training patches to obtain a training patch set for each class, and a linear mapping kernel is learned from LR to high-resolution (HR) based on the training patch set for each class. In the up-scaling step, each LR input patch is transformed to an HR patch by applying the linear mapping kernel for its class. We implemented the up-scaling step of our HSI method by a dedicated hardware (HW) with the pre-trained linear mapping kernels stored in a look-up table. Our HW implementation, called HSI HW, contains 159K gate counts and achieves about 880 Mpixels/s throughput by using the TSMC 0.13-um CMOS process, and thus performing the SR operation from FHD to 4K UHD in real-time. Compared with conventional SR methods, our HW implementation of HSI reconstructs HR images of higher peak signal to noise ratio values and better visual quality.</P>