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Trilayer Tunnel Selectors for Memristor Memory Cells
Choi, Byung Joon,Zhang, Jiaming,Norris, Kate,Gibson, Gary,Kim, Kyung Min,Jackson, Warren,Zhang, Min‐,Xian Max,Li, Zhiyong,Yang, J. Joshua,Williams, R. Stanley John Wiley and Sons Inc. 2016 Advanced Materials Vol.28 No.2
<P><B>An integrated memory cell with a memristor</B> and a trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer‐deposited TaN<SUB>1+x</SUB>/Ta<SUB>2</SUB>O<SUB>5</SUB>/TaN<SUB>1+x</SUB> crested barrier selector yields a large nonlinearity (>10<SUP>4</SUP>), high endurance (>10<SUP>8</SUP>), low variability, and low temperature dependence. </P>
Crystallization and melting behavior of polypropylene in b-PP/polyamide 6 blends containing PP-g-MA
Zhidan Lin,Zixian Guan,Baofeng Xu,Chao Chen,Guangheng Guo,Jiaxian Zhou,Jiaming Xian,Lin Cao,Yueliang Wang,Mingqing Li,Wei Li 한국공업화학회 2013 Journal of Industrial and Engineering Chemistry Vol.19 No.2
In this research, we used a twin-screw extruder to melt and blend PP-g-MA compatibilizer with bpolypropylene (PP)/polyamide 6 (PA6). The influences of the PA6 and PP-g-MA contents in PP/PA6 blends on crystallization and melting behavior of PP phase and morphology were investigated. The results showed that, when PP-g-MA copolymer was added to the b form of nucleated PP/PA6 blends, the anhydride groups in PP-g-MA and PA6 terminal amine groups react to form PP-g-PA graft copolymer in a two-phase interface. This reduces the interfacial tension, improves the interfacial adhesion, and reduces the size of PA6 domains in the blend. The generated PP-g-PA graft copolymer wrapped PA6 phase and buried the anhydride groups of PP-g-MA. When the proportion of PP-g-MA and PA6 was between 0.5 and 0.75, there was no longer interfering to the formation of b-crystals in the PP phase. The content of bcrystal of PP phase in blends was found to reach as large as 85.9%.