http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
류지열,박성현,최혁환,권태하 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The ZnO(zinc oxide) thin film sensors were manufactured by RF magnetron sputtering method and added up to 4 wt. % Al_(2)O_(3), 1 wt. % TiO_(2) and 0.2 wt. % V_(2)O_(5) on the basis of ZnO material for developing the high sensitive gas sensors which have practically moderate resistivity and the stability. They were also grown on heated SiO_(2)/Si substrates of 250 ℃ at a pressure of about 10 mTorr in the pure oxygon gas with a power of about 80 watts for 10 minutes. To manufacture the thin film of the more stable high sensitivity, the thin films were also annealed from 400 ℃ to 800 ℃ and the thin films which were annealed with 700℃ for 60 minutes in the pure oxygon gas exhibited a good properties. The thin film grown in this conditions exhibited the sensitivity of maximum 550 in TMA gas concentration 160 pμm and exhibited a good stability and excellent linearity.
박성현,류지열,최혁환,권태하 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
Pt/Ti heater for TMA gas sensor was fabricated by RF magnetron sputtering method. It was grown on heated Si substrates of 250 ℃ at a pressure of about 5 mTorr in the pure argon gas with RF power of about 140 watts. Pt and Ti target alternated at intervals of even 2 minutes for 30 minutes. The heater which was grown in the ratio of 1 to 1(Pt:Ti) exhibited initial(room temperature) resistance of 45 ohms and a power dissipation of 9.6 watts up to 300℃ heater temperature. The width of resistor variance(R_(T)/R_(O)) exhibited 1.65. We can conclude that heater which was grown in the ratio of 1 to 1(Pt:Ti) is useful as a heater for TMA gas sensor
김성우,최우창,류지열,박성현,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
The DMA(Dimethylamine) gas sensors were fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigated the sensitivity and response time according to temperature variation and DMA gas concentration. The ZnO-based thin film sensors sputtered in oxygen atmosphere showed higher sensitivity than those sputtered in argon atmosphere. The ZnO-based thin film sensors doped with Al_(2)O_(3), In_(2)O_(3) and V_(2)O_(5) and sputtered in oxygen atmosphere showed the maximum sensitivity of 218(working temperature, 250 ℃, DMA gas, 160 ppm) and speedy response time. The ZnO-based thin film sensors doped with Al_(2)O_(3), In_(2)O_(3), TiO_(2) and V_(2)O_(5), sputtered in oxygen atmosphere and aged at 330 ℃ showed the maximum sensitivity of 156(working temperature, 250 ℃, DMA gas, 160 ppm).
최우창,김성우,류지열,박성현,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
The ammonia gas sensors were fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigated the sensitivity and response time according to temperature variation and ammonia gas concentration. The sensors sputtered in oxygen atmosphere showed higher sensitivity than those sputtered in argon atmosphere. The Au(0.3 wt.%) doped-ZnO thin film sensors aged at 330 ℃ showed the maximum sensitivity of 28 and good response time at a working temperature of 250 ℃ and to 160 ppm ammonia gas. The Pt(0.1 wt.%) doped-ZnO thin film sensors showed the maximum sensitivity at a low working temperature of 200 ℃.
박성현,최우창,김성우,류지열,최혁환,이명교,권태하 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
The microheaters with Si_(3)N_(4)(1500Å)/SiO_(2)(3000Å)/Si_(3)N_(4)( 1500Å) diaphragm were fabricated by thin film technology and silicon micromachining techniques. Pt and poly-Si(n+) materials were used as heater materials of microheater. Pt temperature sensor was fabricated to detect the temperature of microheaters. The thermal analysis including temperature distribution on diaphragm and power consumption of the microheater were executed by the FEM method and heat transfer equations. The power consumption of the Pt and poly-Si(n+) heaters were measured and compared to that of thermal analysis by FEM simulation.