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Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties
Lee, Jang-Sik,Cho, Jinhan,Lee, Chiyoung,Kim, Inpyo,Park, Jeongju,Kim, Yong-Mu,Shin, Hyunjung,Lee, Jaegab,Caruso, Frank Springer Science and Business Media LLC 2007 Nature nanotechnology Vol.2 No.12
<P>We describe a versatile approach for preparing flash memory devices composed of polyelectrolyte/gold nanoparticle multilayer films. Anionic gold nanoparticles were used as the charge storage elements, and poly(allylamine)/poly(styrenesulfonate) multilayers deposited onto hafnium oxide (HfO2)-coated silicon substrates formed the insulating layers. The top contact was formed by depositing HfO2 and platinum. In this study, we investigated the effect of increasing the number of polyelectrolyte and gold nanoparticle layers on memory performance, including the size of the memory window (the critical voltage difference between the 'programmed' and 'erased' states of the devices) and programming speed. We observed a maximum memory window of about 1.8 V, with a stored electron density of 4.2 x 1012 cm-2 in the gold nanoparticle layers, when the devices consist of three polyelectrolyte/gold nanoparticle layers. The reported approach offers new opportunities to prepare nanostructured polyelectrolyte/gold nanoparticle-based memory devices with tailored performance.</P>
Lee, Jang-Sik,Kim, Yong-Mu,Kwon, Jeong-Hwa,Shin, Hyunjung,Sohn, Byeong-Hyeok,Lee, Jaegab WILEY-VCH Verlag 2009 ADVANCED MATERIALS Vol.21 No.2
<B>Graphic Abstract</B> <P>Tunable memory characteristics are investigated according to the metal-nanoparticle species being used in memory devices. The memory devices are fabricated using diblock copolymer micelles as templates to synthesize nanoparticles of cobalt, gold, and a binary mixture thereof. Programmable memory characteristics show different charging/discharging behaviors according to the storage element configurations as confirmed by nanoscale device characterization. <img src='wiley_img/09359648-2009-21-2-ADMA200800340-content.gif' alt='wiley_img/09359648-2009-21-2-ADMA200800340-content'> </P>
PECVD of Blanket $TiSi_2$ on Oxide Patterned Wafers
Lee, Jaegab 한국진공학회 1992 Applied Science and Convergence Technology Vol.1 No.1
A plasma has been used in a high vaccum, cold wall reactor for low temperature deposition of C54 TiSi2 and for in-situ surface cleaning prior to silicide deposition. SiH4 and TiCl4 were used as the silicon and titanium sources, respectively. The deposited films had low resistivities in the range of 15~25 uohm-cm. The investigation of the experimental variables' effects on the growth of silicide and its concomitant silicon consumption revealed that and were the dominant species for silicide formation and the primary factors in silicon consumption were gas composition ratio and temperature. Increasing silane flow rate from 6 to 9 sccm decreased silicon consumption from 1500 A/min to less than 30 A/min. Furthermore, decreasing the temperature from 650 to $590^{\circ}C$ achieved blanket silicide deposition with no silicon consumption. A kinetic model of silicon consumption is proposed to understand the fundamental mechanism responsible for the dependence of silicon consumption on SiH4 flow rate.
텅스텐 실리사이드 산화시 발생하는 이상산화 현상 억제에 미치는 이온 주입 효과
이재갑(Jaegab Lee),노재성(Jaesung Roh),이정용(Jeongyong Lee) 한국진공학회(ASCT) 1994 Applied Science and Convergence Technology Vol.3 No.3
다결정 실리콘 위에 저압 화학 증착법으로 비정질 WSix 를 증착시킨 후에 질소 분위기, 870℃ 온도에서 2시간 동안 열처리를 실시하여 결정화를 이룩한 다음, 표면의 산화막을 희석된 불산용액으로 제거한 후 산화를 실시하면 이상산화막이 형성이 되었다. 이와 같은 이상 산화막 형성은 산화 공정전에 P 또는 As 이온 주입을 실시함으로써 억제되고 있었으며, P이온 주입 처리가 As 이 온주입보다 이상산화막 발생 억제에 보다 효율적임이 확인되었다. P이온 주입 처리가 보다 효과적인 것은 산화시 산화막내에 형성되는 P₂O_5 가 산화막의 용융점을 크게 낮추어 양칠의 산화막을 형성하는 데 기인하는 것으로 여겨진다. 마지막으로 이온 주입 처리에 의하여 비정질화된 텅스텐 실리사이드 표면의 산화 기구에 대하여 제안하였다. Oxidation of the crytalline tungsten silicide caused the growth of the abnormal oxide over WS₂. High dose ion implantation into the silicide surface prior to oxidation was revealed to be effective to suppress the formation of abnormal oxide. Compared with using arsenic, the use of phosphorous ion implantation produced thinner oxide, which was probably due to the formation of P₂O_5 in the oxide layer during the oxidation. The presence of P₂O_5 in the oxide dramatically decreased the oxide melting temperature, thereby facilitating the growth of the uniform and high quality SiO₂. Finally, the mechanism for the oxidation of the tungsten silicide surface, amorphized by using high dose ion implantation prior to oxidation, was proposed.
PECVD of Blanket TiSi₂ on Oxide Patterned Wafers
이재갑(Jaegab Lee) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1
C_(54)Ti-silicide(TiSi₂)의 증착 온도를 낮추고 챔버내에서 표면처리를 가능하게 하기 위하여 플라즈마를 고진공장치에 부착시켰다. SiH₄와 TiCl₄를 이용하여 증착시킨 Ti-silicide는 14~25 uohm-㎝의 낮은 저항을 가지고 있었다. 실험변수가 silicide의 성장속도와 이 때 발생하는 기판 실리콘의 소모(Silicon Consumption)에 미치는 영향에 대한 연구는 SiH₄가 실리사이드 형성에 참여하는 주요한 성분이며, 기판 실리콘은 silicide 형성에 참여하지 않고 소모됨을 보여주고 있었다. 또한 실리콘 소모에 주요한 영향을 미치는 인자는 가스조성과 증착온도였다. SiH₄를 6 sccm에서 9 sccm으로 증가시켰을 경우는 실리콘 소모가 1500 Å/min에서 30 Å/min 이하로 감소하였고, 온도를 650℃에서 590℃로 낮추었을 경우에는 실리콘 소모가 일어나지 않고 균일한 두께의 TiSi₂가 형성되었다. 마지막으로 기판 실리콘 소모에 SiH₄가 미치는 영향을 이해하기 위하여 실리콘 소모에 대한 반응 모델을 고려하였다. A plasma has been used in a high vaccum, cold wall reactor for low temperature deposition of C_(54) TiSi₂ and for in-situ surface cleaning prior to silicide deposition. SiH₄ and TiCl₄ were used as the silicon and titanium sources, respectively. The deposited films had low resistivities in the range of 15~25 uohm-cm. The investigation of the experimental variables' effects on the growth of silicide and its concomitant silicon consumption revealed that SiH₄ and TiCl₄ were the dominant species for silicide formation and the primary factors in silicon consumption were gas composition ratio and temperature. Increasing silane flow rate from 6 to 9 sccm decreased silicon consumption from 1500 A/min to less than 30 A/min. Furthermore, decreasing the temperature from 650 to 590℃ achieved blanket silicide deposition with no silicon consumption. A kinetic model of silicon consumption is proposed to understand. the fundamental mechanism responsible for the dependence of silicon consumption on SiH₄ flow rate.
Rapid Thermal Annealing Treatment of Electroplated Cu Films
Hanseung Lee,Dukryel Kwon,Hyunah Park,Hyoun Woo Kim,Chongmu Lee,Jaegab Lee 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.51
Cu seed layers for copper electroplating were deposited by magnetron sputtering on silicon wafers using TaN as diusion barriers between the seed layer and silicon. The Cu seed layer was cleaned with a H2 plasma prior to electroplating the copper lm, and the eects of the H2 plasma pretreatment were investigated. After thin copper lms were grown by electrodeposition on the copper seed layers which had been cleaned with the H2 plasma, they were then subjected to i) vacuum annealing, ii) rapid thermal annealing (RTA) and iii) rapid thermal nitriding (RTN) at various temperatures over dierent periods of time. X-ray diraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and resistivity measurements were done to ascertain the optimum heat treatment conditions for obtaining lms with minimum resistivity and with smooth, predominantly (111)-oriented surfaces. The as-deposited lm had a resistivity of 6.3 -cm and a relatively small intensity ratio of the (111) to the (200) peak. With heat treatment, the resistivity decreased and the (111) peak became dominant. In addition, the surface smoothness of the copper lm was improved. The optimal condition (with a resistivity of 1.98 -cm) is suggested to be rapid thermal nitriding at 400 C.
Plasmonically Engineered Textile Polymer Solar Cells for High-Performance, Wearable Photovoltaics
Cho, Seok Ho,Lee, Jaegab,Lee, Mi Jung,Kim, Hyo Jin,Lee, Sung-Min,Choi, Kyung Cheol American Chemical Society 2019 ACS APPLIED MATERIALS & INTERFACES Vol.11 No.23
<P>A practically applicable type of wearable polymer solar cells (PSCs) is presented with the enhanced performance by exploiting simply embodied, plasmonic nanostructures on a commercially available textile platform of optically opaque, geometrically uneven, and physically permeable woven fabrics that are commonly not compatible with organic photovoltaics. On a conformable fabric substrate preferentially processed with organic/inorganic multilayers for both planarization and encapsulation, the fabrication of top-illuminated, inverted type of PSCs with a transparent top electrode consisting of optimized dielectric/metal/dielectric multilayers is conducted, where a nanostructure of disorderly distributed elliptical hemispheres is implanted at an opaque bottom silver electrode by spin-coated silica nanoparticles in advance of depositing this electrode. The nanostructured bottom electrode promotes the light trapping effect at wavelengths of the surface plasmon resonance, as well as reduces the electrical Ohmic loss, thereby achieving a device with the power conversion efficiency of ∼8.71% at the given plasmonic device, where a net improvement of the efficiency is ∼1.46% compared to the planar device comprising otherwise same constituent layers. Systematic studies on optical properties and associated photovoltaic performance in experiments, together with analytic numerical modeling, allow quantitative understanding of the underlying physics, providing optimal rules for tailoring random nanostructures to the textile PSCs in the context of high-performance wearable photovoltaics.</P> [FIG OMISSION]</BR>
Enhanced Chemical Vapor Deposition of Pt Films on UV-exposed TiO2 Surfaces
Ara Kim,Heejung Park,Kwanwoo Lee,Kyunghoon Jeong,Changsoo Kim,Eungu Lee,Jaegab Lee 대한금속재료학회(구 대한금속학회) 2009 ELECTRONIC MATERIALS LETTERS Vol.5 No.1
TiO2 surfaces irradiated with UV light exhibited a water contact angle of 0°, which is indicative of highly hydrophobic surfaces. X-ray photoelectron spectroscopy revealed an increase in the concentration of hydroxyl groups on the UV-exposed surfaces. This concentration allowed for uniform nucleation and enhanced growth of Pt films. The resulting films had a low resistivity of 17.6 μΩ ·cm, which is comparable to the bulk resistivity of 10.6 μΩ cm.