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RISS 인기검색어
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- 저자 : Dukryel Kwon (검색결과 2 건)
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Dukryel Kwon,Hyunah Park,Chongmu Lee,H. T. Jeon,S Ghosh,Sudipta Roy 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.52
Cu seed layers deposited by magnetron sputtering onto tantalum nitride barrier lms were treated with an electron cyclotron resonance (ECR) plasma to enhance Cu nucleation prior to Cu electroplating. Then, the copper lms were electroplated and annealed by rapid thermal annealing (RTA) or rapid thermal nitridation (RTN) at various temperatures ranging from 200 to 500 C. The eects of annealing on the copper lms electroplated on the hydrogen ECR plasma cleaned copper seed layers were investigated using X-ray diraction (XRD), electron back-scattered diraction (EBSD), and atomic force microscopy (AFM). It appears that the copper lm undergoes complete recrystallization during annealing at a temperature higher than 400 C. The resistivity of the Cu lm tends to decrease and the degree of (111) preferred orientation tends to increase as the annealing temperature increases. The optimum annealing condition for obtaining the lm with the lowest resistivity, the smoothest surface, and the highest degree of the (111) preferred orientation is rapid thermal nitriation (RTN) at 400 C for 120 s. The resistivity and the surface roughness of the electroplated copper lm annealed under this condition are 1.98 -cm and 17.77 nm, respectively.
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Rapid Thermal Annealing Treatment of Electroplated Cu Films
Hanseung Lee,Dukryel Kwon,Hyunah Park,Hyoun Woo Kim,Chongmu Lee,Jaegab Lee 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.51
Cu seed layers for copper electroplating were deposited by magnetron sputtering on silicon wafers using TaN as diusion barriers between the seed layer and silicon. The Cu seed layer was cleaned with a H2 plasma prior to electroplating the copper lm, and the eects of the H2 plasma pretreatment were investigated. After thin copper lms were grown by electrodeposition on the copper seed layers which had been cleaned with the H2 plasma, they were then subjected to i) vacuum annealing, ii) rapid thermal annealing (RTA) and iii) rapid thermal nitriding (RTN) at various temperatures over dierent periods of time. X-ray diraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and resistivity measurements were done to ascertain the optimum heat treatment conditions for obtaining lms with minimum resistivity and with smooth, predominantly (111)-oriented surfaces. The as-deposited lm had a resistivity of 6.3 -cm and a relatively small intensity ratio of the (111) to the (200) peak. With heat treatment, the resistivity decreased and the (111) peak became dominant. In addition, the surface smoothness of the copper lm was improved. The optimal condition (with a resistivity of 1.98 -cm) is suggested to be rapid thermal nitriding at 400 C.
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