http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : J. M. Zavada (검색결과 3 건)
- 무료
- 기관 내 무료
- 유료
-
Y.W.Heo,J.Kelly,D.P.Norton,A.F.Hebard,S.J.Pearton,J.M.Zavada,Y.D.Park 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.4
High dose (3×lO^(16)cm^(-2)) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ~350℃ to avoid amorphization of the implanted region. The samples were subsequently annealed at 700℃ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ~240K.Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be in the 2+ oxidation state. The carrier density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties. No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.
-
Heo, Y.W.,Kelly, J.,Norton, D.P.,Hebard, A.F.,Pearton, S.J.,Zavada, J.M.,Park, Y.D. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.4
High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.
-
Green Luminescence and Excite State Thermalization in Er-doped Gallium Nitride
JaeTae Seo,U. H. H¨ommerich,A. J. Steckl,B. R. Birkhahn,J. M. Zavada 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
The optical properties in the 2H11/2 and 4S3/2 to 4I15/2 channels of Er-doped GaN have been investigated. The GaN:Er was grown on Si substrates by solid-source molecular beam epitaxy. The resulting Er concentration was 2 × 1020 cm−3, and the unintentional oxygen impurity was observed to be 1020 cm−3. Optical spectroscopy revealed that the lifetime decay at the 4S3/2 state was mainly due to a strong thermalization between the 2H11/2 and the 4S3/2 states. The green luminescence (4S3/2 and 2H11/2 ! 4I15/2) eciency at 300 K was much higher than 56 %. Photoluminescence and lifetime measurements with different excitation channels suggest the existence of multiple Er-sites in GaN.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
