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Green Luminescence and Excite State Thermalization in Er-doped Gallium Nitride
JaeTae Seo,U. H. H¨ommerich,A. J. Steckl,B. R. Birkhahn,J. M. Zavada 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
The optical properties in the 2H11/2 and 4S3/2 to 4I15/2 channels of Er-doped GaN have been investigated. The GaN:Er was grown on Si substrates by solid-source molecular beam epitaxy. The resulting Er concentration was 2 × 1020 cm−3, and the unintentional oxygen impurity was observed to be 1020 cm−3. Optical spectroscopy revealed that the lifetime decay at the 4S3/2 state was mainly due to a strong thermalization between the 2H11/2 and the 4S3/2 states. The green luminescence (4S3/2 and 2H11/2 ! 4I15/2) eciency at 300 K was much higher than 56 %. Photoluminescence and lifetime measurements with different excitation channels suggest the existence of multiple Er-sites in GaN.