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Van, Ngoc Huynh,Lee, Jae-Hyun,Sohn, Jung Inn,Cha, Seung Nam,Whang, Dongmok,Kim, Jong Min,Kang, Dae Joon RSC Pub 2014 Nanoscale Vol.6 No.10
<P>We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.</P>
Van, Ngoc Huynh,Lee, Jae-Hyun,Whang, Dongmok,Kang, Dae Joon Springer Berlin Heidelberg 2015 Nano-micro letters Vol.7 No.1
<P>A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame the interfacial layer problem by incorporating P(VDF-TrFE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 10<SUP>5</SUP>, a long retention time greater than 3 × 10<SUP>4</SUP> s, and a high endurance of over 10<SUP>5</SUP> programming cycles while maintaining an <I>I</I><SUB>ON</SUB>/<I>I</I><SUB>OFF</SUB> ratio higher than 10<SUP>2</SUP>.</P>
Huynh Van, Ngoc,Lee, Jae-Hyun,Whang, Dongmok,Kang, Dae Joon The Royal Society of Chemistry 2015 Nanoscale Vol.7 No.27
<▼1><▼1><P>Nanowire-based ferroelectric-complementary metal–oxide–semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells.</P></▼1><▼2><P>Nanowire-based ferroelectric-complementary metal–oxide–semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10<SUP>5</SUP> times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.</P></▼2></▼1>
Mental Health Among Healthcare Workers During the COVID-19 Pandemic in Vietnam
Nhan Phuc Thanh Nguyen,Ha Phan Ai Nguyen,Cao Khoa Dang,Minh Tri Phan,Huynh Ho Ngoc Quynh,Van Tuan Le,Chinh Van Dang,Tinh Huu Ho,Van Trong Phan,Van Trong Phan,Thang Phan,Dang Thi Anh Thu 대한예방의학회 2024 예방의학회지 Vol.57 No.1
Objectives: The objective of this study was to characterize mental health issues among Vietnamese healthcare workers (HCWs) and to identify related factors.Methods: A cross-sectional study was conducted with 990 HCWs in 2021. Their mental health status was measured using the Depression, Anxiety, and Stress Scale.Results: In total, 49.9%, 52.3%, and 29.8% of respondents were found to have depression, anxiety, and stress, respectively. The multivariable linear regression model revealed that factors associated with increased anxiety scores included depression scores (β, 0.45; 95% confidence interval [CI], 0.39 to 0.51) and stress scores (β, 0.46; 95% CI, 0.41 to 0.52). Factors associated with increased depression scores included being frontline HCWs (β, 0.57; 95% CI, 0.10 to 1.10), stress scores (β, 0.50; 95% CI, 0.45 to 0.56), and anxiety scores (β, 0.41; 95% CI, 0.36 to 0.47), while working experience was associated with reduced depression scores (β, -0.08; 95% CI, -0.16 to -0.01). Factors associated with increased stress scores included working experience (β, 0.08; 95% CI, 0.00 to 0.16), personal protective equipment interference with daily activities (β, 0.55; 95% CI, 0.07 to 1.00), depression scores (β, 0.54; 95% CI, 0.48 to 0.59), and anxiety scores (β, 0.45; 95% CI, 0.39 to 0.50), while age was associated with reduced stress scores (β, -0.12; 95% CI, -0.20 to -0.05).Conclusions: Specific interventions are necessary to enhance and promote the mental health of HCWs so they can successfully cope with the circumstances of the pandemic.
Huynh Ngoc-Diem,Jana Jayasmita,Nivetha Ravi,Van Phuc Tran,정진석,허승현 한국물리학회 2022 Current Applied Physics Vol.44 No.-
The activity of NiO/Co3O4 for the hydrogen evolution reaction (HER) during water splitting was increased by depositing these metal oxides on siloxene multi-sheets. The improvement in active sites due to siloxene was used to increase the catalytic activity. The hierarchical structure of the composite with the synergistic effect of metal oxides helped enhance the catalytic activity to show a low overpotential of 110 mV at 10 mA/cm2 in 1 M KOH and stability at 10 mA/cm2 over 20 h without an obvious change in voltage. The as-prepared catalyst can be a promising electrocatalyst for the HER owing to the low cost of transition metal oxides, the abundance of silicon on Earth, and the simplicity of the synthesis process.
Luan, Van Hoang,Tien, Huynh Ngoc,Hur, Seung Hyun Elsevier 2015 JOURNAL OF COLLOID AND INTERFACE SCIENCE - Vol.437 No.-
<P><B>Abstract</B></P> <P>Hybrid 3-dimensional (3D) structures composed of zinc oxide (ZnO) nanorods and reduced graphene oxide hydrogel (rGOH) were fabricated by chemical reaction between Zn ions and GO followed by <I>in-situ</I> lateral growth of ZnO nanorods using Zn ions as seed points. The 3D networked ZnO nanorod–rGOH (ZNR–rGOH) fabricated in this study exhibited excellent methylene blue (MB) removal efficiency due to efficient physical adsorption of dye molecules because of electrostatic attractive forces and enhanced photocatalytic activity by the laterally grown ZnO nanorods. The Langmuir–Hinshelwood rate constant of ZNR–rGOH was 4-fold higher than that of pristine rGO due to the enhanced photocatalytic effects obtained by incorporating laterally grown ZnO nanorods inside the rGOH network.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The Covalently-bonded 3D networked graphene hydrogel was fabricated using Zn ions. </LI> <LI> ZnO nanorods were laterally grown inside rGOH networks using hydrothermal synthesis. </LI> <LI> Dye removal efficiency was highly enhanced by using hybrid structures. </LI> <LI> Visible light photocatalytic activity was also observed in the hybrid structures. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>