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- 저자 : Hui-Lun Yu (검색결과 5 건)
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Family History of Cancer and Head and Neck Cancer Risk in a Chinese Population
Huang, Yu-Hui Jenny,Lee, Yuan-Chin Amy,Li, Qian,Chen, Chien-Jen,Hsu, Wan-Lun,Lou, Pen-Jen,Zhu, Cairong,Pan, Jian,Shen, Hongbing,Ma, Hongxia,Cai, Lin,He, Baochang,Wang, Yu,Zhou, Xiaoyan,Ji, Qinghai,Zho Asian Pacific Journal of Cancer Prevention 2015 Asian Pacific journal of cancer prevention Vol.16 No.17
Background: The aim of this study was to investigate whether family history of cancer is associated with head and neck cancer risk in a Chinese population. Materials and Methods: This case-control study included 921 cases and 806 controls. Recruitment was from December 2010 to January 2015 in eight centers in East Asia. Controls were matched to cases with reference to sex, 5-year age group, ethnicity, and residence area at each of the centers. Results: We observed an increased risk of head and neck cancer due to first degree family history of head and neck cancer, but after adjustment for tobacco smoking, alcohol drinking and betel quid chewing the association was no longer apparent. The adjusted OR were 1.10 (95% CI=0.80-1.50) for family history of tobacco-related cancer and 0.96 (95%CI=0.75-1.24) for family history of any cancer with adjustment for tobacco, betel quid and alcohol habits. The ORs for having a first-degree relative with HNC were higher in all tobacco/alcohol subgroups. Conclusions: We did not observe a strong association between family history of head and neck cancer and head and neck cancer risk after taking into account lifestyle factors. Our study suggests that an increased risk due to family history of head and neck cancer may be due to shared risk factors. Further studies may be needed to assess the lifestyle factors of the relatives.
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Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
Takei, Kuniharu,Fang, Hui,Kumar, S. Bala,Kapadia, Rehan,Gao, Qun,Madsen, Morten,Kim, Ha Sul,Liu, Chin-Hung,Chueh, Yu-Lun,Plis, Elena,Krishna, Sanjay,Bechtel, Hans A.,Guo, Jing,Javey, Ali American Chemical Society 2011 NANO LETTERS Vol.11 No.11
<P>Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5–50 nm. First, optical absorption studies are performed by transferring InAs “quantum membranes” (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field and thickness dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance toward establishing the fundamental device physics of two-dimensional semiconductors.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2011/nalefd.2011.11.issue-11/nl2030322/production/images/medium/nl-2011-030322_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl2030322'>ACS Electronic Supporting Info</A></P>
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Progressive failure of metal–composite hybrid wheels under impact
Shun-Fa Hwang,Hui-Lun Yu,Yu-Jen Liu,Yuder Chen,Shih-Chieh Chen,Yueh-Chih Hsieh 대한기계학회 2018 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.32 No.1
An 18-in hybrid wheel consisting of an aluminum alloy disk and a composite rim under 13° impact test is considered in this study. The rim is made of carbon fabric/polyurethane composites fabricated by resin transfer molding. Explicit finite element analysis with progressive failure function is used to investigate the failure situation of the hybrid wheel and the suitable braid angle of the braided composite. The effective elastic constants and strengths of the braided composites predicted by basic finite element analyses are adopted, whereas the true stress–strain curve of aluminum is used for the disk. Simulation results indicate that the aluminum alloy disk is safe after the impact test, whereas the rim is damaged. The volume of failed elements after impact simulation is selected as an indicator to obtain a quantity that can be used to represent the damage situation of the rim. Compared with the test results of a real hybrid wheel with [±30°] fiber angle in the rim, the hybrid wheel with fiber angle in the rim that is greater than [±30°] could pass the impact test.
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Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors
Nah, Junghyo,Kumar, S. Bala,Fang, Hui,Chen, Yu-Ze,Plis, Elena,Chueh, Yu-Lun,Krishna, Sanjay,Guo, Jing,Javey, Ali American Chemical Society 2012 The Journal of Physical Chemistry Part C Vol.116 No.17
<P>We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H<SUB>2</SUB> sensors are shown to exhibit strong thickness dependence, with ∼100× enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2012/jpccck.2012.116.issue-17/jp300446z/production/images/medium/jp-2012-00446z_0002.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp300446z'>ACS Electronic Supporting Info</A></P>
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Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
Ko, Hyunhyub,Takei, Kuniharu,Kapadia, Rehan,Chuang, Steven,Fang, Hui,Leu, Paul W.,Ganapathi, Kartik,Plis, Elena,Kim, Ha Sul,Chen, Szu-Ying,Madsen, Morten,Ford, Alexandra C.,Chueh, Yu-Lun,Krishna, Sanj Nature Publishing Group, a division of Macmillan P 2010 Nature Vol.468 No.7321
Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with high carrier mobility, to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied: such devices combine the high mobility of III??V semiconductors and the well established, low-cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored??but besides complexity, high defect densities and junction leakage currents present limitations in this approach. Motivated by this challenge, here we use an epitaxial transfer method for the integration of ultrathin layers of single-crystal InAs on Si/SiO<SUB>2</SUB> substrates. As a parallel with silicon-on-insulator (SOI) technology, we use ??XOI?? to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high-quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsO<SUB>x</SUB> layer (~1?nm thick). The fabricated field-effect transistors exhibit a peak transconductance of ~1.6?mS?쨉m<SUP>??1</SUP> at a drain??source voltage of 0.5?V, with an on/off current ratio of greater than 10,000.
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