Hypoperfusion Precedes Tau Deposition in the Entorhinal Cortex: A Retrospective Evaluation of ADNI-2 Data

Anish Kapadia,Krish Billimoria,Prarthna Desai,James T. Grist,Chris Heyn,Pejman Maralani,Sean Symons,Fulvio Zaccagna 대한신경과학회 2023 Journal of Clinical Neurology Vol.19 No.2

Background and Purpose Tau deposition in the entorhinal cortex is the earliest pathological feature of Alzheimer’s disease (AD). However, this feature has also been observed in cognitively normal (CN) individuals and those with mild cognitive impairment (MCI). The precise pathophysiology for the development of tau deposition remains unclear. We hypothesized that reduced cerebral perfusion is associated with the development of tau deposition. Methods A subset of the Alzheimer’s Disease Neuroimaging Initiative data set was utilized. Included patients had undergone arterial spin labeling perfusion MRI along with [18F]flortaucipir tau PET at baseline, within 1 year of the MRI, and a follow-up at 6 years. The association between baseline cerebral blood flow (CBF) and the baseline and 6-year tau PET was assessed. Univariate and multivariate linear modeling was performed, with p<0.05 indicating significance. Results Significant differences were found in the CBF between patients with AD and MCI, and CN individuals in the left entorhinal cortex (p=0.013), but not in the right entorhinal cortex (p=0.076). The difference in maximum standardized uptake value ratio between 6 years and baseline was significantly and inversely associated with the baseline mean CBF (p=0.042, R2=0.54) in the left entorhinal cortex but not the right entorhinal cortex. Linear modeling demonstrated that CBF predicted 6-year tau deposition (p=0.015, R2=0.11). Conclusions The results of this study suggest that a reduction in CBF at the entorhinal cortex precedes tau deposition. Further work is needed to understand the mechanism underlying tau deposition in aging and disease.

청구의 해석과 확립된 판례법

( Jyotsna Kapadia ) 한국지식재산연구원 2009 지식재산연구 Vol.4 No.4

본문은 특허 청구항의 해석과 관련된 확립된 판례법을 설명한다. 일반적으로 청구는 도입부와 청구항 본문, 연결부의 세 부분으로 구성된다. 청구항의 각 부분에 선택된 단어는 청구에 대한 해석의 의미를 가지고 있다. 도입부는 청구의 범위를 제한할 수 있다. 특허의 청구는 모순이나 혼란을 유발해서는 안된다. 청구는 분명하고 간결해야 한다. 청구항 작성 시 기술적 정보를 제공하지 않는 상표의 이용은 피해야 한다. 또한 상표를 포함한 개시는 권한을 부여하는 캐시로 볼 수 없으며 상표의 의미가 특허 기간 동안 계속 유지된다는 보장을 할 수 없다. 청구항은 독립항, 종속항, 다중종속항의 형태로 작성될 수 있다. 종속항이나 다중종속항은 기초 청구항의 한계를 지정한다. 단 다중종속항은 다른 다중종속항의 근거 역할을 할 수 없다. 옴니버스 청구항은 발명의 성격 상 43(6) EPC에 따라 설명을 참조하지 않고 표시가 불가능한 경우를 제외하고는 허용되지 않는다. 연방순회항소법원의 판결에 따르면 청구항 구분의 원칙에 따라 각 청구항이 서로 다른 범위를 가진 것으로 간주한다. 방법적 물건청구항은 제품의 구성이나 다른 성격이 완전히 알려지지 않아 제조 방법을 참조하지 않고서는 제품의 설명이 불가능한 경우에 허용된다. 제품이 파라미터에 의해 정의된 경우에는 피근미터 측정이 잘 알려져 있지 않은 한 파라미터의 측정 방식을 제공해야 한다. 포괄적인 대체 표현은 청구의 범위나 명료성에 관련하여 불확실성이나 모호성이 없는 경우 마쿠시형 청구항으로 허용된다. 기술적 관계가 없는 두 가지 방법은 단일 다단계 방법 청구항을 구성할 수 없는 것으로 판결되었다. 청구항에 이용된 용어는 명세서에서 특별히 정의되지 않는 한 해당 기술분야에서 관습적으로 이용되는 의미를 가진 것으로 해석된다. 청구의 해석을 위해 각각의 증거 출처에 얼마나 높은 가중치를 둘 것인가는 사안마다 다르다. This article covers some established Case-Laws in respect of patent claim interpretation. Generally a claim is drafted as a single sentence with three parts, a preamble, main body of the claim and a link connecting both. Wordings chosen for each part of claim has implications on interpretation thereof. Preamble may restrict the scope of claim. Claim(s) of a patent must not be self-contradictory or creating confusion. Claim must be clear and concise. Use of a trademark should be avoided in drafting claim as it does not provide information in technical terms. Moreover, a disclosure involving trademark cannot be said to be enabling disclosure. Further, there is no guarantee that the meaning of a trademark will remain same throughout the patent term. A claim may be in an independent, dependent or multiple-dependent form. Dependent or multiple-dependent claims specify limitations of base claim. However, a multiple dependent claim cannot serve as a base for another multiple-dependent claim. Omnibus claims are not allowable as per Rule 43(6) EPC, unless in case if the nature of an invention is such that the claim cannot be expressed without reference to description. As per the opinion of Federal Circuit, under the doctrine of claim differentiation, each claim in a patent is presumptively different in scope. Product-by-process claims are allowed where structure or other characteristics of a product are not completely known and hence the description of product is not possible without referring to the process by which it is made. When a product is defined by its parameters, it is necessary to give method of measurement of those parameters, unless the method of such measurement is well known in the art Alternative generic expressions are permitted in Markush type claims if they present no uncertainty or ambiguity with respect to the scope or clarity of the claims. It was held in a case that two methods without any technical bearing on each other cannot be considered as a technical whole and hence it cannot be allowed in form of a single multi-step process claim. The terms used in claims should be generally interpreted to give a meaning conventionally used in the relevant art, unless any special meaning is defined in the specification. For interpretation of claims, how much weight should be given to each available source of evidence differs from case to case.

Ordered Arrays of Dual-Diameter Nanopillars for Maximized Optical Absorption

Fan, Zhiyong,Kapadia, Rehan,Leu, Paul W.,Zhang, Xiaobo,Chueh, Yu-Lun,Takei, Kuniharu,Yu, Kyoungsik,Jamshidi, Arash,Rathore, Asghar A.,Ruebusch, Daniel J.,Wu, Ming,Javey, Ali American Chemical Society 2010 Nano letters Vol.10 No.10

<P>Optical properties of highly ordered Ge nanopillar arrays are tuned through shape and geometry control to achieve the optimal absorption efficiency. Increasing the Ge materials filling ratio is shown to increase the reflectance while simultaneously decreasing the transmittance, with the absorbance showing a strong diameter dependency. To enhance the broad band optical absorption efficiency, a novel dual-diameter nanopillar structure is presented, with a small diameter tip for minimal reflectance and a large diameter base for maximal effective absorption coefficient. The enabled single-crystalline absorber material with a thickness of only 2 μm exhibits an impressive absorbance of ∼99% over wavelengths, λ = 300−900 nm. These results enable a viable and convenient route toward shape-controlled nanopillar-based high-performance photonic devices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-10/nl1010788/production/images/medium/nl-2010-010788_0005.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl1010788'>ACS Electronic Supporting Info</A></P>

Nanoscale Semiconductor “X” on Substrate “Y” – Processes, Devices, and Applications

Madsen, Morten,Takei, Kuniharu,Kapadia, Rehan,Fang, Hui,Ko, Hyunhyub,Takahashi, Toshitake,Ford, Alexandra C.,Lee, Min Hyung,Javey, Ali WILEY‐VCH Verlag 2011 ADVANCED MATERIALS Vol.23 No.28

<P><B>Abstract</B></P><P>Recent advancements in the integration of nanoscale, single‐crystalline semiconductor ‘X’ on substrate ‘Y’ (XoY) for use in transistor and sensor applications are presented. XoY is a generic materials framework for enabling the fabrication of various novel devices, without the constraints of the original growth substrates. Two specific XoY process schemes, along with their associated materials, device and applications are presented. In one example, the layer transfer of ultrathin III–V semiconductors with thicknesses of just a few nanometers on Si substrates is explored for use as energy‐efficient electronics, with the fabricated devices exhibiting excellent electrical properties. In the second example, contact printing of nanowire‐arrays on thin, bendable substrates for use as artificial electronic‐skin is presented. Here, the devices are capable of conformably covering any surface, and providing a real‐time, two‐dimensional mapping of external stimuli for the realization of smart functional surfaces. This work is an example of the emerging field of “<I>translational nanotechnology</I>” as it bridges basic science of nanomaterials with practical applications.</P>

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Ko, Hyunhyub,Takei, Kuniharu,Kapadia, Rehan,Chuang, Steven,Fang, Hui,Leu, Paul W.,Ganapathi, Kartik,Plis, Elena,Kim, Ha Sul,Chen, Szu-Ying,Madsen, Morten,Ford, Alexandra C.,Chueh, Yu-Lun,Krishna, Sanj Nature Publishing Group, a division of Macmillan P 2010 Nature Vol.468 No.7321

Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with high carrier mobility, to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied: such devices combine the high mobility of III??V semiconductors and the well established, low-cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored??but besides complexity, high defect densities and junction leakage currents present limitations in this approach. Motivated by this challenge, here we use an epitaxial transfer method for the integration of ultrathin layers of single-crystal InAs on Si/SiO<SUB>2</SUB> substrates. As a parallel with silicon-on-insulator (SOI) technology, we use ??XOI?? to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high-quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsO<SUB>x</SUB> layer (~1?nm thick). The fabricated field-effect transistors exhibit a peak transconductance of ~1.6?mS?쨉m<SUP>??1</SUP> at a drain??source voltage of 0.5?V, with an on/off current ratio of greater than 10,000.

Impact and perceived value of the revolutionary advent of artificial intelligence in research and publishing among researchers: a survey-based descriptive study

Riya Thomas,Uttkarsha Bhosale,Kriti Shukla,Anupama Kapadia 한국과학학술지편집인협의회 2023 Science Editing Vol.10 No.1

Purpose: This study was conducted to understand the perceptions and awareness of artificial intelligence (AI) in the academic publishing landscape. Methods: We conducted a global survey entitled “Role and impact of AI on the future of academic publishing” to understand the impact of the AI wave in the scholarly publishing domain. This English-language survey was open to all researchers, authors, editors, publishers, and other stakeholders in the scholarly community. Conducted between August and October 2021, the survey received responses from around 212 universities across 54 countries. Results: Out of 365 respondents, about 93% belonged to the age groups of 18–34 and 35–54 years. While 50% of the respondents selected plagiarism detection as the most widely known AI-based application, image recognition (42%), data analytics (40%), and language enhancement (39%) were some other known applications of AI. The respondents also expressed the opinion that the academic publishing landscape will significantly benefit from AI. However, the major challenges restraining the large-scale adoption of AI, as expressed by 93% of the respondents, were limited knowledge and expertise, as well as difficulties in integrating AI-based solutions into existing IT infrastructure. Conclusion: The survey responses reflected the necessity of AI in research and publishing. This study suggests possible ways to support a smooth transition. This can be best achieved by educating and creating awareness to ease possible fears and hesitation, and to actualize the promising benefits of AI.

p‐Type InP Nanopillar Photocathodes for Efficient Solar‐Driven Hydrogen Production

Lee, Min Hyung,Takei, Kuniharu,Zhang, Junjun,Kapadia, Rehan,Zheng, Maxwell,Chen, Yu‐,Ze,Nah, Junghyo,Matthews, Tyler S.,Chueh, Yu‐,Lun,Ager, Joel W.,Javey, Ali WILEY‐VCH Verlag 2012 Angewandte Chemie Vol.124 No.43

<P><B>Perfekte Textur</B>: Der Einfluss der Oberflächen‐Nanotexturierung, der TiO<SUB>2</SUB>‐Passivierung und des Ru‐Cokatalysators auf die photoelektrochemische Wasserstoffentwicklung durch p‐InP‐Photokathoden wurde untersucht. Höhere Stromdichten und günstigere Onset‐Potentiale werden nach Oberflächen‐Nanotexturierung beobachtet. NHE=Normalwasserstoffelektrode.</P>

PEEK/SiO2 Composites with High Thermal Stability for Electronic Applications

RK Goyal,K.A. Rokade,A.S. Kapadia,B. S. Selukar,B. Garnaik 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.1

Thermal and mechanical properties of new high performance polymer matrix composites based on poly(etheretherketone)(PEEK) as matrix and crystalline-silica (SiO2) as reinforcement were discussed for application in electronic packaging substrates or printed circuit boards. The content of SiO2 was varied between 0 and 50 wt. %. Scanning electron microscopy showed uniform dispersion of SiO2 particles in the matrix. Thermogravimetry analysis showed significant increase in thermal stability and char yield with increase in SiO2content in the matrix. Differential scanning calorimetry showed that SiO2 had a heterogeneous nucleating effect on PEEK, leading to an increase in peak temperature of crystallization and onset crystallization temperature of the composites compared to a pure matrix. The microhardness increased approximately 42%. A modified rule of mixtures with a strengthening efficiency factor equal to 0.06 fit the data nicely. The results show that the prepared PEEK/SiO2 composites may have potential applications in electronics.

Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes

Takei, Kuniharu,Fang, Hui,Kumar, S. Bala,Kapadia, Rehan,Gao, Qun,Madsen, Morten,Kim, Ha Sul,Liu, Chin-Hung,Chueh, Yu-Lun,Plis, Elena,Krishna, Sanjay,Bechtel, Hans A.,Guo, Jing,Javey, Ali American Chemical Society 2011 NANO LETTERS Vol.11 No.11

<P>Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5–50 nm. First, optical absorption studies are performed by transferring InAs “quantum membranes” (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field and thickness dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance toward establishing the fundamental device physics of two-dimensional semiconductors.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2011/nalefd.2011.11.issue-11/nl2030322/production/images/medium/nl-2011-030322_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl2030322'>ACS Electronic Supporting Info</A></P>

High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition

Zheng, Maxwell,Yu, Zhibin,Joon Seok, Tae,Chen, Yu-Ze,Kapadia, Rehan,Takei, Kuniharu,Aloni, Shaul,Ager, Joel W.,Wu, Ming,Chueh, Yu-Lun,Javey, Ali American Institute of Physics 2012 JOURNAL OF APPLIED PHYSICS - Vol.111 No.12