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Enrichment Measurement of Nuclear Materials by Passive Gamma-ray Analysis
Hong, Jong-Sook,Cha, Hong-Ryul,Park, Hyoung-Nae,Lee, Byung-Doo,Park, Ho-Joon Korean Nuclear Society 1991 Nuclear Engineering and Technology Vol.23 No.2
U-235 enrichment has been measured non-destructively by passive gamma-ray pulse height analysis. Measurement source is 185.7 keV gamma-ray which is emitted from uranium sample during alpha decay of U-235 in it. Factors influencing the measurement such as sample composition, attenuation effect of container wall, collimation effect and counting efficiency were evaluated. Under the optimized counting system, the measured relative errors were~8%, ~8% and~1% from Tag values at 95% confidence level for depleted UF$_{6}$ cylinders, depleted UO$_2$powder, and natural UO$_2$powder respectively.
Yang-Kil Kim,Mi-Ja Lee,Jong-Nae Hyun,Seong-Bum Baek,Jong-Chul Park,Jai-Hyun Jeung,Hong-Jib Choi,Su-Hyun Cho,Mi-Jung Kim,Hyoung-Ho Park,Jae-Seong Choi,Tae-Su Kim,Kee-Jong, kim,Ki-Hun Park 한국육종학회 2012 한국육종학회 심포지엄 Vol.2012 No.07
Improvement of winter hardiness, diseases resistance and good quality have been recently received more attention by covered barley(Hordeum vulgare L.) breeders than ever in Korea. “Hyegang”, a new covered barley cultivar with similar maturing and high yield was developed by the National Institute of Crop Science, RDA in 2011. It was derived from the cross between “Milyang87/NWX-GB-G 2” and “Milyang87/Chalbori” with good quality. The initial cross was done in 2000 and the selected line, “Iksan445” (YB4625-B-B-6-2), showed high yield and good quality characteristics under yield trial test in 2008. It was cultivated three times for three years (2009~2011) in the four locations of regional yield trial (RYT) in korea and was investigated about agronomic and quality characteristics and released as “Hyegang”. The heading date was May 4 in upland and April 26 in paddy field which was 1 and 0 day lateness respectively than that of check cultivar, “Olbori”. The culm length was 77 cm which was 6 cm shorter than that with check cultivar. It showed the spike length of 4.7 cm, 800 spikes / m2, 64 grains / spike and 25.1g for 1,000 grains weight. It showed similar maturing and stronger resistance to barley yellow mosaic virus (BaYMV) compare to check cultivar. It showed higher diastatic power 216DP than that of check cultivar, ‘Olbori’. Average yield of “Hyegang” in the RYT was 4.61 MT/ha in upland and 4.38 MT/ha in paddy field, espectively.
Park, Yong Seob,Noh, Haw Young,Lee, Nae-Eung,Hong, Byungyou American Scientific Publishers 2009 Journal of nanoscience and nanotechnology Vol.9 No.6
<P>Nanocrystalline amorphous carbon (nc a-C) films recently prepared in our laboratory exhibited very low resistivity (< 1 momega x cm) and good conductivity without any dopant. They also showed properties such as good adhesion to glass and plastic substrates, smooth surface, low friction coefficient, thermal stability, and high transparency. We applied nc a-C films to the bottom-gated electrodes of organic thin film transistors (OTFTs). In this work, we describe the characterization of conductive nc a-C films synthesized by closed-field unbalanced magnetron (CFUBM) sputtering and fabricate OTFTs of a bottom gate structure using pentacene as the active layer and polyvinylphenol (PVP) as the gate dielectric on the nc a-C gate electrode. We investigated the surface and electrical properties of each layer using an AFM method and estimated the device properties of OTFTs including I(D)-V(D), I(D)-V(G), threshold voltage V(T), on/off ratio, and field effect mobility.</P>
Index-matched indium tin oxide electrodes for capacitive touch screen panel applications.
Hong, Chan-Hwa,Shin, Jae-Heon,Ju, Byeong-Kwon,Kim, Kyung-Hyun,Park, Nae-Man,Kim, Bo-Sul,Cheong, Woo-Seok American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.11
<P>Index-matched indium tin oxide (ITO) electrodes for capacitive touch screen panels have been fabricated to improve optical transmittance and reduce the difference of reflectance (deltaR) between the etched and un-etched regions. 8.5 nm Nb2O5 and 49 nm SiO2 thin films were deposited by magnetron sputtering as index-matching layers between an ITO electrode and a glass substrate. In case of 30 nm ITO electrode, a 4.3% improvement in the optical transmittance and a deltaR of less than 1% were achieved, along with a low sheet resistance of 90 omega/square.</P>